C. J. Sun

1.9k total citations
38 papers, 1.6k citations indexed

About

C. J. Sun is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. J. Sun has authored 38 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 17 papers in Atomic and Molecular Physics, and Optics and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. J. Sun's work include GaN-based semiconductor devices and materials (37 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (13 papers). C. J. Sun is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (13 papers). C. J. Sun collaborates with scholars based in United States, Germany and China. C. J. Sun's co-authors include M. Asif Khan, H. X. Jiang, J. Y. Lin, Q. Chen, M. S. Shur, Patrick Kung, A. Saxler, M. Smith, Hitoshi Ohsato and Manijeh Razeghi and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and PLoS ONE.

In The Last Decade

C. J. Sun

34 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. J. Sun United States	21	1.4k	666	592	591	516	38	1.6k
Norikatsu Koide Japan	15	1.4k 1.1×	615 0.9×	685 1.2×	538 0.9×	480 0.9×	28	1.5k
M. S. Minsky United States	16	1.3k 1.0×	619 0.9×	567 1.0×	410 0.7×	705 1.4×	18	1.5k
R. Höpler Germany	6	1.2k 0.9×	642 1.0×	584 1.0×	413 0.7×	348 0.7×	7	1.4k
E. Born Germany	12	882 0.6×	437 0.7×	648 1.1×	519 0.9×	441 0.9×	24	1.5k
C. J. Eiting United States	21	1.1k 0.8×	679 1.0×	495 0.8×	600 1.0×	419 0.8×	50	1.5k
Jeffrey J. Figiel United States	25	1.4k 1.0×	720 1.1×	729 1.2×	820 1.4×	659 1.3×	52	2.0k
Xu‐Qiang Shen Japan	23	1.1k 0.8×	614 0.9×	668 1.1×	539 0.9×	537 1.0×	98	1.6k
T. Metzger Germany	10	935 0.7×	489 0.7×	609 1.0×	424 0.7×	395 0.8×	16	1.3k
S. F. LeBoeuf United States	17	978 0.7×	395 0.6×	426 0.7×	508 0.9×	434 0.8×	33	1.1k
Kazuyuki Tadatomo Japan	19	1.8k 1.3×	819 1.2×	944 1.6×	694 1.2×	641 1.2×	122	2.0k

Countries citing papers authored by C. J. Sun

Since Specialization

Citations

This map shows the geographic impact of C. J. Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Sun more than expected).

Fields of papers citing papers by C. J. Sun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Sun. The network helps show where C. J. Sun may publish in the future.

Co-authorship network of co-authors of C. J. Sun

This figure shows the co-authorship network connecting the top 25 collaborators of C. J. Sun. A scholar is included among the top collaborators of C. J. Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. J. Sun. C. J. Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Zhichao, Zhuangzhuang Ma, Yifei Chen, et al.. (2025). Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure. AIP Advances. 15(3).

Sun, C. J., et al.. (2025). Business environment and its impact on high-quality economic development: A configurational analysis of enhancement pathways. PLoS ONE. 20(1). e0302508–e0302508.

Yang, Ning, et al.. (1999). Ultrafast second-harmonic generation spectroscopy of GaN thin films on sapphire. Physical review. B, Condensed matter. 59(4). 2932–2946. 35 indexed citations

Pau, Stanley, J. Kühl, M. Asif Khan, & C. J. Sun. (1998). Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN. Physical review. B, Condensed matter. 58(19). 12916–12919. 16 indexed citations

Pau, Stanley, et al.. (1997). Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time. Physical review. B, Condensed matter. 56(20). R12718–R12721. 19 indexed citations

Kato, Tomohisa, Patrick Kung, A. Saxler, et al.. (1997). Morphology of twinned GaN grown on (11·0) sapphire substrates. Solid-State Electronics. 41(2). 227–229. 6 indexed citations

Sun, C. J., M. Zubair Anwar, Qihui Chen, et al.. (1997). Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes. Applied Physics Letters. 70(22). 2978–2980. 76 indexed citations

Sun, C. J., Jinhong Yang, Beomdu Lim, et al.. (1997). Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates. Applied Physics Letters. 70(11). 1444–1446. 9 indexed citations

Lin, J. Y., et al.. (1996). Metastability and Persistent Photoconductivity of Mg-Doped P-Type GaN. APS March Meeting Abstracts. 1 indexed citations

10.

Wiesmann, D., Igal Brener, L. N. Pfeiffer, M.A. Khan, & C. J. Sun. (1996). Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films. Applied Physics Letters. 69(22). 3384–3386. 34 indexed citations

11.

Sun, C. J., et al.. (1996). Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition. Applied Physics Letters. 68(8). 1129–1131. 28 indexed citations

12.

Khan, M. Asif, et al.. (1996). Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors. Applied Physics Letters. 68(4). 514–516. 148 indexed citations

13.

Chen, Q., et al.. (1996). High transconductance heterostructure field-effect transistors based on AlGaN/GaN. Applied Physics Letters. 69(6). 794–796. 98 indexed citations

14.

Chen, Q., C. J. Sun, M. S. Shur, et al.. (1995). Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2397. 283–283. 9 indexed citations

15.

Smith, M., G. D. Chen, J. Y. Lin, et al.. (1995). Acceptor-bound exciton recombination dynamics in p-type GaN. Applied Physics Letters. 67(22). 3295–3297. 20 indexed citations

16.

Razeghi, Manijeh, et al.. (1995). Exploration of entire range of III–V semiconductors and their device applications. Materials Science and Technology. 11(1). 3–30. 1 indexed citations

17.

Chen, G. D., M. Smith, J. Y. Lin, et al.. (1995). Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters. 67(12). 1653–1655. 49 indexed citations

18.

Kung, Patrick, C. J. Sun, A. Saxler, Hitoshi Ohsato, & M. Razeghi. (1994). Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates. Journal of Applied Physics. 75(9). 4515–4519. 77 indexed citations

19.

Sun, C. J., et al.. (1994). A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate. Journal of Applied Physics. 75(8). 3964–3967. 87 indexed citations

20.

Saxler, A., Patrick Kung, C. J. Sun, E. Bigan, & Manijeh Razeghi. (1994). High quality aluminum nitride epitaxial layers grown on sapphire substrates. Applied Physics Letters. 64(3). 339–341. 78 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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