M. S. Minsky

1.8k citations

18 papers · 1.5k indexed · h-index 16

Condensed Matter Physics top 1%
Atomic and Molecular Physics, and Optics top 5%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry top 10%
Electrical and Electronic Engineering top 10%

Co-authors: Evelyn L. Hu Steven P. DenBaars S. Keller John E. Bowers Mark White Umesh K. Mishra Shigefusa F. Chichibu S. B. Fleischer
Topics: GaN-based semiconductor devices and materials (17 papers)Ga2O3 and related materials (12 papers)Semiconductor Quantum Structures and Devices (9 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Japanese Journal of Applied Physics
Partner nations: United States Japan Taiwan

In The Last Decade

M. S. Minsky

18 papers receiving 1.4k citations

Peers

Countries citing papers authored by M. S. Minsky

Since Specialization

Citations

This map shows the geographic impact of M. S. Minsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. S. Minsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. S. Minsky more than expected).

Fields of papers citing papers by M. S. Minsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. S. Minsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. S. Minsky. The network helps show where M. S. Minsky may publish in the future.

Co-authorship network of co-authors of M. S. Minsky

This figure shows the co-authorship network connecting the top 25 collaborators of M. S. Minsky. A scholar is included among the top collaborators of M. S. Minsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. S. Minsky. M. S. Minsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

#	Work	Indexed citations
1	Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells 2002 ·Journal of Applied Physics ·M. S. Minsky,Satoshi Watanabe,Norihide Yamada	38
2	Photoluminescence Excitation Spectroscopy of InxGa1-xN/GaN Multiple Quantum Wells with Various In Compositions 2001 ·physica status solidi (b) ·(unknown),(unknown),Yoichi Yamada,Tsunemasa Taguchi,Satoshi Watanabe,M. S. Minsky,Tetsuya Takeuchi,N. Yamada	2
3	Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies 1999 ·IEEE Journal of Quantum Electronics ·Hongtao Jiang,M. S. Minsky,S. Keller,Evelyn L. Hu,J. Singh,Steven P. DenBaars	14
4	Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth 1999 ·Applied Physics Letters ·Shigefusa F. Chichibu,H. Marchand,M. S. Minsky,S. Keller,P. Fini,J. P. Ibbetson,S. B. Fleischer,James S. Speck,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,Steven P. DenBaars,Takahiro Deguchi,T. Sota,Shuji Nakamura	147
5	Optical properties of InGaN quantum wells 1999 ·Materials Science and Engineering B ·Shigefusa F. Chichibu,A. Abare,M. Mack,M. S. Minsky,Takahiro Deguchi,Daniel A. Cohen,P. Kozodoy,S. B. Fleischer,S. Keller,James S. Speck,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,L.A. Coldren,Steven P. DenBaars,Kazumi Wada,T. Sota,Shuji Nakamura	155
6	MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells 1998 ·Materials science forum ·S. Keller,(unknown),M. S. Minsky,Xing Wu,M. Mack,James S. Speck,Evelyn L. Hu,L. A. Coldren,Umesh K. Mishra,Steven P. DenBaars	17
7	Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells 1998 ·Journal of Crystal Growth ·S. Keller,Shigefusa F. Chichibu,M. S. Minsky,Evelyn L. Hu,Umesh K. Mishra,Steven P. DenBaars	61
8	Growth and properties of InGaN nanoscale islands on GaN 1998 ·Journal of Crystal Growth ·S. Keller,B.P. Keller,M. S. Minsky,John E. Bowers,Umesh K. Mishra,Steven P. DenBaars,W. Seifert	25
9	Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures 1998 ·Applied Physics Letters ·Shigefusa F. Chichibu,A. Abare,M. S. Minsky,S. Keller,S. B. Fleischer,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,L.A. Coldren,Steven P. DenBaars,T. Sota	387
10	Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes 1998 ·Applied Physics Letters ·Shigefusa F. Chichibu,(unknown),M. Mack,A. Abare,P. Kozodoy,M. S. Minsky,S. B. Fleischer,S. Keller,John E. Bowers,Umesh K. Mishra,L. A. Coldren,David R. Clarke,Steven P. DenBaars	54
11	Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells 1998 ·Applied Physics Letters ·Yong‐Hoon Cho,J. J. Song,S. Keller,M. S. Minsky,Evelyn L. Hu,U. K. Mishra,Steven P. DenBaars	78
12	Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers 1998 ·Japanese Journal of Applied Physics ·M. S. Minsky,Shigefusa F. Chichibu,S. B. Fleischer,A. Abare,John E. Bowers,Evelyn L. Hu,S. Keller,Umesh K. Mishra,Steven P. DenBaars	28
13	Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence 1998 ·Applied Physics Letters ·M. S. Minsky,S. B. Fleischer,A. Abare,John E. Bowers,Evelyn L. Hu,S. Keller,Steven P. DenBaars	74
14	Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques 1997 ·IEEE Journal of Selected Topics in Quantum Electronics ·Chi‐Kuang Sun,S. Keller,Tien‐Lung Chiu,G. Wang,M. S. Minsky,John E. Bowers,Steven P. DenBaars	21
15	Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature 1997 ·Applied Physics Letters ·Chi‐Kuang Sun,(unknown),S. Keller,G. Wang,M. S. Minsky,Steven P. DenBaars,John E. Bowers	42
16	Room-temperature photoenhanced wet etching of GaN 1996 ·Applied Physics Letters ·M. S. Minsky,Mark White,Evelyn L. Hu	230
17	Radiative recombination lifetime measurements of InGaN single quantum well 1996 ·Applied Physics Letters ·Chi‐Kuang Sun,S. Keller,(unknown),M. S. Minsky,John E. Bowers,Steven P. DenBaars	65
18	Photoluminescence excitation spectroscopy yields band gap of Ga0.5In0.5P containing relatively ordered domains 1993 ·Applied Physics Letters ·J.E. Fouquet,M. S. Minsky,S. J. Rosner	22

About M. S. Minsky

M. S. Minsky is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 18 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Ga2O3 and related materials (12 papers) and Semiconductor Quantum Structures and Devices (9 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (619 citations) and Atomic and Molecular Physics, and Optics (705 citations). M. S. Minsky has collaborated with scholars based in United States, Japan and Taiwan. Frequent co-authors include Evelyn L. Hu, Steven P. DenBaars, S. Keller, John E. Bowers, Mark White, Umesh K. Mishra, Shigefusa F. Chichibu, S. B. Fleischer, A. Abare and T. Sota. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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