Heng-Yuan Lee

5.1k total citations · 1 hit paper
68 papers, 3.9k citations indexed

About

Heng-Yuan Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Heng-Yuan Lee has authored 68 papers receiving a total of 3.9k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 25 papers in Materials Chemistry and 8 papers in Polymers and Plastics. Recurrent topics in Heng-Yuan Lee's work include Advanced Memory and Neural Computing (60 papers), Ferroelectric and Negative Capacitance Devices (57 papers) and Semiconductor materials and devices (32 papers). Heng-Yuan Lee is often cited by papers focused on Advanced Memory and Neural Computing (60 papers), Ferroelectric and Negative Capacitance Devices (57 papers) and Semiconductor materials and devices (32 papers). Heng-Yuan Lee collaborates with scholars based in Taiwan, United States and China. Heng-Yuan Lee's co-authors include Ming‐Jinn Tsai, Pang-Shiu Chen, Yu-Sheng Chen, Shimeng Yu, Yi Wu, H.-S. Philip Wong, Byoungil Lee, Shyh-Shyuan Sheu, Wei-Su Chen and Frederick T. Chen and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Langmuir.

In The Last Decade

Heng-Yuan Lee

68 papers receiving 3.9k citations

Hit Papers

1 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Metal–Oxide RRAM

2012 2.2k citations Heng-Yuan Lee, Shimeng Yu et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Heng-Yuan Lee Taiwan	26	3.9k	1.0k	751	661	209	68	3.9k
Pang-Shiu Chen Taiwan	17	3.1k 0.8×	838 0.8×	571 0.8×	581 0.9×	153 0.7×	36	3.1k
Yu-Sheng Chen Taiwan	17	2.9k 0.7×	802 0.8×	515 0.7×	508 0.8×	160 0.8×	47	3.0k
Byoungil Lee United States	12	3.6k 0.9×	1.2k 1.2×	758 1.0×	709 1.1×	299 1.4×	19	3.7k
H.-S. Philip Wong United States	7	3.1k 0.8×	1.0k 1.0×	577 0.8×	551 0.8×	288 1.4×	11	3.3k
Peng Huang China	29	3.1k 0.8×	918 0.9×	363 0.5×	415 0.6×	329 1.6×	166	3.2k
Rohit S. Shenoy United States	15	2.2k 0.6×	500 0.5×	628 0.8×	399 0.6×	281 1.3×	31	2.4k
Chang Bum Lee South Korea	13	2.9k 0.7×	890 0.9×	671 0.9×	838 1.3×	71 0.3×	18	3.0k
Eike Linn Germany	27	3.2k 0.8×	1.6k 1.6×	410 0.5×	658 1.0×	97 0.5×	58	3.3k
Seung Ryul Lee South Korea	11	2.6k 0.7×	851 0.8×	541 0.7×	672 1.0×	74 0.4×	19	2.7k

Countries citing papers authored by Heng-Yuan Lee

Since Specialization

Citations

This map shows the geographic impact of Heng-Yuan Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Heng-Yuan Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Heng-Yuan Lee more than expected).

Fields of papers citing papers by Heng-Yuan Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Heng-Yuan Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Heng-Yuan Lee. The network helps show where Heng-Yuan Lee may publish in the future.

Co-authorship network of co-authors of Heng-Yuan Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Heng-Yuan Lee. A scholar is included among the top collaborators of Heng-Yuan Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Heng-Yuan Lee. Heng-Yuan Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ambrosi, Elia, et al.. (2024). Chalcogenide Selectors for Low Voltage and High Density Memory Applications. 1–2. 1 indexed citations

He, Hongyu, Jinghui Yang, Q.S. Shu, et al.. (2023). The First CMOS-Integrated Voltage-Controlled MRAM with 0.7ns Switching Time. 1–4. 2 indexed citations

Wu, Ming-Hung, Chien-Hua Hsu, Heng-Yuan Lee, et al.. (2019). A Comprehensive Modeling Framework for Ferroelectric Tunnel Junctions. 32.2.1–32.2.4. 34 indexed citations

Liu, Rui, Heng-Yuan Lee, & Shimeng Yu. (2017). Analyzing inference robustness of RRAM synaptic array in low-precision neural network. 521. 18–21. 12 indexed citations

Rahaman, S. Z., Yu-De Lin, Heng-Yuan Lee, et al.. (2017). The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories. Langmuir. 33(19). 4654–4665. 53 indexed citations

Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2014). Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current. IEEE Electron Device Letters. 35(2). 202–204. 51 indexed citations

Chen, Yu‐Sheng, Pang-Shiu Chen, Heng-Yuan Lee, et al.. (2014). Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode. Solid-State Electronics. 94. 1–5. 11 indexed citations

Sheu, Shyh-Shyuan, Chia-Chen Kuo, Meng‐Fan Chang, et al.. (2013). A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application. 245–248. 42 indexed citations

Chang, Meng‐Fan, Ku-Feng Lin, Shyh-Shyuan Sheu, et al.. (2012). Circuit design challenges and trends in read sensing schemes for resistive-type emerging nonvolatile memory. 1–4. 6 indexed citations

10.

Chen, Pang-Shiu, Yu-Sheng Chen, Heng-Yuan Lee, et al.. (2012). Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices. Microelectronic Engineering. 105. 40–45. 5 indexed citations

11.

Chen, Pang-Shiu, Yu‐Sheng Chen, Heng-Yuan Lee, et al.. (2012). Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory. Electrochemical and Solid-State Letters. 15(4). H136–H136. 8 indexed citations

12.

Rahaman, S. Z., S. Maikap, Atanu Das, et al.. (2012). Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. Nanoscale Research Letters. 7(1). 614–614. 28 indexed citations

13.

Rahaman, S. Z., S. Maikap, Ta–Chang Tien, et al.. (2012). Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. Nanoscale Research Letters. 7(1). 345–345. 71 indexed citations

14.

Chen, Pang-Shiu, Yu-Sheng Chen, Heng-Yuan Lee, et al.. (2012). Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory. Solid-State Electronics. 77. 41–45. 7 indexed citations

15.

Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2011). Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer. IEEE Electron Device Letters. 32(3). 390–392. 30 indexed citations

16.

Zhang, Lijie, Ru Huang, Frederick T. Chen, et al.. (2011). Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM. MY.8.1–MY.8.5. 15 indexed citations

17.

Chen, Frederick T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2011). Resistance switching for RRAM applications. Science China Information Sciences. 54(5). 1073–1086. 27 indexed citations

18.

Zhang, Lijie, Frederick T. Chen, Heng-Yuan Lee, et al.. (2011). Experimental investigation of the reliability issue of RRAM based on high resistance state conduction. Nanotechnology. 22(25). 254016–254016. 30 indexed citations

19.

Lee, Heng-Yuan, Pang-Shiu Chen, Tai-Yuan Wu, et al.. (2008). HfO<inf>2</inf> Bipolar Resistive Memory Device with Robust Endurance using AlCu as Electrode. 146–147. 4 indexed citations

20.

Maikap, S., Pei-Jer Tzeng, Ting‐Yu Wang, et al.. (2007). HfO₂/HfAlO/HfO₂ Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications. Japanese Journal of Applied Physics. 46(4R). 1803–1803. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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