Hangbing Lv

10.2k total citations · 2 hit papers
183 papers, 7.9k citations indexed

About

Hangbing Lv is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Hangbing Lv has authored 183 papers receiving a total of 7.9k indexed citations (citations by other indexed papers that have themselves been cited), including 174 papers in Electrical and Electronic Engineering, 46 papers in Materials Chemistry and 31 papers in Cellular and Molecular Neuroscience. Recurrent topics in Hangbing Lv's work include Advanced Memory and Neural Computing (159 papers), Ferroelectric and Negative Capacitance Devices (136 papers) and Semiconductor materials and devices (66 papers). Hangbing Lv is often cited by papers focused on Advanced Memory and Neural Computing (159 papers), Ferroelectric and Negative Capacitance Devices (136 papers) and Semiconductor materials and devices (66 papers). Hangbing Lv collaborates with scholars based in China, Singapore and United States. Hangbing Lv's co-authors include Qi Liu, Ming Liu, Shibing Long, Shibing Long, Xiaoxin Xu, Writam Banerjee, Wei Wang, Xiaolong Zhao, Ming Liu and Yingtao Li and has published in prestigious journals such as Advanced Materials, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Hangbing Lv

181 papers receiving 7.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

2012 503 citations Qi Liu, Hangbing Lv et al. profile →
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

2010 418 citations Qi Liu, Shibing Long et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hangbing Lv China	49	7.1k	2.4k	2.3k	1.7k	784	183	7.9k
Doo Seok Jeong South Korea	34	5.9k 0.8×	2.1k 0.9×	1.7k 0.7×	1.4k 0.8×	338 0.4×	126	6.5k
Ilia Valov Germany	48	7.8k 1.1×	2.0k 0.8×	3.3k 1.5×	2.2k 1.3×	324 0.4×	136	8.6k
Jinfeng Kang China	45	9.1k 1.3×	2.1k 0.9×	2.7k 1.2×	1.7k 1.0×	396 0.5×	331	9.8k
Matthew D. Pickett United States	32	7.8k 1.1×	1.6k 0.6×	3.3k 1.4×	1.7k 1.0×	260 0.3×	53	8.2k
Kyung Min Kim South Korea	38	6.4k 0.9×	1.4k 0.6×	2.5k 1.1×	1.7k 1.0×	154 0.2×	89	6.7k
Xiaobing Yan China	44	5.9k 0.8×	2.2k 0.9×	2.4k 1.1×	1.5k 0.9×	477 0.6×	196	7.2k
Jang‐Sik Lee South Korea	49	7.0k 1.0×	2.7k 1.1×	1.8k 0.8×	2.3k 1.4×	604 0.8×	163	8.1k
Guangdong Zhou China	43	4.5k 0.6×	919 0.4×	1.9k 0.8×	1.7k 1.0×	260 0.3×	157	5.3k
David Wei Zhang China	45	6.3k 0.9×	4.2k 1.7×	1.0k 0.4×	869 0.5×	1.0k 1.3×	281	8.2k
Qingqing Sun China	42	5.4k 0.8×	2.9k 1.2×	1.1k 0.5×	778 0.5×	373 0.5×	296	6.6k

Countries citing papers authored by Hangbing Lv

Since Specialization

Citations

This map shows the geographic impact of Hangbing Lv's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hangbing Lv with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hangbing Lv more than expected).

Fields of papers citing papers by Hangbing Lv

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hangbing Lv. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hangbing Lv. The network helps show where Hangbing Lv may publish in the future.

Co-authorship network of co-authors of Hangbing Lv

This figure shows the co-authorship network connecting the top 25 collaborators of Hangbing Lv. A scholar is included among the top collaborators of Hangbing Lv based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hangbing Lv. Hangbing Lv is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Lv, Hangbing, et al.. (2025). Kalman Filter-Based High-Accuracy Indoor Positioning With NLoS Error Mitigation and Multi-Motion Model Switching. IEEE Transactions on Vehicular Technology. 74(8). 12673–12688.

Xu, Feng, Min Zhang, Huanan Liu, et al.. (2025). A Physics-Based Compact Model for Ferroelectric/Antiferroelectric Mixed Phase Capacitor Incorporating Reliability Characteristics. IEEE Transactions on Electron Devices. 72(8). 4113–4122.

