C. Giesen

671 total citations
34 papers, 557 citations indexed

About

C. Giesen is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, C. Giesen has authored 34 papers receiving a total of 557 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 18 papers in Electronic, Optical and Magnetic Materials and 17 papers in Electrical and Electronic Engineering. Recurrent topics in C. Giesen's work include GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (10 papers). C. Giesen is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (16 papers) and Semiconductor materials and devices (10 papers). C. Giesen collaborates with scholars based in Germany, France and Belarus. C. Giesen's co-authors include M. Heuken, A. Georgakilas, H. Behmenburg, E. Iliopoulos, A. Adikimenakis, Ö. Tuna, H. Kalisch, Rolf A. Jansen, R. Goldhahn and Holm Kirmse and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

C. Giesen

34 papers receiving 538 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Giesen Germany 14 436 251 228 212 149 34 557
Hiroaki Hayashi Japan 8 537 1.2× 192 0.8× 229 1.0× 268 1.3× 145 1.0× 18 608
P. Schley Germany 14 553 1.3× 231 0.9× 343 1.5× 328 1.5× 192 1.3× 26 703
H. P. D. Schenk France 17 595 1.4× 238 0.9× 254 1.1× 267 1.3× 206 1.4× 41 705
Aimeric Courville France 12 316 0.7× 128 0.5× 170 0.7× 157 0.7× 84 0.6× 27 406
W. T. Young United Kingdom 10 518 1.2× 254 1.0× 277 1.2× 186 0.9× 140 0.9× 13 617
Junichi Sonoda United States 9 384 0.9× 142 0.6× 267 1.2× 135 0.6× 202 1.4× 15 471
Yong‐Tae Moon South Korea 12 313 0.7× 154 0.6× 206 0.9× 158 0.7× 110 0.7× 16 399
S. M. Donovan United States 13 453 1.0× 367 1.5× 158 0.7× 174 0.8× 100 0.7× 38 551
Chinkyo Kim South Korea 10 271 0.6× 120 0.5× 255 1.1× 152 0.7× 89 0.6× 49 408
B. D. Little United States 11 490 1.1× 144 0.6× 263 1.2× 234 1.1× 299 2.0× 27 595

Countries citing papers authored by C. Giesen

Since Specialization
Citations

This map shows the geographic impact of C. Giesen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Giesen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Giesen more than expected).

Fields of papers citing papers by C. Giesen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Giesen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Giesen. The network helps show where C. Giesen may publish in the future.

Co-authorship network of co-authors of C. Giesen

This figure shows the co-authorship network connecting the top 25 collaborators of C. Giesen. A scholar is included among the top collaborators of C. Giesen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Giesen. C. Giesen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Minj, Albert, Daniela Cavalcoli, A. Cros, et al.. (2016). Surface properties of AlInGaN/GaN heterostructure. Materials Science in Semiconductor Processing. 55. 26–31. 8 indexed citations
2.
Minj, Albert, M. F. Romero, Ö. Tuna, et al.. (2016). Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures. Applied Physics Letters. 109(22). 4 indexed citations
3.
Pécz, B., László S. Tóth, A. Adikimenakis, et al.. (2015). GaN heterostructures with diamond and graphene. Semiconductor Science and Technology. 30(11). 114001–114001. 6 indexed citations
4.
Giesen, C., et al.. (2015). Comparison of CBr4 and DTBSi as precursors for p-type doping of GaSb. Università del Salento. 1(1). 183–186. 1 indexed citations
5.
Alomari, M., David Maier, H. Behmenburg, et al.. (2013). Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation. Solid-State Electronics. 89. 207–211. 9 indexed citations
6.
Tuna, Ö., H. Hahn, H. Kalisch, et al.. (2012). MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers. Journal of Crystal Growth. 370. 2–6. 3 indexed citations
7.
Lecourt, F., N. Ketteniss, H. Behmenburg, et al.. (2011). RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate. Electronics Letters. 47(3). 212–214. 9 indexed citations
8.
Linhart, W. M., Ö. Tuna, T. D. Veal, et al.. (2011). Surface electronic properties of In‐rich InGaN alloys grown by MOCVD. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 662–665. 4 indexed citations
9.
Borysiewicz, Michał A., E. Kamińska, M. Wzorek, et al.. (2011). Fundamentals and practice of metal contacts to wide band gap semiconductor devices. Crystal Research and Technology. 47(3). 261–272. 8 indexed citations
10.
Tuna, Ö., H. Behmenburg, C. Giesen, et al.. (2011). Dependence of InN properties on MOCVD growth parameters. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2044–2046. 16 indexed citations
11.
Behmenburg, H., C. Giesen, I. Regolin, et al.. (2011). Gold catalyst initiated growth of GaN nanowires by MOCVD. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2315–2317. 13 indexed citations
12.
Behmenburg, H., Christoph Hums, P. Schley, et al.. (2010). Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN. Journal of Physics D Applied Physics. 43(36). 365102–365102. 68 indexed citations
13.
Pozzovivo, G., J. Kuzmı́k, C. Giesen, et al.. (2009). Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4‐reactive ion etching surface treatment. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 11 indexed citations
14.
Kehagias, Th., G. P. Dimitrakopulos, Joseph Kioseoglou, et al.. (2009). Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy. Applied Physics Letters. 95(7). 58 indexed citations
15.
Abrutis, A., Valentina Plaušinaitienė, Martynas Skapas, et al.. (2008). Chemical vapor deposition of chalcogenide materials for phase-change memories. Microelectronic Engineering. 85(12). 2338–2341. 19 indexed citations
16.
Longo, Massimo, O. Salicio, Claudia Wiemer, et al.. (2008). Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications. Journal of Crystal Growth. 310(23). 5053–5057. 18 indexed citations
17.
Iliopoulos, E., A. Adikimenakis, C. Giesen, M. Heuken, & A. Georgakilas. (2008). Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry. Applied Physics Letters. 92(19). 79 indexed citations
18.
Spiering, S., Dimitrios Hariskos, Michael Powalla, et al.. (2008). MOCVD indium sulphide for application as a buffer layer in CIGS solar cells. Thin Solid Films. 517(7). 2328–2331. 17 indexed citations
19.
Dimroth, Frank, Andreas W. Bett, C. Giesen, & M. Heuken. (2004). Optimized 9×2-inch MOVPE reactor for the growth of Al-containing antimonides. Journal of Crystal Growth. 272(1-4). 706–710. 1 indexed citations
20.
Giesen, C., Xiangang Xu, R. Hövel, M. Heuken, & K. Heime. (2002). Silicon doping of InP grown by MOVPE using tertiarybutylphosphine. 47–50. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026