Wei-Su Chen

719 total citations
39 papers, 612 citations indexed

About

Wei-Su Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Wei-Su Chen has authored 39 papers receiving a total of 612 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 5 papers in Polymers and Plastics. Recurrent topics in Wei-Su Chen's work include Advanced Memory and Neural Computing (28 papers), Ferroelectric and Negative Capacitance Devices (27 papers) and Semiconductor materials and devices (12 papers). Wei-Su Chen is often cited by papers focused on Advanced Memory and Neural Computing (28 papers), Ferroelectric and Negative Capacitance Devices (27 papers) and Semiconductor materials and devices (12 papers). Wei-Su Chen collaborates with scholars based in Taiwan, United States and China. Wei-Su Chen's co-authors include Ming‐Jinn Tsai, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Frederick T. Chen, S. Z. Rahaman, S. Maikap, Pei-Yi Gu, Ming‐Jer Kao and Chen-Han Tsai and has published in prestigious journals such as Applied Physics Letters, Langmuir and Nanotechnology.

In The Last Decade

Wei-Su Chen

38 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wei-Su Chen Taiwan 15 594 163 138 131 16 39 612
Chen-Hsi Lin Taiwan 11 553 0.9× 109 0.7× 201 1.5× 155 1.2× 27 1.7× 19 585
C. Gopalan United States 10 633 1.1× 152 0.9× 203 1.5× 185 1.4× 18 1.1× 13 660
Jiun-Jia Huang Taiwan 10 529 0.9× 112 0.7× 101 0.7× 103 0.8× 11 0.7× 19 541
M. Balakrishnan United States 7 452 0.8× 110 0.7× 162 1.2× 151 1.2× 17 1.1× 11 474
Qingyun Zuo China 9 871 1.5× 214 1.3× 212 1.5× 259 2.0× 12 0.8× 24 877
K. Tsunoda Japan 7 597 1.0× 120 0.7× 146 1.1× 197 1.5× 13 0.8× 17 613
X. A. Tran Singapore 15 606 1.0× 132 0.8× 168 1.2× 127 1.0× 5 0.3× 21 620
B. S. Kang South Korea 8 637 1.1× 140 0.9× 184 1.3× 247 1.9× 21 1.3× 11 686
Naoki Banno Japan 15 941 1.6× 269 1.7× 160 1.2× 151 1.2× 13 0.8× 63 956
Pengxiao Sun China 10 396 0.7× 104 0.6× 111 0.8× 122 0.9× 8 0.5× 17 451

Countries citing papers authored by Wei-Su Chen

Since Specialization
Citations

This map shows the geographic impact of Wei-Su Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei-Su Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei-Su Chen more than expected).

Fields of papers citing papers by Wei-Su Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei-Su Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei-Su Chen. The network helps show where Wei-Su Chen may publish in the future.

Co-authorship network of co-authors of Wei-Su Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Wei-Su Chen. A scholar is included among the top collaborators of Wei-Su Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wei-Su Chen. Wei-Su Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rahaman, S. Z., Yu-De Lin, Heng-Yuan Lee, et al.. (2017). The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories. Langmuir. 33(19). 4654–4665. 53 indexed citations
2.
Lin, Yu-De, Pang-Shiu Chen, Heng-Yuan Lee, et al.. (2017). Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics. Nanoscale Research Letters. 12(1). 21 indexed citations
3.
Rahaman, S. Z., Heng-Yuan Lee, Yu-Sheng Chen, et al.. (2017). Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution. Applied Physics Letters. 110(21). 23 indexed citations
4.
Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2014). Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current. IEEE Electron Device Letters. 35(2). 202–204. 51 indexed citations
5.
Chang, Wen-Yuan, et al.. (2013). Polarity Reversion of the Operation Mode of HfO<SUB>2</SUB>-Based Resistive Random Access Memory Devices by Inserting Hf Metal Layer. Journal of Nanoscience and Nanotechnology. 13(3). 1733–1737. 5 indexed citations
6.
Chen, F. T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2013). Resistance instabilities in a filament-based resistive memory. 5E.1.1–5E.1.7. 10 indexed citations
7.
Rahaman, S. Z., S. Maikap, Atanu Das, et al.. (2012). Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. Nanoscale Research Letters. 7(1). 614–614. 28 indexed citations
8.
Rahaman, S. Z., S. Maikap, Ta–Chang Tien, et al.. (2012). Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. Nanoscale Research Letters. 7(1). 345–345. 71 indexed citations
9.
Chen, Pang-Shiu, Yu-Sheng Chen, Heng-Yuan Lee, et al.. (2012). Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices. Microelectronic Engineering. 105. 40–45. 5 indexed citations
10.
Banerjee, Writam, S. Maikap, Chao‐Sung Lai, et al.. (2012). Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots. Nanoscale Research Letters. 7(1). 194–194. 48 indexed citations
11.
Jana, Debanjan, S. Maikap, Wei-Su Chen, et al.. (2012). Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD17–04DD17. 12 indexed citations
12.
Zhang, Lijie, Frederick T. Chen, Heng-Yuan Lee, et al.. (2011). Experimental investigation of the reliability issue of RRAM based on high resistance state conduction. Nanotechnology. 22(25). 254016–254016. 30 indexed citations
13.
Chen, Yu-Sheng, Heng-Yuan Lee, Pang-Shiu Chen, et al.. (2011). Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer. IEEE Electron Device Letters. 32(3). 390–392. 30 indexed citations
14.
Zhang, Lijie, Ru Huang, Frederick T. Chen, et al.. (2011). Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM. MY.8.1–MY.8.5. 15 indexed citations
15.
Chen, Frederick T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2011). Resistance switching for RRAM applications. Science China Information Sciences. 54(5). 1073–1086. 27 indexed citations
16.
Chen, Wei-Su, Pei-Yi Gu, & Ming‐Jinn Tsai. (2010). Dependence of 20-nm C/H CD windows on critical process parameters. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7639. 76390Y–76390Y. 1 indexed citations
17.
Lee, Heng-Yuan, Yu-Sheng Chen, Pang-Shiu Chen, et al.. (2010). Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer. 132–133. 17 indexed citations
18.
Lee, Chain‐Ming, Der-Sheng Chao, Wenhan Wang, et al.. (2007). Performances of GeSnSbTe Material for High-Speed Phase Change Memory. 1–2. 2 indexed citations
19.
Chao, Der-Sheng, Fred K. Chen, Chain‐Ming Lee, et al.. (2007). Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure. 1–2. 3 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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