H. Behmenburg

519 citations

37 papers · 443 indexed · h-index 13

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 22
Mechanics of Materials top 10%
- Metal and Thin Film Mechanics 8
Electrical and Electronic Engineering
- Semiconductor materials and devices 15
- Silicon Carbide Semiconductor Technologies 8
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 7
Biomedical Engineering
- Acoustic Wave Resonator Technologies 4
Materials Chemistry
- ZnO doping and properties 4

Co-authors: M. Heuken H. Kalisch C. Giesen Andrei Vescan Rolf A. Jansen N. Ketteniss Virginie Hoel F. Lecourt
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanics of Materials
Journals: Journal of Applied Physics (1 paper)Journal of Physics D Applied Physics (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: Germany France Belarus

In The Last Decade

H. Behmenburg

37 papers receiving 431 citations

Peers

Countries citing papers authored by H. Behmenburg

Since Specialization

Citations

This map shows the geographic impact of H. Behmenburg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Behmenburg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Behmenburg more than expected).

Fields of papers citing papers by H. Behmenburg

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Behmenburg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Behmenburg. The network helps show where H. Behmenburg may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Behmenburg, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Behmenburg Line = papers co-authored together H. Behmenburg links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures AIP Advances ·Sven Besendörfer,Elke Meißner,Thorsten Zweipfennig,Hady Yacoub,Dirk Fahle,H. Behmenburg,H. Kalisch,Andrei Vescan,Jochen Friedrich,Tobias Erlbacher	2020	19
2	Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes Nanomaterials ·Eleonora Secco,Heruy Taddese Mengistu,Jaime Segura‐Ruiz,Gema Martínez‐Criado,A. García‐Cristóbal,A. Cantarero,Bartosz Foltyński,H. Behmenburg,Christoph Giesen,M. Heuken,N. Garro	2019	2
3	Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon IEEE Transactions on Electron Devices ·Hady Yacoub,Thorsten Zweipfennig,Gerrit Lükens,H. Behmenburg,Dirk Fahle,M. Eickelkamp,M. Heuken,H. Kalisch,Andrei Vescan	2018	27
4	GaN heterostructures with diamond and graphene Semiconductor Science and Technology ·B. Pécz,László S. Tóth,G. Tsiakatouras,A. Adikimenakis,András Kovács,Martial Duchamp,Rafal E. Dunin–Borkowski,Rositza Yakimova,P. Neumann,H. Behmenburg,Bartosz Foltyński,C. Giesen,M. Heuken,A. Georgakilas	2015	6
5	Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors AIP Advances ·G. Naresh‐Kumar,Arantxa Vilalta‐Clemente,Saurabh Pandey,D. Skuridina,H. Behmenburg,Piero Gamarra,G. Patriarche,I. Vickridge,M.A. di Forte-Poisson,Patrick Vogt,Michael Kneissl,Magali Morales,P. Ruterana,A. Cavallini,Daniela Cavalcoli,C. Giesen,M. Heuken,C. Trager‐Cowan	2014	14
6	Insulating behavior of interfaces in regrown Al_0.23Ga_0.77N/GaN double heterostructures on Al_0.07Ga_0.93N back‐barrier templates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·B. Reuters,H. Hahn,H. Behmenburg,M. Heuken,H. Kalisch,Andrei Vescan	2013	3
7	Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Solid-State Electronics ·A. Alexewicz,M. Alomari,David Maier,H. Behmenburg,C. Giesen,M. Heuken,D. Pogány,E. Kohn,G. Strasser	2013	9
8	Enhancement mode InAlGaN/GaN MISHFETs with plasma‐oxidised AlO_x/TiO_x as gate insulator Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Hahn,H. Behmenburg,N. Ketteniss,M. Heuken,H. Kalisch,Andrei Vescan	2013	2
9	Electrical characterization of the InAlN/GaN heterostructures by capacitance methods Ł. Stuchlíková,M. Petrus,(unknown),J. Rybar,L. Harmatha,D. Donoval,J. Benkovska,H. Behmenburg,M. Heuken	2012	2
