S. Z. Rahaman

1.0k citations

49 papers · 859 indexed · h-index 17

Electrical and Electronic Engineering top 5%
Cellular and Molecular Neuroscience top 10%
Polymers and Plastics top 10%
Materials Chemistry
Atomic and Molecular Physics, and Optics

Co-authors: S. Maikap Ta–Chang Tien Heng-Yuan Lee Wei-Su Chen Amit Prakash Ming‐Jinn Tsai Writam Banerjee M.-J. Tsai
Topics: Advanced Memory and Neural Computing (47 papers)Ferroelectric and Negative Capacitance Devices (39 papers)Semiconductor materials and devices (18 papers)
Cited by: Polymers and Plastics Electrical and Electronic Engineering Cellular and Molecular Neuroscience
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Taiwan United States India

In The Last Decade

S. Z. Rahaman

45 papers receiving 838 citations

Peers

Countries citing papers authored by S. Z. Rahaman

Since Specialization

Citations

This map shows the geographic impact of S. Z. Rahaman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Z. Rahaman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Z. Rahaman more than expected).

Fields of papers citing papers by S. Z. Rahaman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Z. Rahaman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Z. Rahaman. The network helps show where S. Z. Rahaman may publish in the future.

Co-authorship network of co-authors of S. Z. Rahaman

This figure shows the co-authorship network connecting the top 25 collaborators of S. Z. Rahaman. A scholar is included among the top collaborators of S. Z. Rahaman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Z. Rahaman. S. Z. Rahaman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory 2023 ·S. Z. Rahaman,(unknown),Shan-Yi Yang,Yao‐Jen Chang,Hsin‐Han Lee,Kuan-Ming Chen,(unknown),Guanlong Chen,(unknown),(unknown),(unknown),(unknown),Jeng−Hua Wei,Shyh-Shyuan Sheu,Wei‐Chung Lo,(unknown),Shih-Chieh Chang	1
2	The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion 2022 ·Yao‐Jen Chang,Fang‐Ming Chen,Kuan-Ming Chen,Shan-Yi Yang,(unknown),S. Z. Rahaman,(unknown),Hsin‐Han Lee,(unknown),Guanlong Chen,(unknown),(unknown),Jeng−Hua Wei,Shyh-Shyuan Sheu,Wei‐Chung Lo,Yuan‐Chieh Tseng,Chih‐Huang Lai,Denny D. Tang,(unknown)	0
3	Process-induced magnetic tunnel junction damage and its recovery for the development of spin–orbit torque magnetic random access memory 2022 ·Journal of Magnetism and Magnetic Materials ·S. Z. Rahaman,Yao‐Jen Chang,(unknown),Shan-Yi Yang,Hsin‐Han Lee,(unknown),Guanlong Chen,(unknown),Jeng−Hua Wei,Shyh-Shyuan Sheu,Wei‐Chung Lo,(unknown),Shih-Chieh Chang	1
4	Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications 2020 ·Fang‐Ming Chen,(unknown),(unknown),Shan-Yi Yang,(unknown),Yao‐Jen Chang,Hsin‐Han Lee,(unknown),(unknown),(unknown),S. Z. Rahaman,Jeng−Hua Wei,Sih-Han Li,Shyh-Shyuan Sheu,Wei‐Chung Lo,Shih-Chieh Chang,Chih‐I Wu	0
5	Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection 2017 ·Scientific Reports ·Subhranu Samanta,S. Z. Rahaman,(unknown),Surajit Jana,(unknown),(unknown),Sourav Roy,Mrinmoy Dutta,Sreekanth Ginnaram,Amit Prakash,S. Maikap,Hsin-Ming Cheng,(unknown),Jian‐Tai Qiu,S. K. Ray	32
6	Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure 2016 ·Nanoscale Research Letters ·(unknown),Subhranu Samanta,S. Maikap,S. Z. Rahaman,Hsin-Ming Cheng	44
7	Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure 2015 ·Nanoscale Research Letters ·Debanjan Jana,(unknown),S. Z. Rahaman,S. Maikap	11
