F. Lecourt

438 citations

21 papers · 345 indexed · h-index 9

Co-authors: Rémy Leblanc P. Frijlink Virginie Hoel N. Defrance Y. Cordier Jean-Claude de Jaeger Marie Lesecq N. Ketteniss
Topics: GaN-based semiconductor devices and materials (18 papers)Ga2O3 and related materials (10 papers)Radio Frequency Integrated Circuit Design (9 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices Journal of Crystal Growth IEEE Electron Device Letters
Partner nations: France Canada Germany

In The Last Decade

F. Lecourt

19 papers receiving 324 citations

Peers

Countries citing papers authored by F. Lecourt

Since Specialization

Citations

This map shows the geographic impact of F. Lecourt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Lecourt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Lecourt more than expected).

Fields of papers citing papers by F. Lecourt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Lecourt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Lecourt. The network helps show where F. Lecourt may publish in the future.

Co-authorship network of co-authors of F. Lecourt

This figure shows the co-authorship network connecting the top 25 collaborators of F. Lecourt. A scholar is included among the top collaborators of F. Lecourt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Lecourt. F. Lecourt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors 2022 ·Journal of Crystal Growth ·(unknown),(unknown),Sébastien Chenot,J. Brault,M. Némoz,P. Vennéguès,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	1
2	A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier 2021 ·(unknown),Rémy Leblanc,(unknown),F. Lecourt,(unknown),(unknown),(unknown)	4
3	Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors 2021 ·Solid-State Electronics ·(unknown),(unknown),Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	7
4	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),(unknown),Éric Frayssinet,(unknown),F. Lecourt,N. Defrance,Nathalie Labat,François Boone,A. Soltani,Abdelatif Jaouad,Y. Cordier,Hassan Maher	2
5	Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),N. Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2
6	12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process 2018 ·(unknown),Rémy Leblanc,F. Lecourt,P. Frijlink	36
7	A novel high-performance V-band GaN MMIC HPA for the QV-LIFT project 2018 ·(unknown),Rémy Leblanc,P. Frijlink,F. Lecourt,(unknown),George Goussetis,Giandomenico Amendola,(unknown),Giuseppe Valente,Giorgia Parca	5
8	10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process 2017 ·(unknown),(unknown),(unknown),(unknown),F. Lecourt,(unknown),P. Frijlink,Rémy Leblanc	57
9	6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process 2016 ·Rémy Leblanc,(unknown),(unknown),(unknown),(unknown),F. Lecourt,(unknown),P. Frijlink	34
10	Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate 2015 ·IEEE Electron Device Letters ·(unknown),F. Lecourt,(unknown),N. Defrance,Étienne Okada,Marie Lesecq,S. Rennesson,(unknown),Y. Cordier,Virginie Hoel,Jean-Claude de Jaeger	55
11	Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates 2013 ·IEEE Transactions on Electron Devices ·N. Defrance,F. Lecourt,(unknown),Marie Lesecq,Virginie Hoel,(unknown),Y. Cordier,(unknown),J.C. de Jaeger	17
12	Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances 2013 ·IEEE Transactions on Electron Devices ·S. Rennesson,F. Lecourt,(unknown),Magdalena Chmielowska,Sébastien Chenot,Marie Lesecq,Virginie Hoel,Étienne Okada,Y. Cordier,Jean-Claude de Jaeger	23
13	Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics 2013 ·The European Physical Journal Applied Physics ·(unknown),N. Defrance,(unknown),F. Lecourt,(unknown),Virginie Hoel,A. Soltani,(unknown)	0
14	Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT 2013 ·IEEE Electron Device Letters ·F. Lecourt,(unknown),N. Ketteniss,H. Behmenburg,(unknown),Virginie Hoel,H. Kalisch,Andrei Vescan,M. Heuken,Jean-Claude de Jaeger	39
15	435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing 2012 ·Electronics Letters ·S. Bouzid,Hassan Maher,N. Defrance,Virginie Hoel,F. Lecourt,(unknown),(unknown),P. Frijlink	4
16	The effect of gate length variation on InAlGaN/GaN HFET device characteristics 2012 ·Semiconductor Science and Technology ·N. Ketteniss,H. Behmenburg,F. Lecourt,N. Defrance,Virginie Hoel,(unknown),M. Heuken,H. Kalisch,Andrei Vescan	5
17	RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate 2011 ·Electronics Letters ·F. Lecourt,N. Ketteniss,H. Behmenburg,N. Defrance,Virginie Hoel,(unknown),Andrei Vescan,C. Giesen,M. Heuken,J.C. de Jaeger	9
18	InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz 2011 ·IEEE Electron Device Letters ·F. Lecourt,N. Ketteniss,H. Behmenburg,N. Defrance,Virginie Hoel,(unknown),Andrei Vescan,C. Giesen,M. Heuken,J.C. de Jaeger	27
19	High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate 2010 ·HAL (Le Centre pour la Communication Scientifique Directe) ·F. Lecourt,(unknown),N. Defrance,Virginie Hoel,(unknown),S. Bouzid,(unknown),Derek Smith,Hassan Maher	8
20	5 - Interprétation de cartes géographiques : Algorithmes de reconstruction des réseaux hydrographiques et routiers 1997 ·Traitement du signal ·Rachele Mariani,F. Lecourt,François Pierrot,(unknown),Y. Lecourtier	3

About F. Lecourt

F. Lecourt is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 21 papers that have together received 345 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (10 papers) and Radio Frequency Integrated Circuit Design (9 papers). The work is most often cited by research in Condensed Matter Physics (289 citations), Electronic, Optical and Magnetic Materials (101 citations) and Electrical and Electronic Engineering (269 citations). F. Lecourt has collaborated with scholars based in France, Canada and Germany. Frequent co-authors include Rémy Leblanc, P. Frijlink, Virginie Hoel, N. Defrance, Y. Cordier, Jean-Claude de Jaeger, Marie Lesecq, N. Ketteniss, M. Heuken and H. Behmenburg. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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