Y. Dora

1.1k total citations · 1 hit paper
12 papers, 886 citations indexed

About

Y. Dora is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Y. Dora has authored 12 papers receiving a total of 886 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Y. Dora's work include GaN-based semiconductor devices and materials (12 papers), Silicon Carbide Semiconductor Technologies (5 papers) and Radio Frequency Integrated Circuit Design (4 papers). Y. Dora is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), Silicon Carbide Semiconductor Technologies (5 papers) and Radio Frequency Integrated Circuit Design (4 papers). Y. Dora collaborates with scholars based in United States and South Korea. Y. Dora's co-authors include Umesh K. Mishra, S. Keller, Steven P. DenBaars, A. Chakraborty, L. McCarthy, S. Heikman, Alessandro Chini, Huili Grace Xing, Chang Soo Suh and James S. Speck and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and physica status solidi (a).

In The Last Decade

Y. Dora

12 papers receiving 831 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2006 367 citations Y. Dora, A. Chakraborty et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Y. Dora United States	9	818	681	426	165	156	12	886
Dave Bour United States	8	653 0.8×	601 0.9×	312 0.7×	130 0.8×	153 1.0×	10	751
J.W. Chung United States	7	665 0.8×	538 0.8×	367 0.9×	168 1.0×	137 0.9×	10	751
K. Čičo Slovakia	15	529 0.6×	465 0.7×	306 0.7×	142 0.9×	116 0.7×	25	611
Minhan Mi China	19	936 1.1×	745 1.1×	430 1.0×	181 1.1×	225 1.4×	91	991
Masahiko Kuraguchi Japan	14	1.3k 1.6×	1.1k 1.6×	610 1.4×	268 1.6×	255 1.6×	30	1.4k
A.P. Zhang United States	8	693 0.8×	549 0.8×	272 0.6×	197 1.2×	253 1.6×	12	791
Hirokuni Tokuda Japan	17	931 1.1×	750 1.1×	553 1.3×	255 1.5×	187 1.2×	71	1.1k
Chihoko Mizue Japan	7	674 0.8×	621 0.9×	446 1.0×	141 0.9×	91 0.6×	11	740
Oleg Laboutin United States	15	751 0.9×	533 0.8×	404 0.9×	187 1.1×	192 1.2×	51	811
Yoshinobu Narita Japan	14	709 0.9×	459 0.7×	377 0.9×	216 1.3×	149 1.0×	32	754

Countries citing papers authored by Y. Dora

Since Specialization

Citations

This map shows the geographic impact of Y. Dora's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Dora with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Dora more than expected).

Fields of papers citing papers by Y. Dora

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Dora. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Dora. The network helps show where Y. Dora may publish in the future.

Co-authorship network of co-authors of Y. Dora

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Dora. A scholar is included among the top collaborators of Y. Dora based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Dora. Y. Dora is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

1.

Keller, S., Y. Dora, Srabanti Chowdhury, et al.. (2011). Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2086–2088. 6 indexed citations

2.

Wu, Yifeng, R. Coffie, Y. Dora, et al.. (2011). Total GaN solution to electrical power conversion. 217–218. 20 indexed citations

3.

Keller, S., Y. Dora, Feng Wu, et al.. (2010). Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition. Applied Physics Letters. 97(14). 142109–142109. 18 indexed citations

4.

Dora, Y., A. Chakraborty, S. Heikman, et al.. (2006). Effect of ohmic contacts on buffer leakage of GaN transistors. IEEE Electron Device Letters. 27(7). 529–531. 53 indexed citations

5.

Palacios, Tomás, Y. Dora, A. Chakraborty, et al.. (2006). Optimization of AlGaN/GaN HEMTs for high frequency operation. physica status solidi (a). 203(7). 1493–1493. 18 indexed citations

6.

Suh, Chang Soo, Y. Dora, N. Fichtenbaum, et al.. (2006). High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate. 1–3. 28 indexed citations

7.

Dora, Y., A. Chakraborty, L. McCarthy, et al.. (2006). High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates. IEEE Electron Device Letters. 27(9). 713–715. 367 indexed citations breakdown →

8.

Dora, Y., A. Chakraborty, L. McCarthy, et al.. (2006). High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates. 161–162. 2 indexed citations

9.

Dora, Y., Dmitri O. Klenov, P. Hansen, et al.. (2006). ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 575–581. 42 indexed citations

10.

Palacios, Tomás, Y. Dora, A. Chakraborty, et al.. (2006). Optimization of AlGaN/GaN HEMTs for high frequency operation. physica status solidi (a). 203(7). 1845–1850. 30 indexed citations

11.

Dora, Y., Chang Soo Suh, A. Chakraborty, et al.. (2005). Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs. 191–192. 5 indexed citations

12.

Xing, Huili Grace, Y. Dora, Alessandro Chini, et al.. (2004). High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates. IEEE Electron Device Letters. 25(4). 161–163. 297 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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