H. Behmenburg

519 total citations
37 papers, 443 citations indexed

About

H. Behmenburg is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, H. Behmenburg has authored 37 papers receiving a total of 443 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Condensed Matter Physics, 22 papers in Electronic, Optical and Magnetic Materials and 21 papers in Electrical and Electronic Engineering. Recurrent topics in H. Behmenburg's work include GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (22 papers) and Semiconductor materials and devices (15 papers). H. Behmenburg is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (22 papers) and Semiconductor materials and devices (15 papers). H. Behmenburg collaborates with scholars based in Germany, France and Belarus. H. Behmenburg's co-authors include M. Heuken, H. Kalisch, C. Giesen, Andrei Vescan, Rolf A. Jansen, N. Ketteniss, Virginie Hoel, F. Lecourt, Dirk Fahle and J. Woitok and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

H. Behmenburg

37 papers receiving 431 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Behmenburg Germany 13 398 219 207 145 104 37 443
C. Giesen Germany 14 436 1.1× 212 1.0× 251 1.2× 228 1.6× 149 1.4× 34 557
Christoph Hums Germany 9 429 1.1× 185 0.8× 152 0.7× 164 1.1× 132 1.3× 15 486
A. Zauner Netherlands 9 355 0.9× 185 0.8× 162 0.8× 228 1.6× 73 0.7× 23 438
Y. Dikme Germany 12 383 1.0× 170 0.8× 200 1.0× 146 1.0× 142 1.4× 44 431
C. J. Pan Taiwan 13 293 0.7× 220 1.0× 196 0.9× 255 1.8× 62 0.6× 26 428
S. M. Donovan United States 13 453 1.1× 174 0.8× 367 1.8× 158 1.1× 100 1.0× 38 551
Ł. Macht Netherlands 13 377 0.9× 197 0.9× 202 1.0× 203 1.4× 68 0.7× 23 434
B. Reuters Germany 13 423 1.1× 215 1.0× 229 1.1× 130 0.9× 124 1.2× 30 451
Yuma Todoroki Japan 10 327 0.8× 196 0.9× 105 0.5× 205 1.4× 76 0.7× 17 359
B. Sadovyi Poland 12 251 0.6× 141 0.6× 132 0.6× 145 1.0× 84 0.8× 33 325

Countries citing papers authored by H. Behmenburg

Since Specialization
Citations

This map shows the geographic impact of H. Behmenburg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Behmenburg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Behmenburg more than expected).

Fields of papers citing papers by H. Behmenburg

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Behmenburg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Behmenburg. The network helps show where H. Behmenburg may publish in the future.

Co-authorship network of co-authors of H. Behmenburg

This figure shows the co-authorship network connecting the top 25 collaborators of H. Behmenburg. A scholar is included among the top collaborators of H. Behmenburg based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Behmenburg. H. Behmenburg is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Meißner, Elke, Dirk Fahle, H. Behmenburg, et al.. (2020). Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures. AIP Advances. 10(4). 19 indexed citations
2.
Segura‐Ruiz, Jaime, Gema Martínez‐Criado, A. García‐Cristóbal, et al.. (2019). Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes. Nanomaterials. 9(5). 691–691. 2 indexed citations
3.
Behmenburg, H., et al.. (2018). Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon. IEEE Transactions on Electron Devices. 65(8). 3192–3198. 27 indexed citations
4.
Pécz, B., László S. Tóth, A. Adikimenakis, et al.. (2015). GaN heterostructures with diamond and graphene. Semiconductor Science and Technology. 30(11). 114001–114001. 6 indexed citations
5.
Naresh‐Kumar, G., Arantxa Vilalta‐Clemente, H. Behmenburg, et al.. (2014). Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors. AIP Advances. 4(12). 14 indexed citations
6.
Reuters, B., H. Hahn, H. Behmenburg, et al.. (2013). Insulating behavior of interfaces in regrown Al0.23Ga0.77N/GaN double heterostructures on Al0.07Ga0.93N back‐barrier templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 799–802. 3 indexed citations
7.
Alomari, M., David Maier, H. Behmenburg, et al.. (2013). Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation. Solid-State Electronics. 89. 207–211. 9 indexed citations
8.
Hahn, H., H. Behmenburg, N. Ketteniss, et al.. (2013). Enhancement mode InAlGaN/GaN MISHFETs with plasma‐oxidised AlOx/TiOx as gate insulator. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 840–843. 2 indexed citations
9.
Stuchlíková, Ł., et al.. (2012). Electrical characterization of the InAlN/GaN heterostructures by capacitance methods. 57. 51–54. 2 indexed citations
10.
Ketteniss, N., H. Behmenburg, H. Hahn, et al.. (2012). Quaternary Enhancement-Mode HFET With In Situ SiN Passivation. IEEE Electron Device Letters. 33(4). 519–521. 8 indexed citations
11.
Lecourt, F., N. Ketteniss, H. Behmenburg, et al.. (2011). RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate. Electronics Letters. 47(3). 212–214. 9 indexed citations
12.
Tuna, Ö., H. Behmenburg, C. Giesen, et al.. (2011). Dependence of InN properties on MOCVD growth parameters. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2044–2046. 16 indexed citations
13.
Behmenburg, H., C. Giesen, I. Regolin, et al.. (2011). Gold catalyst initiated growth of GaN nanowires by MOCVD. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2315–2317. 13 indexed citations
14.
Behmenburg, H., N. Ketteniss, Dirk Fahle, et al.. (2010). In situ SiN passivation of AlInN/GaN heterostructures by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2104–2106. 8 indexed citations
15.
Behmenburg, H., Christoph Hums, P. Schley, et al.. (2010). Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN. Journal of Physics D Applied Physics. 43(36). 365102–365102. 68 indexed citations
16.
Ketteniss, N., H. Behmenburg, J. Woitok, et al.. (2010). Quaternary nitride heterostructure field effect transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2001–2003. 12 indexed citations
17.
Behmenburg, H., N. Ketteniss, J. Woitok, et al.. (2009). Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 12 indexed citations
18.
Behmenburg, H., J. Woitok, W. Zander, et al.. (2009). Epitaxy and characterisation of AlInGaN heterostructures for HEMT application. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 6 indexed citations
19.
Behmenburg, H., B. Reuters, J. Woitok, et al.. (2009). Impact of nitridation on structural and optical properties of MOVPE‐grown m‐plane GaN layers on LiAlO2. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 4 indexed citations
20.
Behmenburg, H., Ten‐Chin Wen, Y. Dikme, et al.. (2008). Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates. Journal of Crystal Growth. 310(23). 4976–4978. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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