10	Quaternary Enhancement-Mode HFET With In Situ SiN Passivation IEEE Electron Device Letters ·N. Ketteniss,H. Behmenburg,H. Hahn,A. Noculak,B. Holländer,H. Kalisch,M. Heuken,Andrei Vescan	2012	8
11	RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate Electronics Letters ·F. Lecourt,N. Ketteniss,H. Behmenburg,N. Defrance,Virginie Hoel,M. Eickelkamp,Andrei Vescan,C. Giesen,M. Heuken,J.C. de Jaeger	2011	9
12	Dependence of InN properties on MOCVD growth parameters Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Ö. Tuna,H. Behmenburg,C. Giesen,H. Kalisch,Rolf A. Jansen,G. P. Yablonskii,M. Heuken	2011	16
13	Gold catalyst initiated growth of GaN nanowires by MOCVD Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Jan-Philipp Ahl,H. Behmenburg,C. Giesen,I. Regolin,W. Prost,F.‐J. Tegude,G. Radnóczi,B. Pécz,H. Kalisch,Rolf A. Jansen,M. Heuken	2011	13
14	In situ SiN passivation of AlInN/GaN heterostructures by MOVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Behmenburg,L. Rahimzadeh Khoshroo,C. Mauder,N. Ketteniss,K. H. Lee,M. Eickelkamp,M. Brast,Dirk Fahle,J. Woitok,Andrei Vescan,H. Kalisch,M. Heuken,Rolf A. Jansen	2010	8
15	Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN Journal of Physics D Applied Physics ·E. Sakalauskas,H. Behmenburg,Christoph Hums,P. Schley,Georg Rossbach,C. Giesen,M. Heuken,H. Kalisch,Rolf A. Jansen,J. Bläsing,A. Dadgar,A. Krost,R. Goldhahn	2010	68
16	Quaternary nitride heterostructure field effect transistors Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·L. Rahimzadeh Khoshroo,N. Ketteniss,C. Mauder,H. Behmenburg,J. Woitok,Ian D. Booker,J. Gruis,M. Heuken,Andrei Vescan,H. Kalisch,Rolf A. Jansen	2010	12
17	Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·H. Behmenburg,L. Rahimzadeh Khoshroo,M. Eickelkamp,C. Mauder,M. Fieger,N. Ketteniss,J. Woitok,Daniel Wamwangi,Matthias Wuttig,S. Hernández,Thomas Schäpers,M. Heuken,Andrei Vescan,H. Kalisch,Rolf A. Jansen	2009	12
18	Epitaxy and characterisation of AlInGaN heterostructures for HEMT application Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·L. Rahimzadeh Khoshroo,C. Mauder,H. Behmenburg,J. Woitok,W. Zander,J. Gruis,B. Reuters,J. Schubert,Andrei Vescan,M. Heuken,H. Kalisch,Rolf A. Jansen	2009	6
19	Impact of nitridation on structural and optical properties of MOVPE‐grown m‐plane GaN layers on LiAlO₂ Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·C. Mauder,L. Rahimzadeh Khoshroo,H. Behmenburg,B. Reuters,Manuel Bösing,M. V. Rzheutskii,Е. В. Луценко,G. P. Yablonskii,J. Woitok,Mitch M. C. Chou,M. Heuken,H. Kalisch,Rolf A. Jansen	2009	4
20	Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates Journal of Crystal Growth ·C. Mauder,L. Rahimzadeh Khoshroo,H. Behmenburg,Ten‐Chin Wen,Y. Dikme,M. V. Rzheutskii,G. P. Yablonskii,J. Woitok,Mitch M. C. Chou,M. Heuken,H. Kalisch,Rolf A. Jansen	2008	4

About H. Behmenburg

H. Behmenburg is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 37 papers that have together received 443 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Ga2O3 and related materials (22 papers), Semiconductor materials and devices (15 papers), Silicon Carbide Semiconductor Technologies (8 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor Quantum Structures and Devices (7 papers), Acoustic Wave Resonator Technologies (4 papers) and ZnO doping and properties (4 papers). The work is most often cited by research in Condensed Matter Physics (398 citations), Electronic, Optical and Magnetic Materials (219 citations) and Mechanics of Materials (93 citations). H. Behmenburg has collaborated with scholars based in Germany, France and Belarus. Frequent co-authors include M. Heuken, H. Kalisch, C. Giesen, Andrei Vescan, Rolf A. Jansen, N. Ketteniss, Virginie Hoel, F. Lecourt, Dirk Fahle and J. Woitok. Their work appears in journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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