B. Monemar

1.7k total citations
57 papers, 1.5k citations indexed

About

B. Monemar is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Monemar has authored 57 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Condensed Matter Physics, 27 papers in Materials Chemistry and 25 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Monemar's work include GaN-based semiconductor devices and materials (45 papers), ZnO doping and properties (24 papers) and Semiconductor Quantum Structures and Devices (21 papers). B. Monemar is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), ZnO doping and properties (24 papers) and Semiconductor Quantum Structures and Devices (21 papers). B. Monemar collaborates with scholars based in Sweden, Japan and United States. B. Monemar's co-authors include T. Paskova, D. Hommel, S. Figge, Hiroshi Amano, Isamu Akasaki, Erik Janzén, R. Schifano, B. Arnaudov, Vanya Darakchieva and E. Valcheva and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Monemar

57 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Monemar Sweden 20 1.2k 791 720 511 408 57 1.5k
C. J. Sun United States 21 1.4k 1.2× 592 0.7× 666 0.9× 516 1.0× 591 1.4× 38 1.6k
M. S. Minsky United States 16 1.3k 1.2× 567 0.7× 619 0.9× 705 1.4× 410 1.0× 18 1.5k
Norikatsu Koide Japan 15 1.4k 1.2× 685 0.9× 615 0.9× 480 0.9× 538 1.3× 28 1.5k
Carsten Netzel Germany 18 1.3k 1.2× 699 0.9× 662 0.9× 552 1.1× 407 1.0× 57 1.5k
C. J. Eiting United States 21 1.1k 0.9× 495 0.6× 679 0.9× 419 0.8× 600 1.5× 50 1.5k
S. X. Li United States 12 1.0k 0.9× 772 1.0× 667 0.9× 516 1.0× 572 1.4× 17 1.5k
L. Eckey Germany 18 1.2k 1.0× 813 1.0× 621 0.9× 835 1.6× 688 1.7× 41 1.6k
J. Off Germany 18 1.4k 1.2× 599 0.8× 611 0.8× 802 1.6× 412 1.0× 55 1.6k
S. Krishnankutty United States 16 1.0k 0.9× 417 0.5× 576 0.8× 429 0.8× 395 1.0× 31 1.2k
N. Teraguchi Japan 18 763 0.7× 605 0.8× 468 0.7× 431 0.8× 580 1.4× 47 1.2k

Countries citing papers authored by B. Monemar

Since Specialization
Citations

This map shows the geographic impact of B. Monemar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Monemar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Monemar more than expected).

Fields of papers citing papers by B. Monemar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Monemar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Monemar. The network helps show where B. Monemar may publish in the future.

Co-authorship network of co-authors of B. Monemar

This figure shows the co-authorship network connecting the top 25 collaborators of B. Monemar. A scholar is included among the top collaborators of B. Monemar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Monemar. B. Monemar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eriksson, Martin, T. Paskova, Xinqiang Wang, et al.. (2019). Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity. AIP Advances. 9(1). 1 indexed citations
2.
Monemar, B., T. Paskova, Г. Позина, et al.. (2009). Evidence for Two Mg Related Acceptors in GaN. Physical Review Letters. 102(23). 235501–235501. 108 indexed citations
3.
Shubina, T. V., S. V. Ivanov, V. N. Jmerik, et al.. (2007). Inhomogeneous InGaN and InN with In-enriched Nanostructures. AIP conference proceedings. 893. 269–270. 5 indexed citations
4.
Shubina, T. V., A. Vasson, J. Leymarie, et al.. (2007). Localized plasmons at pores and clusters within inhomogeneous indium nitride films. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2445–2448. 4 indexed citations
5.
Monemar, B., T. Paskova, Filip Tuomisto, et al.. (2006). Dominant shallow acceptor enhanced by oxygen doping in GaN. Physica B Condensed Matter. 376-377. 440–443. 17 indexed citations
6.
Gogova, D., E. Talik, Ivan G. Ivanov, & B. Monemar. (2005). Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template. Physica B Condensed Matter. 371(1). 133–139. 12 indexed citations
7.
Figge, S., T. Böttcher, Roland Kröger, et al.. (2005). Optoelectronic devices on bulk GaN. Journal of Crystal Growth. 281(1). 101–106. 7 indexed citations
8.
Arnaudov, B., T. Paskova, Björn Magnusson, et al.. (2004). Free-to-bound radiative recombination in highly conducting InN epitaxial layers. Superlattices and Microstructures. 36(4-6). 563–571. 7 indexed citations
9.
Darakchieva, Vanya, T. Paskova, E. Valcheva, et al.. (2004). Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties. Superlattices and Microstructures. 36(4-6). 573–580. 15 indexed citations
10.
Paskova, T., T. Paskova, P. O. Holtz, & B. Monemar. (2004). Polarized photoluminescence of exciton-polaritons in free-standing GaN. physica status solidi (a). 201(4). 678–685. 12 indexed citations
11.
Gogova, D., A. Kasic, Henrik Larsson, et al.. (2004). Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template. Journal of Applied Physics. 96(1). 799–806. 46 indexed citations
12.
Kasic, A., D. Gogova, H. Peter Larsson, et al.. (2004). Highly homogeneous bulk-like 2′′ GaN grown by HVPE on MOCVD–GaN template. Journal of Crystal Growth. 275(1-2). e387–e393. 9 indexed citations
13.
Shubina, T. V., T. Paskova, А. А. Торопов, С. В. Иванов, & B. Monemar. (2002). Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly π-polarized line near theAexciton. Physical review. B, Condensed matter. 65(7). 10 indexed citations
14.
Shubina, T. V., et al.. (2001). Micro-Photoluminescence Spectroscopy of Exciton-Polaritons in GaN with the Wave Vector k Normal to the c-Axis. physica status solidi (b). 228(2). 481–484. 1 indexed citations
15.
Arnaudov, B., et al.. (2001). Modeling of the free-electron recombination band in emission spectra of highly conductingn−GaN. Physical review. B, Condensed matter. 64(4). 54 indexed citations
16.
Paskova, T., et al.. (2000). Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots. Physical review. B, Condensed matter. 62(11). 7344–7349. 25 indexed citations
17.
Позина, Г., J. P. Bergman, B. Monemar, et al.. (2000). Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant. Applied Physics Letters. 76(23). 3388–3390. 27 indexed citations
18.
Ni, W.-X., Г. Позина, Leif A. A. Pettersson, et al.. (1998). Characterization of strained Si/Si1−yCy structures prepared by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1621–1626. 2 indexed citations
19.
Monemar, B., et al.. (1993). Excited 2sstate of a donor confined in a GaAs/AlxGa1−xAs quantum well. Physical review. B, Condensed matter. 47(16). 10596–10600. 1 indexed citations
20.
Zhao, Q. X., et al.. (1993). Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures. Physical review. B, Condensed matter. 48(16). 11890–11896. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by C. J. Sun Breakdown of academic impact, for papers by M. S. Minsky Breakdown of academic impact, for papers by Norikatsu Koide Breakdown of academic impact, for papers by Carsten Netzel Breakdown of academic impact, for papers by C. J. Eiting Breakdown of academic impact, for papers by S. X. Li Breakdown of academic impact, for papers by L. Eckey Breakdown of academic impact, for papers by J. Off Breakdown of academic impact, for papers by S. Krishnankutty Breakdown of academic impact, for papers by N. Teraguchi
Rankless by CCL
2026