Hassan Maher

882 citations

71 papers · 632 indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Condensed Matter Physics 49
- GaN-based semiconductor devices and materials 49
Electrical and Electronic Engineering 63
- Semiconductor materials and devices 36
- Silicon Carbide Semiconductor Technologies 22
- Radio Frequency Integrated Circuit Design 12
- Advancements in Semiconductor Devices and Circuit Design 12

Co-authors: Maxime R. Dubois João Pedro F. Trovão Abdelatif Jaouad P. Frijlink N. Defrance Virginie Hoel J.C. de Jaeger A. Soltani
Journals: IEEE Electron Device Letters (8 papers)physica status solidi (a) (6 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)Semiconductor Science and Technology (3 papers)
Partner nations: France Canada United Kingdom

In The Last Decade

Hassan Maher

64 papers receiving 605 citations

Peers

Countries citing papers authored by Hassan Maher

Since Specialization

Citations

This map shows the geographic impact of Hassan Maher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hassan Maher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hassan Maher more than expected).

Fields of papers citing papers by Hassan Maher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hassan Maher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hassan Maher. The network helps show where Hassan Maher may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Hassan Maher, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hassan Maher Line = papers co-authored together Hassan Maher links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Air Gaps Fabrication for Sub-100 nm GaN HEMTs by Novel SF6 Plasma Etching SPIRE - Sciences Po Institutional REpository ·Maglaveras Nicolaos, Dr Unnati Sharma, Eugeny E. Zorin, E. Sok, Kehinde Adetoyese Adeyemi, (unknown), Hassan Maher	2026	0
2	Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates Semiconductor Science and Technology ·어수영, Susanne Hieronymi, 谢洲丽, R. Amala, Dominique Planson, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Y. Cordier, Hassan Maher, Raphaël Sommet, Jean‐Christophe Nallatamby, P. Vigneshwara Raja	2024	1
3	Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Crystals ·鈴木四郎, Camille Sonneville, Takenori Itohara, Pérez Gil, P. de Mierry, Éric Frayssinet, Y. Cordier, Els Van De Walle, Frédéric Morancho, Hassan Maher, Dominique Planson	2023	3
4	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Journal of Crystal Growth ·Pérez Gil, Diaa Eldin Moussa Sherif, Sébastien Chenot, J. Brault, M. Némoz, P. Vennéguès, B. Damilano, S. Vézian, Éric Frayssinet, Mahmud Yunus Mustofa, Aykut Gök, F. Lecourt, Nathalie Labat, Hassan Maher, Y. Cordier	2022	1
5	Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes Micro and Nanostructures ·P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Hassan Maher, Y. Cordier, Dominique Planson	2022	1
6	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor Semiconductor Science and Technology ·Mahmud Yunus Mustofa, Noureddine Chair, Kenji Hirashige, Éric Frayssinet, 季加海, F. Lecourt, N. Defrance, Nathalie Labat, François Boone, A. Soltani, Abdelatif Jaouad, Y. Cordier, Hassan Maher	2020	2
7	AlN grown by CBE for power device applications AIP Advances ·Catherine P. Hall, A Khalvat, Zhenning Du, 尤仲杰, 于跃洋, Kenji Hirashige, Sélly Socorro dos Praseres Lira, Rémy Beulé Dauzat, Χρυσόστομος Περδίος, Hassan Maher, Richard Arès	2020	0
8	Design Method of PCB Inductors for High-Frequency GaN Converters IEEE Transactions on Power Electronics ·SobechukwuWI Onwuzu, Nadir Idir, Arnaud Videt, Hassan Maher	2020	16
9	Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors Semiconductor Science and Technology ·Pérez Gil, 季加海, Sébastien Chenot, J. Brault, B. Damilano, S. Vézian, Éric Frayssinet, Mahmud Yunus Mustofa, Kenji Hirashige, N. Defrance, F. Lecourt, Nathalie Labat, Hassan Maher, Y. Cordier	2020	2
10	Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements IEEE Transactions on Electron Devices ·A Khalvat, Georges Pavlidis, Noureddine Chair, Sélly Socorro dos Praseres Lira, Kenji Hirashige, Ali Soltani Tehrani, Samuel Graham, François Boone, Hassan Maher	2019	12
11	Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications IEEE Electron Device Letters ·Mahmud Yunus Mustofa, Marie Lesecq, A Khalvat, Aykut Gök, Michel Rousseau, Hassan Maher, J.C. de Jaeger	2018	8
12	A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching physica status solidi (a) ·Sélly Socorro dos Praseres Lira, A. Soltani, İsmail Borazan, Abdelatif Jaouad, Maxime Darnon, François Boone, Hassan Maher	2018	10
13	Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High <italic>di/dt</italic> Applications IEEE Transactions on Power Electronics ·Lisa M. Pratt Ana Maria Carmo, Maxime R. Dubois, João Pedro F. Trovão, Hassan Maher	2018	41
14	Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology ·Sherly Veronica, B. Benbakhti, Alvaro Vanegas, Weidong Zhang, Sélly Socorro dos Praseres Lira, 石雪, K. Kálna, İlkenur ŞENTÜRK, Hassan Maher, A. Soltani	2017	8
15	AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process IEEE Electron Device Letters ·İsmail Borazan, Abdelatif Jaouad, A. Soltani, R B Bloomer, Vincent Aimez, Azlina Bte Abdullah, Hassan Maher	2017	20
16	Overvoltage Reduction with Enhanced Snubber Design for GaN-Based Electric Vehicle Drive HAL (Le Centre pour la Communication Scientifique Directe) ·Lisa M. Pratt Ana Maria Carmo, Maxime R. Dubois, João Pedro F. Trovão, Hassan Maher	2017	8
17	Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating Journal of Infrared Millimeter and Terahertz Waves ·A. MONEGER, 杨新奇, N. Zerounian, E. G. Iakovleva, Lei Cao, François Boone, Hassan Maher, Y. Cordier, F. Aniel	2015	13
18	Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs A. Scavennec, Hassan Maher, J. Décobert	2011	2
19	Monte Carlo Simulation of III–V Material-Based MOSFET for High Frequency and Ultra-Low Consumption Applications Journal of Nanoscience and Nanotechnology ·k Matt, Jérôme Saint-Martin, Arnaud Bournel, Hassan Maher, Glauco Siliprandi, Philippe Dollfus	2010	3
20	Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs) Materials Science and Engineering B ·W. Hong, Société française de physique, Hassan Maher, Dennis Richard J	2001	9

About Hassan Maher

Hassan Maher is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 71 papers that have together received 632 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (49 papers), Semiconductor materials and devices (36 papers), Silicon Carbide Semiconductor Technologies (22 papers), Ga2O3 and related materials (15 papers), Radio Frequency Integrated Circuit Design (12 papers), Semiconductor Quantum Structures and Devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor materials and interfaces (7 papers). The work is most often cited by research in Condensed Matter Physics (397 citations), Electrical and Electronic Engineering (498 citations), Electronic, Optical and Magnetic Materials (152 citations), Atomic and Molecular Physics, and Optics (118 citations) and Materials Chemistry (136 citations). Hassan Maher has collaborated with scholars based in France, Canada and United Kingdom. Frequent co-authors include Maxime R. Dubois, João Pedro F. Trovão, Abdelatif Jaouad, P. Frijlink, N. Defrance, Virginie Hoel, J.C. de Jaeger, A. Soltani, Mingwen Bai and Zdeněk Pala. Their work appears in journals such as IEEE Electron Device Letters, physica status solidi (a), Applied Physics Letters, IEEE Transactions on Electron Devices and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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