Daniel Alquier

2.3k total citations
182 papers, 1.8k citations indexed

About

Daniel Alquier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Daniel Alquier has authored 182 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 155 papers in Electrical and Electronic Engineering, 57 papers in Atomic and Molecular Physics, and Optics and 46 papers in Biomedical Engineering. Recurrent topics in Daniel Alquier's work include Semiconductor materials and devices (61 papers), Silicon Carbide Semiconductor Technologies (52 papers) and Semiconductor materials and interfaces (49 papers). Daniel Alquier is often cited by papers focused on Semiconductor materials and devices (61 papers), Silicon Carbide Semiconductor Technologies (52 papers) and Semiconductor materials and interfaces (49 papers). Daniel Alquier collaborates with scholars based in France, Italy and Czechia. Daniel Alquier's co-authors include Guylaine Poulin‐Vittrant, Abhishek Singh Dahiya, F. Cayrel, Kevin Nadaud, Jean-François Michaud, Charles Opoku, Marc Portail, A. Claverie, Marcin Zieliński and Thierry Chassagne and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Daniel Alquier

175 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daniel Alquier France 23 1.3k 637 574 438 244 182 1.8k
David Cooper France 26 1.2k 1.0× 608 1.0× 661 1.2× 630 1.4× 286 1.2× 136 2.3k
Stephen W. Bedell United States 24 1.7k 1.3× 758 1.2× 924 1.6× 536 1.2× 254 1.0× 95 2.4k
S. Hernández Spain 22 1.1k 0.8× 513 0.8× 948 1.7× 563 1.3× 308 1.3× 106 1.7k
Jingtian Xi United States 18 1.2k 1.0× 570 0.9× 588 1.0× 674 1.5× 406 1.7× 45 2.3k
Stephen E. Saddow United States 28 2.0k 1.5× 520 0.8× 854 1.5× 394 0.9× 109 0.4× 179 2.6k
Yoosuf N. Picard United States 24 816 0.6× 278 0.4× 703 1.2× 225 0.5× 164 0.7× 85 1.6k
David Hwang United States 15 1.1k 0.8× 1.4k 2.2× 573 1.0× 345 0.8× 704 2.9× 27 2.4k
N. David Theodore United States 23 1.2k 0.9× 261 0.4× 677 1.2× 318 0.7× 61 0.3× 106 1.6k
W. I. Milne United Kingdom 23 1.2k 0.9× 1.3k 2.0× 1.1k 2.0× 479 1.1× 81 0.3× 60 2.5k
A.G. O’Neill United Kingdom 27 2.2k 1.7× 458 0.7× 686 1.2× 572 1.3× 96 0.4× 211 2.7k

Countries citing papers authored by Daniel Alquier

Since Specialization
Citations

This map shows the geographic impact of Daniel Alquier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Alquier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Alquier more than expected).

Fields of papers citing papers by Daniel Alquier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Alquier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Alquier. The network helps show where Daniel Alquier may publish in the future.

Co-authorship network of co-authors of Daniel Alquier

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Alquier. A scholar is included among the top collaborators of Daniel Alquier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Alquier. Daniel Alquier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Alquier, Daniel, Camille Sonneville, Dominique Planson, et al.. (2025). New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations. Materials Science in Semiconductor Processing. 198. 109681–109681.
3.
Roccaforte, Fabrizio, Daniel Alquier, Tsunenobu Kimoto, & Anant Agarwal. (2024). Silicon Carbide materials and devices: power electronics and innovative applications. Materials Science in Semiconductor Processing. 182. 108675–108675. 4 indexed citations
4.
Leone, Stefano, Meiling Zhang, Micka Bah, et al.. (2024). Understanding Interfaces in AlScN/GaN Heterostructures. Advanced Functional Materials. 34(39). 19 indexed citations
5.
Berger, C., Daniel Alquier, & Jean-François Michaud. (2024). How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC. Electronics. 13(1). 217–217. 3 indexed citations
6.
Zhang, Meiling, et al.. (2023). Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN. Microelectronic Engineering. 277. 112020–112020. 8 indexed citations
7.
Bah, Micka, Daniel Alquier, Marie Lesecq, et al.. (2023). Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors. Materials Science in Semiconductor Processing. 171. 107977–107977. 2 indexed citations
8.
Buckley, Julien, et al.. (2023). Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode. Microelectronic Engineering. 274. 111975–111975. 4 indexed citations
9.
Via, Francesco La, Daniel Alquier, Filippo Giannazzo, et al.. (2023). Emerging SiC Applications beyond Power Electronic Devices. Micromachines. 14(6). 1200–1200. 51 indexed citations
10.
Buckley, Julien, et al.. (2023). Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation. Energies. 16(14). 5447–5447. 5 indexed citations
11.
Michaud, Jean-François, et al.. (2022). Gas discrimination by simultaneous sound velocity and attenuation measurements using uncoated capacitive micromachined ultrasonic transducers. Scientific Reports. 12(1). 744–744. 2 indexed citations
12.
Iglesias, Luis E., et al.. (2021). Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing. Ultrasonics. 114. 106410–106410. 25 indexed citations
13.
Bah, Micka, Marie Lesecq, N. Defrance, et al.. (2020). Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies. Scientific Reports. 10(1). 14166–14166. 25 indexed citations
14.
Poulin‐Vittrant, Guylaine, et al.. (2019). A Comparative Study on the Effects of Au, ZnO and AZO Seed Layers on the Performance of ZnO Nanowire-Based Piezoelectric Nanogenerators. Materials. 12(16). 2511–2511. 19 indexed citations
15.
Dahiya, Abhishek Singh, Radu A. Sporea, Guylaine Poulin‐Vittrant, & Daniel Alquier. (2019). Stability evaluation of ZnO nanosheet based source-gated transistors. Scientific Reports. 9(1). 2979–2979. 29 indexed citations
16.
Alquier, Daniel, et al.. (2018). Performance Evaluation of CMUT-Based Ultrasonic Transformers for Galvanic Isolation. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 65(4). 617–629. 9 indexed citations
17.
Dahiya, Abhishek Singh, et al.. (2017). A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations. Scientific Reports. 7(1). 15187–15187. 60 indexed citations
18.
Dahiya, Abhishek Singh, Charles Opoku, F. Cayrel, et al.. (2016). Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors. Thin Solid Films. 617. 114–119. 6 indexed citations
19.
Grundmann, Marius, Marc Portail, Marcin Zieliński, et al.. (2016). Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001). Applied Physics Letters. 108(1). 4 indexed citations
20.
Opoku, Charles, Abhishek Singh Dahiya, Guylaine Poulin‐Vittrant, Nicolas Camara, & Daniel Alquier. (2016). Source‐gating effect in hydrothermally grown ZnO nanowire transistors. physica status solidi (a). 213(9). 2438–2445. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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