Li, Ningning, Xushen Han, Hangbing Lv, Yan Jin, & Jianguo Yu. (2024). Biodegradation of N-methyl-2-pyrrolidone (NMP) in wastewater: A review of current knowledge and future perspectives. Journal of Cleaner Production. 486. 144452–144452. 9 indexed citations

Luo, Qing, Chunmeng Dou, Hangbing Lv, et al.. (2023). A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. IEEE Journal of Solid-State Circuits. 59(1). 208–218. 13 indexed citations

Yang, Jianguo, Xiaoyong Xue, Xiaoxin Xu, et al.. (2020). A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm² using Sneaking Current Suppression and Compensation Techniques. 1–2. 16 indexed citations

Dong, Hang, Shibing Long, Haiding Sun, et al.. (2019). Fast Switching $\beta$ -Ga₂O₃Power MOSFET With a Trench-Gate Structure. IEEE Electron Device Letters. 40(9). 1385–1388. 58 indexed citations

Zhao, Xiaolong, Jiebin Niu, Yang Yang, et al.. (2019). Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application. Nanotechnology. 31(14). 144002–144002. 7 indexed citations

Cao, Rongrong, Qi Liu, Ming Liu, et al.. (2019). Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode. IEEE Electron Device Letters. 40(11). 1744–1747. 117 indexed citations

Luo, Qing, Xumeng Zhang, Jie Yu, et al.. (2019). Memory Switching and Threshold Switching in a 3D Nanoscaled NbO_X System. IEEE Electron Device Letters. 40(5). 718–721. 28 indexed citations

10.

Zhao, Xiaolong, Xumeng Zhang, Dashan Shang, et al.. (2019). Uniform, Fast, and Reliable Li_xSiO_y-Based Resistive Switching Memory. IEEE Electron Device Letters. 40(4). 554–557. 25 indexed citations

11.

Luo, Qing, Haili Ma, Kan‐Hao Xue, et al.. (2019). Composition-Dependent Ferroelectric Properties in Sputtered Hf_XZr_1−XO₂ Thin Films. IEEE Electron Device Letters. 40(4). 570–573. 41 indexed citations

12.

Zhao, Ying, Xumeng Zhang, Xiaoxin Xu, et al.. (2018). A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design. IEEE Transactions on Electron Devices. 65(10). 4290–4296. 24 indexed citations

13.

Banerjee, Writam, Nianduan Lu, Yang Yang, et al.. (2018). Investigation of Retention Behavior of TiO_x/Al₂O₃ Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule. IEEE Transactions on Electron Devices. 65(3). 957–962. 7 indexed citations

14.

Cao, Rongrong, Yan Wang, Shengjie Zhao, et al.. (2018). Effects of Capping Electrode on Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Thin Films. IEEE Electron Device Letters. 39(8). 1207–1210. 180 indexed citations

15.

Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2018). Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory. IEEE Electron Device Letters. 39(9). 1302–1305. 8 indexed citations

16.

Gong, Tiancheng, Qing Luo, Hangbing Lv, et al.. (2018). Unveiling the Switching Mechanism of a TaO_{<italic>x</italic>}/HfO₂ Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE Electron Device Letters. 39(8). 1152–1155. 9 indexed citations

17.

He, Qiming, Wenxiang Mu, Bo Fu, et al.. (2018). Schottky Barrier Rectifier Based on (100) $\beta$ -Ga₂O₃ and its DC and AC Characteristics. IEEE Electron Device Letters. 39(4). 556–559. 54 indexed citations

18.

Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2017). Uniformity and Retention Improvement of TaO_x-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering. IEEE Electron Device Letters. 38(9). 1232–1235. 13 indexed citations

19.

Zhang, Xumeng, Sen Liu, Xiaolong Zhao, et al.. (2017). Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor. IEEE Electron Device Letters. 38(9). 1208–1211. 156 indexed citations

20.

Zhang, Xumeng, Wei Wang, Qi Liu, et al.. (2017). An Artificial Neuron Based on a Threshold Switching Memristor. IEEE Electron Device Letters. 39(2). 308–311. 325 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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