Tsung‐Ming Tsai

3.9k citations

166 papers · 3.4k indexed · 1 hit paper · h-index 32

Electrical and Electronic Engineering top 1%
Polymers and Plastics top 1%
Materials Chemistry top 5%
Cellular and Molecular Neuroscience top 2%
Biomedical Engineering

Co-authors: Ting‐Chang Chang Kuan‐Chang Chang Tian-Jian Chu Simon M. Sze Yong-En Syu Min-Chen Chen Chih-Hung Pan Chih‐Cheng Shih
Topics: Advanced Memory and Neural Computing (97 papers)Semiconductor materials and devices (72 papers)Ferroelectric and Negative Capacitance Devices (70 papers)
Cited by: Polymers and Plastics Electrical and Electronic Engineering Cellular and Molecular Neuroscience
Journals: Applied Physics Letters Journal of Applied Physics ACS Applied Materials & Interfaces
Partner nations: Taiwan China United States

In The Last Decade

Tsung‐Ming Tsai

162 papers receiving 3.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Resistance random access memory

2015 419 citations Ting‐Chang Chang, Kuan‐Chang Chang et al. profile →

Peers

Countries citing papers authored by Tsung‐Ming Tsai

Since Specialization

Citations

This map shows the geographic impact of Tsung‐Ming Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsung‐Ming Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsung‐Ming Tsai more than expected).

Fields of papers citing papers by Tsung‐Ming Tsai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsung‐Ming Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsung‐Ming Tsai. The network helps show where Tsung‐Ming Tsai may publish in the future.