8	Conductive-bridging random access memory: challenges and opportunity for 3D architecture 2015 ·Nanoscale Research Letters ·Debanjan Jana,Sourav Roy,(unknown),Mrinmoy Dutta,S. Z. Rahaman,Rajat Mahapatra,S. Maikap	66
9	Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current 2014 ·IEEE Electron Device Letters ·Yu-Sheng Chen,Heng-Yuan Lee,Pang-Shiu Chen,Wei-Su Chen,(unknown),Pei-Yi Gu,Tai-Yuan Wu,Chen-Han Tsai,S. Z. Rahaman,Yu-De Lin,Frederick Chen,Ming‐Jinn Tsai,Tzu-Kun Ku	51
10	Resistive switching memory characteristics of Ge/GeO x nanowires and evidence of oxygen ion migration 2013 ·Nanoscale Research Letters ·Amit Prakash,S. Maikap,S. Z. Rahaman,(unknown),Santanu Manna,S. K. Ray	40
11	Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories 2013 ·Nanoscale Research Letters ·S. Z. Rahaman,S. Maikap	11
12	Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte 2012 ·Nanoscale Research Letters ·S. Z. Rahaman,S. Maikap,Atanu Das,Amit Prakash,(unknown),Chao‐Sung Lai,Ta–Chang Tien,Wei-Su Chen,Heng-Yuan Lee,Frederick T. Chen,Ming‐Jinn Tsai,Liann‐Be Chang	28
13	Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface 2012 ·Nanoscale Research Letters ·S. Z. Rahaman,S. Maikap,Ta–Chang Tien,Heng-Yuan Lee,Wei-Su Chen,Frederick T. Chen,Ming‐Jer Kao,Ming‐Jinn Tsai	71
14	Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO_x/AlO_x/W Cross-Point 2012 ·Japanese Journal of Applied Physics ·Writam Banerjee,S. Z. Rahaman,S. Maikap	13
15	Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament 2012 ·Journal of Applied Physics ·S. Z. Rahaman,S. Maikap,(unknown),(unknown),(unknown),Ta–Chang Tien,M.-J. Tsai	47
16	High-κ Al₂O₃/WO_xBilayer Dielectrics for Low-Power Resistive Switching Memory Applications 2011 ·Japanese Journal of Applied Physics ·Writam Banerjee,S. Z. Rahaman,Amit Prakash,S. Maikap	9
17	Low current bipolar resistive switching memory using Cu metallic filament in Ge<inf>0.2</inf>Se<inf>0.8</inf> solid-electrolyte 2010 ·S. Z. Rahaman,S. Maikap,Chia‐Hua Lin,P. J. Tzeng,H. Y. Lee,Ting Wu,Y. S. Chen,F. Chen,Ming‐Jer Kao,M.‐J. Tsai	0
18	Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte 2010 ·Microelectronics Reliability ·S. Z. Rahaman,S. Maikap	10
19	Low current (5 pA) resistive switching memory using high-к Ta<inf>2</inf>O<inf>5</inf> solid electrolyte 2009 ·S. Maikap,S. Z. Rahaman,Tong Wu,F. Chen,Ming‐Jer Kao,M.‐J. Tsai	9
20	Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO₂/HfAlO nanocrystal/Al₂O₃/Ptcapacitors 2008 ·Nanotechnology ·S. Maikap,S. Z. Rahaman,Ta–Chang Tien	27

About S. Z. Rahaman

S. Z. Rahaman is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry, having authored 49 papers that have together received 859 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (47 papers), Ferroelectric and Negative Capacitance Devices (39 papers) and Semiconductor materials and devices (18 papers). The work is most often cited by research in Polymers and Plastics (214 citations), Electrical and Electronic Engineering (830 citations) and Cellular and Molecular Neuroscience (233 citations). S. Z. Rahaman has collaborated with scholars based in Taiwan, United States and India. Frequent co-authors include S. Maikap, Ta–Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Amit Prakash, Ming‐Jinn Tsai, Writam Banerjee, M.-J. Tsai, Ming‐Jer Kao and Yu-Sheng Chen. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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