Yuichi Minoura

450 total citations
19 papers, 347 citations indexed

About

Yuichi Minoura is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yuichi Minoura has authored 19 papers receiving a total of 347 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yuichi Minoura's work include GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Radio Frequency Integrated Circuit Design (7 papers). Yuichi Minoura is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Radio Frequency Integrated Circuit Design (7 papers). Yuichi Minoura collaborates with scholars based in Japan. Yuichi Minoura's co-authors include Toshihiro Ohki, Naoya Okamoto, Shiro Ozaki, Kozo Makiyama, Norikazu Nakamura, Masaru Sato, Junji Kotani, K. Joshin, Atsushi Yamada and Keiji Watanabe and has published in prestigious journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

Yuichi Minoura

19 papers receiving 330 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yuichi Minoura Japan 8 281 262 108 84 68 19 347
Quentin Diduck United States 9 328 1.2× 412 1.6× 126 1.2× 100 1.2× 114 1.7× 31 490
Xiang Zheng China 12 177 0.6× 245 0.9× 98 0.9× 99 1.2× 58 0.9× 41 350
S. Vitanov Austria 8 298 1.1× 250 1.0× 92 0.9× 36 0.4× 99 1.5× 13 325
Ivor Guiney United Kingdom 12 252 0.9× 269 1.0× 121 1.1× 63 0.8× 65 1.0× 41 349
X. Li United States 12 315 1.1× 172 0.7× 116 1.1× 127 1.5× 122 1.8× 34 347
Norikazu Nakamura Japan 12 347 1.2× 280 1.1× 167 1.5× 127 1.5× 72 1.1× 31 418
N. Killat United Kingdom 11 428 1.5× 385 1.5× 92 0.9× 171 2.0× 66 1.0× 18 480
Erdem Arkun United States 11 279 1.0× 284 1.1× 114 1.1× 77 0.9× 101 1.5× 27 370
Cen Kong China 9 301 1.1× 278 1.1× 128 1.2× 86 1.0× 48 0.7× 21 361
Ming Tao China 10 258 0.9× 242 0.9× 141 1.3× 80 1.0× 69 1.0× 18 328

Countries citing papers authored by Yuichi Minoura

Since Specialization
Citations

This map shows the geographic impact of Yuichi Minoura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuichi Minoura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuichi Minoura more than expected).

Fields of papers citing papers by Yuichi Minoura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuichi Minoura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuichi Minoura. The network helps show where Yuichi Minoura may publish in the future.

Co-authorship network of co-authors of Yuichi Minoura

This figure shows the co-authorship network connecting the top 25 collaborators of Yuichi Minoura. A scholar is included among the top collaborators of Yuichi Minoura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuichi Minoura. Yuichi Minoura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Ohki, Toshihiro, et al.. (2025). AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz. Applied Physics Express. 18(3). 34004–34004. 1 indexed citations
2.
Yamada, Atsushi, Yuichi Minoura, N. Kurahashi, et al.. (2024). 31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation. IEEE Electron Device Letters. 45(3). 324–327. 9 indexed citations
3.
Kotani, Junji, Kozo Makiyama, Toshihiro Ohki, et al.. (2023). High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Electronics Letters. 59(4). 5 indexed citations
4.
Ozaki, Shiro, Yuichi Minoura, Toshihiro Ohki, et al.. (2022). Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. physica status solidi (a). 219(7). 4 indexed citations
5.
Minoura, Yuichi, Toshihiro Ohki, Naoya Okamoto, et al.. (2022). GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process. Applied Physics Express. 15(3). 36501–36501. 5 indexed citations
6.
Ozaki, Shiro, Atsushi Yamada, Yuichi Minoura, et al.. (2021). First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. Applied Physics Express. 14(4). 41004–41004. 31 indexed citations
7.
Okamoto, Naoya, Atsushi Takahashi, Yuichi Minoura, et al.. (2020). Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 4 indexed citations
8.
Ozaki, Shiro, Atsushi Yamada, Toshihiro Ohki, et al.. (2020). Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. Japanese Journal of Applied Physics. 59(4). 46505–46505. 6 indexed citations
9.
Ohki, Toshihiro, Junji Kotani, Shiro Ozaki, et al.. (2020). Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates. Applied Physics Express. 14(1). 16502–16502. 34 indexed citations
10.
Minoura, Yuichi, Toshihiro Ohki, Atsushi Yamada, et al.. (2019). Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs. 2 indexed citations
11.
Minoura, Yuichi, Toshihiro Ohki, Naoya Okamoto, et al.. (2019). Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs. Japanese Journal of Applied Physics. 59(SG). SGGD03–SGGD03. 37 indexed citations
12.
Ohki, Toshihiro, Junji Kotani, Shiro Ozaki, et al.. (2019). Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. 1–4. 16 indexed citations
13.
Ohki, Toshihiro, Atsushi Yamada, Yuichi Minoura, et al.. (2018). An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader. IEEE Electron Device Letters. 40(2). 287–290. 68 indexed citations
14.
Kotani, Junji, Atsushi Yamada, Toshihiro Ohki, et al.. (2018). Recent advancement of GaN HEMT with InAlGaN barrier layer and future prospects of A1N-based electron devices. 30.4.1–30.4.4. 6 indexed citations
15.
Makiyama, Kozo, Shiro Ozaki, Toshihiro Ohki, et al.. (2016). High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier. 1–4. 3 indexed citations
16.
Makiyama, Kozo, Shiro Ozaki, Toshihiro Ohki, et al.. (2016). InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier. 31–34. 4 indexed citations
17.
Ohki, Toshihiro, Shiro Ozaki, Kozo Makiyama, et al.. (2016). 3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier. 24–26. 52 indexed citations
18.
Makiyama, Kozo, Shiro Ozaki, Toshihiro Ohki, et al.. (2015). Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz. 9.1.1–9.1.4. 53 indexed citations
19.
Morita, U., Yuji Yamakawa, Yoshitaka Ishisaki, et al.. (2006). Evaluation of 256-pixel TES microcalorimeter arrays with electrodeposited Bi absorbers. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 559(2). 539–541. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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