Co-authorship network of co-authors of Tsung‐Ming Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of Tsung‐Ming Tsai. A scholar is included among the top collaborators of Tsung‐Ming Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsung‐Ming Tsai. Tsung‐Ming Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors 2023 ·Advanced Electronic Materials ·(unknown),(unknown),Tsung‐Ming Tsai,Ting‐Chang Chang,(unknown),(unknown),(unknown),(unknown),Simon M. Sze	5
2	Abnormal Two-Stage Degradation on P-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Under Hot Carrier Conditions 2022 ·IEEE Electron Device Letters ·Hong‐Yi Tu,Ting‐Chang Chang,(unknown),Mao‐Chou Tai,(unknown),(unknown),(unknown),(unknown),Yu‐Lin Tsai,Tsung‐Ming Tsai,(unknown),(unknown)	6
3	Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs 2022 ·IEEE Transactions on Electron Devices ·(unknown),Po‐Hsun Chen,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Ju Zhou,(unknown),Yuxuan Wang,(unknown),Yuan Chen,(unknown),(unknown),Hong‐Yi Tu,(unknown),(unknown),(unknown),(unknown),Hui‐Chun Huang	3
4	Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al₂O₃/Si₃N₄ Gate Insulator Under Hot Switching 2022 ·IEEE Transactions on Electron Devices ·Peiyu Wu,(unknown),Ting‐Chang Chang,(unknown),(unknown),(unknown),Tsung‐Ming Tsai,Jen‐Wei Huang	3
5	Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta ₂ O ₅ -based electrolyte for all-solid-state electrochromic devices with enhanced performance 2022 ·Nanotechnology ·(unknown),Po‐Hsun Chen,Min-Chen Chen,(unknown),Chih-Cheng Yang,Hui‐Chun Huang,(unknown),(unknown),Tsung‐Ming Tsai,Ting‐Chang Chang	5
6	Abnormal Subthreshold Swing Decrease in a-InGaZnO Thin-Film Transistor After Self-Heating Stress 2022 ·IEEE Transactions on Electron Devices ·(unknown),Ting‐Chang Chang,Jianjie Chen,Kuan‐Ju Zhou,Tsung‐Ming Tsai	2
7	Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology 2021 ·Semiconductor Science and Technology ·Peiyu Wu,Min-Chen Chen,Ting‐Chang Chang,Haimei Zheng,(unknown),(unknown),(unknown),(unknown),Jen-Wei Huang,Kuo-Jen Chang,(unknown),Tsung‐Ming Tsai	2
8	Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors 2021 ·IEEE Electron Device Letters ·Chien-Hung Yeh,(unknown),(unknown),Ting‐Chang Chang,(unknown),Wen‐Chung Chen,(unknown),(unknown),(unknown),Wei‐Chun Hung,Jen-Wei Huang,Tsung‐Ming Tsai,Simon M. Sze	7
9	Performance Improvement by Modifying Deposition Temperature in HfZrO_x Ferroelectric Memory 2021 ·IEEE Transactions on Electron Devices ·Wen‐Chung Chen,(unknown),(unknown),(unknown),(unknown),(unknown),Chien-Hung Yeh,(unknown),(unknown),(unknown),Hui‐Chun Huang,Tsung‐Ming Tsai,Jen‐Wei Huang,Ting‐Chang Chang	8
10	Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing 2020 ·IEEE Electron Device Letters ·Peiyu Wu,Haimei Zheng,Chih‐Cheng Shih,Ting‐Chang Chang,(unknown),Chih-Cheng Yang,Wen‐Chung Chen,Mao‐Chou Tai,(unknown),Hui‐Chun Huang,Xiaohua Ma,Yue Hao,Tsung‐Ming Tsai,Simon M. Sze	20
11	Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress 2020 ·IEEE Transactions on Electron Devices ·Dong Lin,Wan-Ching Su,Ting‐Chang Chang,Hong-Chih Chen,(unknown),Jianwen Yang,Kuan‐Ju Zhou,(unknown),(unknown),Tsung‐Ming Tsai,Qun Zhang	12
12	Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors 2020 ·IEEE Transactions on Electron Devices ·(unknown),Mao‐Chou Tai,Ting‐Chang Chang,(unknown),Yuxuan Wang,Yu‐Lin Tsai,Hong‐Yi Tu,(unknown),Tsung‐Ming Tsai,Jen‐Wei Huang	4
13	Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory 2019 ·IEEE Transactions on Electron Devices ·(unknown),Po‐Hsun Chen,Min-Chen Chen,Ting‐Chang Chang,Chih‐Yang Lin,Haimei Zheng,(unknown),(unknown),Wen‐Chung Chen,Hui‐Chun Huang,Tsung‐Ming Tsai,Xiaohua Ma,Yue Hao,Simon M. Sze	7
14	Investigating the Back-Channel Effect and Asymmetric Degradation Under Self-Heating Stress in Large Size a-InGaZnO TFTs 2019 ·IEEE Electron Device Letters ·(unknown),Ting‐Chang Chang,Wan-Ching Su,(unknown),Hong-Chih Chen,(unknown),(unknown),(unknown),Tsung‐Ming Tsai,Shengdong Zhang	6
15	Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency 2018 ·IEEE Electron Device Letters ·Chih-Cheng Yang,(unknown),Po‐Hsun Chen,Yu‐Ting Su,Wan-Ching Su,(unknown),(unknown),Haimei Zheng,Hui‐Chun Huang,(unknown),(unknown),Jen‐Wei Huang,Tsung‐Ming Tsai,Ting‐Chang Chang	2
16	Role of H₂O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors 2017 ·IEEE Electron Device Letters ·Yu‐Chieh Chien,Ting‐Chang Chang,(unknown),Hua-Mao Chen,(unknown),Chih‐Cheng Shih,Bo‐Wei Chen,Po‐Yung Liao,(unknown),(unknown),Yu-Ju Hung,Tsung‐Ming Tsai,Kuan‐Chang Chang	22
17	Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications 2017 ·Applied Surface Science ·Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Chih‐Cheng Shih,(unknown),Chih-Cheng Yang,Wen‐Chung Chen,(unknown),Minghui Wang,Haimei Zheng,Min-Chen Chen,Simon M. Sze	19
18	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode 2017 ·Nanoscale ·Chih-Yang Lin,Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Shengdong Zhang,Tsung‐Ming Tsai,Chih-Hung Pan,Min-Chen Chen,Yu‐Ting Su,Yi‐Ting Tseng,Yao‐Feng Chang,Ying‐Chen Chen,Hui‐Chun Huang,Simon M. Sze	58
19	Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory 2016 ·IEEE Transactions on Electron Devices ·Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Chih‐Cheng Shih,(unknown),(unknown),Yu‐Ting Su,Chih‐Yang Lin,Yi‐Ting Tseng,Min-Chen Chen,Ruey‐Chi Wang,Ching‐Chich Leu,Kai-Huang Chen,Ikai Lo,Jin‐Cheng Zheng,Simon M. Sze	10
20	Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory 2016 ·IEEE Electron Device Letters ·Zhuorui Wang,Yu‐Ting Su,Yi Li,Yaxiong Zhou,Tian-Jian Chu,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Simon M. Sze,Xiangshui Miao	98

About Tsung‐Ming Tsai

Tsung‐Ming Tsai is a scholar working on Polymers and Plastics, Electrical and Electronic Engineering and Materials Chemistry, having authored 166 papers that have together received 3.4k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (97 papers), Semiconductor materials and devices (72 papers) and Ferroelectric and Negative Capacitance Devices (70 papers). The work is most often cited by research in Polymers and Plastics (993 citations), Electrical and Electronic Engineering (3.3k citations) and Cellular and Molecular Neuroscience (664 citations). Tsung‐Ming Tsai has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tian-Jian Chu, Simon M. Sze, Simon M. Sze, Yong-En Syu, Min-Chen Chen, Chih-Hung Pan, Chih‐Cheng Shih and Jung‐Hui Chen. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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