Tsung‐Ming Tsai

3.9k total citations · 1 hit paper
166 papers, 3.4k citations indexed

About

Tsung‐Ming Tsai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Tsung‐Ming Tsai has authored 166 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 158 papers in Electrical and Electronic Engineering, 50 papers in Materials Chemistry and 43 papers in Polymers and Plastics. Recurrent topics in Tsung‐Ming Tsai's work include Advanced Memory and Neural Computing (97 papers), Semiconductor materials and devices (72 papers) and Ferroelectric and Negative Capacitance Devices (70 papers). Tsung‐Ming Tsai is often cited by papers focused on Advanced Memory and Neural Computing (97 papers), Semiconductor materials and devices (72 papers) and Ferroelectric and Negative Capacitance Devices (70 papers). Tsung‐Ming Tsai collaborates with scholars based in Taiwan, China and United States. Tsung‐Ming Tsai's co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tian-Jian Chu, Simon M. Sze, Simon M. Sze, Yong-En Syu, Min-Chen Chen, Chih-Hung Pan, Chih‐Cheng Shih and Jung‐Hui Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Tsung‐Ming Tsai

162 papers receiving 3.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Resistance random access memory

2015 419 citations Ting‐Chang Chang, Kuan‐Chang Chang et al. profile →

Peers

Tsung‐Ming Tsai

EEE

CMN

Hyunsang Hwang South Korea

Seul Ji Song South Korea

Xiang‐Shu Li South Korea

Debashis Panda India

Chang Bum Lee South Korea

Minseok Jo South Korea

L. Goux Belgium

Umesh Chand Singapore

Xiaojuan Lian China

Changjung Kim South Korea

Hyunsang Hwang South Korea

Tsung‐Ming Tsai

2.9k ×0.9

EEE

943 ×0.9

926 ×0.9

538 ×0.8

CMN

86 ×0.8

Citations per year, relative to Tsung‐Ming Tsai Tsung‐Ming Tsai (= 1×) peers Hyunsang Hwang

Countries citing papers authored by Tsung‐Ming Tsai

Since Specialization

Citations

This map shows the geographic impact of Tsung‐Ming Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsung‐Ming Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsung‐Ming Tsai more than expected).

Fields of papers citing papers by Tsung‐Ming Tsai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsung‐Ming Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsung‐Ming Tsai. The network helps show where Tsung‐Ming Tsai may publish in the future.

Co-authorship network of co-authors of Tsung‐Ming Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of Tsung‐Ming Tsai. A scholar is included among the top collaborators of Tsung‐Ming Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsung‐Ming Tsai. Tsung‐Ming Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Tsai, Tsung‐Ming, et al.. (2023). Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors. Advanced Electronic Materials. 9(4). 5 indexed citations

Tu, Hong‐Yi, et al.. (2022). Abnormal Two-Stage Degradation on P-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Under Hot Carrier Conditions. IEEE Electron Device Letters. 43(5). 721–724. 6 indexed citations

Chen, Po‐Hsun, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2022). Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs. IEEE Transactions on Electron Devices. 69(5). 2423–2429. 3 indexed citations

Wu, Peiyu, et al.. (2022). Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al₂O₃/Si₃N₄ Gate Insulator Under Hot Switching. IEEE Transactions on Electron Devices. 69(8). 4218–4223. 3 indexed citations

Chen, Po‐Hsun, Min-Chen Chen, Chih-Cheng Yang, et al.. (2022). Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta ₂ O ₅ -based electrolyte for all-solid-state electrochromic devices with enhanced performance. Nanotechnology. 33(27). 275711–275711. 5 indexed citations

Chang, Ting‐Chang, et al.. (2022). Abnormal Subthreshold Swing Decrease in a-InGaZnO Thin-Film Transistor After Self-Heating Stress. IEEE Transactions on Electron Devices. 69(12). 6789–6793. 2 indexed citations

Wu, Peiyu, Min-Chen Chen, Ting‐Chang Chang, et al.. (2021). Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. Semiconductor Science and Technology. 36(8). 85005–85005. 2 indexed citations

Yeh, Chien-Hung, Ting‐Chang Chang, Wen‐Chung Chen, et al.. (2021). Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors. IEEE Electron Device Letters. 42(3). 315–318. 7 indexed citations

Chen, Wen‐Chung, Chien-Hung Yeh, Hui‐Chun Huang, et al.. (2021). Performance Improvement by Modifying Deposition Temperature in HfZrO_x Ferroelectric Memory. IEEE Transactions on Electron Devices. 68(8). 3838–3842. 8 indexed citations

10.

Wu, Peiyu, Haimei Zheng, Chih‐Cheng Shih, et al.. (2020). Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing. IEEE Electron Device Letters. 41(3). 357–360. 20 indexed citations

11.

Lin, Dong, Wan-Ching Su, Ting‐Chang Chang, et al.. (2020). Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress. IEEE Transactions on Electron Devices. 67(6). 2372–2375. 12 indexed citations

12.

Tai, Mao‐Chou, Ting‐Chang Chang, Yuxuan Wang, et al.. (2020). Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors. IEEE Transactions on Electron Devices. 67(9). 3645–3649. 4 indexed citations

13.

Chen, Po‐Hsun, Min-Chen Chen, Ting‐Chang Chang, et al.. (2019). Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory. IEEE Transactions on Electron Devices. 66(6). 2595–2599. 7 indexed citations

14.

Chang, Ting‐Chang, et al.. (2019). Investigating the Back-Channel Effect and Asymmetric Degradation Under Self-Heating Stress in Large Size a-InGaZnO TFTs. IEEE Electron Device Letters. 41(1). 58–61. 6 indexed citations

15.

Yang, Chih-Cheng, Po‐Hsun Chen, Yu‐Ting Su, et al.. (2018). Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency. IEEE Electron Device Letters. 39(7). 983–986. 2 indexed citations

16.

Chien, Yu‐Chieh, Ting‐Chang Chang, Hua-Mao Chen, et al.. (2017). Role of H₂O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors. IEEE Electron Device Letters. 38(4). 469–472. 22 indexed citations

17.

Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2017). Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications. Applied Surface Science. 414. 224–229. 19 indexed citations

18.

Lin, Chih-Yang, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2017). Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode. Nanoscale. 9(25). 8586–8590. 58 indexed citations

19.

Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2016). Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory. IEEE Transactions on Electron Devices. 63(12). 4769–4775. 10 indexed citations

20.

Wang, Zhuorui, Yu‐Ting Su, Yi Li, et al.. (2016). Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory. IEEE Electron Device Letters. 38(2). 179–182. 98 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact