M. Némoz

753 citations

46 papers · 651 indexed · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials 24
- Ga2O3 and related materials 18

Co-authors: G. Nataf P. Vennéguès P. de Mierry Sébastien Chenot Marc Portail M. Leroux Thierry Chassagne Marcin Zieliński
Journals: Journal of Crystal Growth (10 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (5 papers)physica status solidi (a) (4 papers)Physical Review B (2 papers)
Partner nations: France Germany Poland

In The Last Decade

M. Némoz

45 papers receiving 626 citations

Peers

Countries citing papers authored by M. Némoz

Since Specialization

Citations

This map shows the geographic impact of M. Némoz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Némoz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Némoz more than expected).

Fields of papers citing papers by M. Némoz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Némoz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Némoz. The network helps show where M. Némoz may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Némoz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Némoz Line = papers co-authored together M. Némoz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Advanced Electronic Materials ·Thiago Augusto Michels, 和兆荣, Idriss Abid, L. Kończewicz, Sandrine Juillaguet, Sylvie Contreras, S. Rennesson, Giordano Dias Caprioli, M. Némoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Y. Cordier, Arndt Stüber	2024	5
2	InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC Microelectronic Engineering ·Roudlotul Nadiya, Shuokun Shi, Chiara Mastropasqua, Adrien Michon, M. Némoz, Marc Portail, J. Zúñiga‐Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand	2023	1
3	Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN APL Materials ·朱敏刚, M. Némoz, H. Rotella, Arslan Karaköse, S. Vézian, Maxime Hugues, Y. Cordier	2023	21
4	(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission Nanomaterials ·智隆田辺, Nove Didajat, M. Némoz, Phuong Vuong, Світлана Геннадіївна Мунтян, Suresh Sundaram, A. Ougazzaden, J. Brault	2023	1
5	Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate Journal of Applied Physics ·Bintang Mukhammad Burhanudin Akbar, 和兆荣, Pérez Gil, M. Némoz, Catherine Bougerol, Farid Medjdoub, Y. Cordier	2023	8
6	High Al-content AlGaN channel high electron mobility transistors on silicon substrate SHILAP Revista de lepidopterología ·和兆荣, 陈进学, Thiago Augusto Michels, Julien Pernot, Arndt Stüber, M. Némoz, Y. Cordier, S. Rennesson, Giordano Dias Caprioli, M. Mihalopoulos, Farid Medjdoub	2023	3
7	Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications Microelectronic Engineering ·J. Chung, Éric Frayssinet, Sébastien Chenot, И.А. Исаков, M. Némoz, Y. Cordier	2023	1
8	Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN Materials ·智隆田辺, Adrien Michon, M. Némoz, Aimeric Courville, P. Vennéguès, Світлана Геннадіївна Мунтян, Phuong Vuong, Suresh Sundaram, A. Ougazzaden, J. Brault	2022	7
9	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Journal of Crystal Growth ·Pérez Gil, Diaa Eldin Moussa Sherif, Sébastien Chenot, J. Brault, M. Némoz, P. Vennéguès, B. Damilano, S. Vézian, Éric Frayssinet, Mahmud Yunus Mustofa, Aykut Gök, F. Lecourt, Nathalie Labat, Hassan Maher, Y. Cordier	2022	1
10	The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure physica status solidi (a) ·Emmi Pikler, Lai Wang, Zhibiao Hao, Yanjun Han, Changzheng Sun, Bing Xiong, Jian Wang, Hongtao Li, Yi Luo, J. Brault, Zoraida Valero Bravo, M. Némoz, Mo Li, 尤路, Qian Li	2019	1
11	Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Journal of Crystal Growth ·Y. Cordier, Diaa Eldin Moussa Sherif, O. Tottereau, Éric Frayssinet, Marc Portail, M. Némoz	2018	2
12	Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission Journal of Applied Physics ·Oleksii Misiura, J. Brault, Pérez Gil, B. Damilano, M. Korytov, Emilio Benfentai, M. Némoz, J. Massies, M. Leroux, Biju Choudhury	2017	13
13	Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE physica status solidi (a) ·S. Rennesson, Mathieu Leroux, Zoraida Valero Bravo, M. Némoz, Sébastien Chenot, J. Massies, Ludovic Largeau, Jara Líbia Costa Louredo, Malek Zegaoui, Farid Medjdoub, Fabrice Semond	2017	15
14	Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer physica status solidi (a) ·Éric Frayssinet, Phatu Boonmahittisut, Laura Rojas, 卢栋, Sébastien Chenot, M. Némoz, B. Damilano, Y. Cordier	2016	6
15	GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Journal of Crystal Growth ·Y. Cordier, B. Damilano, Oswaldo Tadeu Grzeco, Benčić Gaetano, Sergey S. Stolyar, Filip Tuomisto, P. Vennéguès, Éric Frayssinet, João Pereira, Marc Portail, M. Némoz	2015	6
16	Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films Journal of Crystal Growth ·Y. Cordier, Éric Frayssinet, Marc Portail, Marcin Zieliński, Thierry Chassagne, M. Korytov, Aimeric Courville, Sébastien Roy, M. Némoz, Magdalena Chmielowska, P. Vennéguès, H. P. D. Schenk, Grieve Hg, Juthamard Phorachata, D. Rondi	2014	13
17	Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates Applied Physics Letters ·J.‐M. Chauveau, 清水建設, Gaudi Agathon, M. Teisseire, S. V. Zaslonov, M. Némoz, J. Brault, B. Damilano, M. Leroux, B. Vinter	2013	11
18	Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth Nanoscale Research Letters ·Gesellschaft für Kulturelle Verbindungen mit dem Ausland, M. Leroux, P. Vennéguès, M. Némoz, G. Nataf, Edwar Ferney Romero Romero	2010	12
19	Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy Applied Physics Letters ·Edwar Ferney Romero Romero, Gesellschaft für Kulturelle Verbindungen mit dem Ausland, M. Némoz, G. Nataf	2009	46
20	Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode Electronics Letters ·Fan Wang, Shan Qing-we, M. Némoz, 陈岐岱 CHEN Qidai, Sébastien Chenot, G. Nataf	2008	7

About M. Némoz

M. Némoz is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 46 papers that have together received 651 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Metal and Thin Film Mechanics (19 papers), Ga2O3 and related materials (18 papers), Semiconductor materials and devices (11 papers), ZnO doping and properties (11 papers), Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor Quantum Structures and Devices (7 papers) and Acoustic Wave Resonator Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (513 citations), Electronic, Optical and Magnetic Materials (292 citations), Mechanics of Materials (170 citations), Materials Chemistry (274 citations) and Atomic and Molecular Physics, and Optics (150 citations). M. Némoz has collaborated with scholars based in France, Germany and Poland. Frequent co-authors include G. Nataf, P. Vennéguès, P. de Mierry, Sébastien Chenot, Marc Portail, M. Leroux, Thierry Chassagne, Marcin Zieliński, Sébastien Roy and J. Brault. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Applied Physics, physica status solidi (a) and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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