Tzu-Kun Ku

1.2k total citations
59 papers, 761 citations indexed

About

Tzu-Kun Ku is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Tzu-Kun Ku has authored 59 papers receiving a total of 761 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 9 papers in Materials Chemistry. Recurrent topics in Tzu-Kun Ku's work include Semiconductor materials and devices (22 papers), Advanced Memory and Neural Computing (21 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Tzu-Kun Ku is often cited by papers focused on Semiconductor materials and devices (22 papers), Advanced Memory and Neural Computing (21 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Tzu-Kun Ku collaborates with scholars based in Taiwan, United States and Japan. Tzu-Kun Ku's co-authors include Meng‐Fan Chang, Shyh-Shyuan Sheu, Chia-Chen Kuo, Ming‐Jinn Tsai, Albert Lee, Ming‐Jer Kao, Heng-Yuan Lee, Frederick T. Chen, Yu-Sheng Chen and Chien-Chen Lin and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Tzu-Kun Ku

56 papers receiving 740 citations

Peers

Tzu-Kun Ku

EEE

HA

MC

BE

CMN

Chrong-Jung Lin Taiwan

Seungchul Jung South Korea

Wei‐Cheng Lin Taiwan

Roshan Weerasekera United Kingdom

Tadahiko Sugibayashi Japan

Dimitri Linten Belgium

Chieh-Pu Lo Taiwan

Chrong Jung Lin Taiwan

Yong-Min Ju South Korea

Noboru Sakimura Japan

Chrong-Jung Lin Taiwan

Tzu-Kun Ku

538 ×0.8

EEE

91 ×0.9

HA

85 ×1.0

MC

37 ×0.5

BE

74 ×1.1

CMN

Citations per year, relative to Tzu-Kun Ku Tzu-Kun Ku (= 1×) peers Chrong-Jung Lin

Countries citing papers authored by Tzu-Kun Ku

Since Specialization

Citations

This map shows the geographic impact of Tzu-Kun Ku's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tzu-Kun Ku with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tzu-Kun Ku more than expected).

Fields of papers citing papers by Tzu-Kun Ku

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tzu-Kun Ku. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tzu-Kun Ku. The network helps show where Tzu-Kun Ku may publish in the future.

Co-authorship network of co-authors of Tzu-Kun Ku

This figure shows the co-authorship network connecting the top 25 collaborators of Tzu-Kun Ku. A scholar is included among the top collaborators of Tzu-Kun Ku based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tzu-Kun Ku. Tzu-Kun Ku is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Shen, Kuei‐Hung, et al.. (2015). Back-hopping phenomenon in perpendicular mangetic tunnel junctions. 1–2. 1 indexed citations

2.

Lee, Albert, Meng‐Fan Chang, Chien-Chen Lin, et al.. (2015). RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications. C76–C77. 29 indexed citations

3.

Lee, Albert, Meng‐Fan Chang, Chien-Chen Lin, et al.. (2015). RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications. 23 indexed citations

4.

Yang, Shan-Yi, et al.. (2015). A complementary magnetic field sensor using magnetic tunnel junction. 107. 1–2. 1 indexed citations

5.

Chang, Meng‐Fan, Albert Lee, Chien-Chen Lin, et al.. (2015). Read circuits for resistive memory (ReRAM) and memristor-based nonvolatile Logics. 569–574. 10 indexed citations

6.

Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2014). Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current. IEEE Electron Device Letters. 35(2). 202–204. 51 indexed citations

7.

Chen, Frederick T., Yu-Sheng Chen, Tai-Yuan Wu, & Tzu-Kun Ku. (2014). Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture. IEEE Electron Device Letters. 35(2). 223–225. 11 indexed citations

8.

Shen, Kuei‐Hung, et al.. (2014). Scaling properties of perpendicular MTJ with dual-CoFeB/MgO interfaces and step-etch structure. 34. 1–2. 1 indexed citations

9.

Chang, Meng‐Fan, Albert Lee, Chia-Chen Kuo, et al.. (2014). Challenges at circuit designs for resistive-type Nonvolatile memory and nonvolatile logics in mobile and cloud applications. 6 indexed citations

10.

Sheu, Shyh-Shyuan, Chia-Chen Kuo, Meng‐Fan Chang, et al.. (2013). A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application. 245–248. 42 indexed citations

11.

Ku, Tzu-Kun, Chia‐Hua Lin, P. J. Tzeng, et al.. (2013). (Invited) Technologies and Challenges of Fine Pitch Backside Via-Last TSV Process Integration for 3DIC Applications. ECS Transactions. 52(1). 3–6. 4 indexed citations

12.

Shen, Kuei‐Hung, et al.. (2013). Evidences of Reactive-Ion-Etching-Induced Damages to the Ferromagnet of Perpendicular Magnetic Tunnel Junctions. IEEE Electron Device Letters. 34(2). 241–243. 7 indexed citations

13.

Tzeng, Pei-Jer, John H. Lau, Chau‐Jie Zhan, et al.. (2013). Process integration of 3D Si interposer with double-sided active chip attachments. 86–93. 16 indexed citations

14.

Chen, F. T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2013). Resistance instabilities in a filament-based resistive memory. 5E.1.1–5E.1.7. 10 indexed citations

15.

Chang, Meng‐Fan, Ku-Feng Lin, Shyh-Shyuan Sheu, et al.. (2012). Circuit design challenges and trends in read sensing schemes for resistive-type emerging nonvolatile memory. 1–4. 6 indexed citations

16.

Chen, Jui‐Chin, John H. Lau, Pei-Jer Tzeng, et al.. (2012). Effects of Slurry in Cu Chemical Mechanical Polishing (CMP) of TSVs for 3-D IC Integration. IEEE Transactions on Components Packaging and Manufacturing Technology. 2(6). 956–963. 16 indexed citations

17.

Chang, Meng‐Fan, Pi-Feng Chiu, Yen-Huei Chen, et al.. (2011). A larger stacked layer number scalable TSV-based 3D-SRAM for high-performance universal-memory-capacity 3D-IC platforms. 74–75. 10 indexed citations

18.

Chen, Chien‐Chou, John H. Lau, Pei-Jer Tzeng, et al.. (2011). Effects of etch rate on scallop of through-silicon vias (TSVs) in 200mm and 300mm wafers. 1130–1135. 32 indexed citations

19.

Shen, Kuei‐Hung, et al.. (2002). CVD Cu technology development for advanced Cu interconnect applications. 242–244. 3 indexed citations

20.

Ku, Tzu-Kun, et al.. (1995). Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures. Japanese Journal of Applied Physics. 34(10R). 5789–5789. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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