Elison Matioli

6.2k total citations · 3 hit papers
144 papers, 4.9k citations indexed

About

Elison Matioli is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Elison Matioli has authored 144 papers receiving a total of 4.9k indexed citations (citations by other indexed papers that have themselves been cited), including 107 papers in Electrical and Electronic Engineering, 105 papers in Condensed Matter Physics and 42 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Elison Matioli's work include GaN-based semiconductor devices and materials (105 papers), Silicon Carbide Semiconductor Technologies (53 papers) and Semiconductor materials and devices (53 papers). Elison Matioli is often cited by papers focused on GaN-based semiconductor devices and materials (105 papers), Silicon Carbide Semiconductor Technologies (53 papers) and Semiconductor materials and devices (53 papers). Elison Matioli collaborates with scholars based in Switzerland, United States and France. Elison Matioli's co-authors include Luca Nela, Jun Ma, Georgios Kampitsis, Remco van Erp, Reza Soleimanzadeh, Claude Weisbuch, Riyaz Abdul Khadar, Mohammad Samizadeh Nikoo, James S. Speck and Tomás Palacios and has published in prestigious journals such as Nature, Nano Letters and ACS Nano.

In The Last Decade

Elison Matioli

137 papers receiving 4.8k citations

Hit Papers

Co-designing electronics with microf... 2012 2026 2016 2021 2020 2021 2012 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Elison Matioli Switzerland 36 2.9k 2.8k 1.3k 1.1k 1.1k 144 4.9k
T. Paul Chow United States 39 5.4k 1.8× 1.7k 0.6× 1.1k 0.9× 877 0.8× 1.2k 1.1× 357 6.0k
Karl D. Hobart United States 38 3.3k 1.1× 1.9k 0.7× 1.7k 1.3× 2.3k 2.0× 816 0.8× 306 5.2k
T. Jimbo Japan 43 2.8k 0.9× 2.0k 0.7× 1.2k 0.9× 2.8k 2.4× 1.3k 1.2× 289 5.6k
Tongbo Wei China 33 1.3k 0.4× 2.1k 0.7× 1.4k 1.1× 2.0k 1.8× 845 0.8× 214 3.8k
Jae‐Hyun Ryou United States 38 2.7k 0.9× 2.9k 1.0× 1.7k 1.3× 1.9k 1.7× 1.7k 1.6× 257 5.4k
Philippe Godignon Spain 28 5.2k 1.8× 840 0.3× 1.3k 1.0× 1.4k 1.2× 1.6k 1.5× 344 7.1k
Yi Luo China 34 2.5k 0.8× 1.5k 0.5× 693 0.5× 1.0k 0.9× 1.9k 1.7× 321 4.4k
David W. Greve United States 34 2.6k 0.9× 1.9k 0.7× 1.0k 0.8× 1.6k 1.4× 944 0.9× 208 4.8k
Yuhao Zhang United States 45 4.4k 1.5× 3.4k 1.2× 3.0k 2.2× 2.3k 2.0× 657 0.6× 218 6.8k
А. М. Гришин Sweden 33 2.1k 0.7× 517 0.2× 1.3k 1.0× 1.9k 1.7× 1.3k 1.3× 260 4.0k

Countries citing papers authored by Elison Matioli

Since Specialization
Citations

This map shows the geographic impact of Elison Matioli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Elison Matioli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Elison Matioli more than expected).

Fields of papers citing papers by Elison Matioli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Elison Matioli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Elison Matioli. The network helps show where Elison Matioli may publish in the future.

Co-authorship network of co-authors of Elison Matioli

This figure shows the co-authorship network connecting the top 25 collaborators of Elison Matioli. A scholar is included among the top collaborators of Elison Matioli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Elison Matioli. Elison Matioli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Luterbacher, Jeremy S., et al.. (2025). Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization. Advanced Science. 12(35). e07687–e07687. 2 indexed citations
2.
Zheng, Hao, et al.. (2024). Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron. IEEE Electron Device Letters. 45(7). 1121–1124.
3.
Nela, Luca, et al.. (2022). Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate. IEEE Electron Device Letters. 43(9). 1523–1526. 11 indexed citations
4.
Nela, Luca, et al.. (2022). Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures. IEEE Transactions on Electron Devices. 69(4). 1798–1804. 10 indexed citations
5.
Matioli, Elison, et al.. (2022). GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films. Japanese Journal of Applied Physics. 61(11). 118003–118003. 4 indexed citations
6.
Nela, Luca, et al.. (2021). Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs. IEEE Journal of the Electron Devices Society. 9. 1066–1075. 11 indexed citations
7.
Nikoo, Mohammad Samizadeh, Armin Jafari, Nirmana Perera, & Elison Matioli. (2020). Efficient High Step-Up Operation in Boost Converters Based on Impulse Rectification. IEEE Transactions on Power Electronics. 35(11). 11287–11293. 8 indexed citations
8.
Nikoo, Mohammad Samizadeh, Armin Jafari, Nirmana Perera, & Elison Matioli. (2020). Negative Resistance in Cascode Transistors. IEEE Transactions on Power Electronics. 35(10). 9978–9981. 2 indexed citations
9.
Nela, Luca, et al.. (2020). Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes. IEEE Transactions on Power Electronics. 36(2). 1269–1273. 35 indexed citations
10.
Nikoo, Mohammad Samizadeh, et al.. (2020). Nanoplasma-enabled picosecond switches for ultrafast electronics. Nature. 579(7800). 534–539. 75 indexed citations
11.
Erp, Remco van, Reza Soleimanzadeh, Luca Nela, Georgios Kampitsis, & Elison Matioli. (2020). Co-designing electronics with microfluidics for more sustainable cooling. Nature. 585(7824). 211–216. 744 indexed citations breakdown →
12.
Ma, Jun, et al.. (2020). Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors. IEEE Electron Device Letters. 41(3). 321–324. 19 indexed citations
13.
Jafari, Armin, et al.. (2020). Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies. IEEE Transactions on Power Electronics. 35(12). 12595–12600. 70 indexed citations
14.
Nikoo, Mohammad Samizadeh, et al.. (2019). Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires. IEEE Microwave and Wireless Components Letters. 30(1). 66–69. 8 indexed citations
15.
Soleimanzadeh, Reza, Mehdi Naamoun, Riyaz Abdul Khadar, Remco van Erp, & Elison Matioli. (2019). H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon. IEEE Electron Device Letters. 41(1). 119–122. 12 indexed citations
16.
Nikoo, Mohammad Samizadeh, Armin Jafari, & Elison Matioli. (2019). On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control. IEEE Electron Device Letters. 40(4). 613–615. 2 indexed citations
17.
Jafari, Armin, et al.. (2019). Enhanced DAB for Efficiency Preservation Using Adjustable-Tap High-Frequency Transformer. IEEE Transactions on Power Electronics. 35(7). 6673–6677. 57 indexed citations
18.
Nela, Luca, Georgios Kampitsis, Jun Ma, & Elison Matioli. (2019). Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits. IEEE Electron Device Letters. 41(1). 99–102. 28 indexed citations
19.
Liu, Chao, Riyaz Abdul Khadar, & Elison Matioli. (2017). GaN-on-Si Quasi-Vertical Power MOSFETs. IEEE Electron Device Letters. 39(1). 71–74. 97 indexed citations
20.
Ma, Jun, Minghua Zhu, & Elison Matioli. (2017). 900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain. IEEE Electron Device Letters. 38(12). 1704–1707. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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