Wei-Su Chen

719 citations

39 papers · 612 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials

Papers in ⓘ

Electrical and Electronic Engineering 39
- Advanced Memory and Neural Computing 28
- Ferroelectric and Negative Capacitance Devices 27
- Semiconductor materials and devices 12
- Advancements in Photolithography Techniques 6
Materials Chemistry 16
- Electronic and Structural Properties of Oxides 9
- Phase-change materials and chalcogenides 5

Co-authors: Ming‐Jinn Tsai (35 shared papers)Heng-Yuan Lee (24 shared papers)Pang-Shiu Chen (15 shared papers)Yu-Sheng Chen (15 shared papers)S. Z. Rahaman (11 shared papers)Frederick T. Chen (17 shared papers)Pei-Yi Gu (14 shared papers)S. Maikap (8 shared papers)
Journals: Japanese Journal of Applied Physics (5 papers)IEEE Electron Device Letters (4 papers)Nanoscale Research Letters (4 papers)Microelectronic Engineering (1 paper)Science China Information Sciences (1 paper)
Partner nations: Taiwan United States China

In The Last Decade

Wei-Su Chen

38 papers receiving 595 citations

Peers

Countries citing papers authored by Wei-Su Chen

Since Specialization

Citations

This map shows the geographic impact of Wei-Su Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei-Su Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei-Su Chen more than expected).

Fields of papers citing papers by Wei-Su Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei-Su Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei-Su Chen. The network helps show where Wei-Su Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside Wei-Su Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Wei-Su Chen Line = papers co-authored together Wei-Su Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface Nanoscale Research Letters ·S. Z. Rahaman, S. Maikap, Ta–Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T. Chen, Ming‐Jer Kao, Ming‐Jinn Tsai	2012	71
2	The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories Langmuir ·S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, Wei-Su Chen, Chien-Hua Hsu, Kan-Hsueh Tsai, Ming‐Jinn Tsai, Peihua Wang	2017	53
3	Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current IEEE Electron Device Letters ·Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wei-Su Chen, Kan-Hsueh Tsai, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, S. Z. Rahaman, Yu-De Lin, Frederick Chen, Ming‐Jinn Tsai, Tzu-Kun Ku	2014	51
4	Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot IEEE Electron Device Letters ·Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Sum-Min Wang, Pei-Yi Gu, Yen-Ya Hsu, Chen-Han Tsai, Wei-Su Chen, Frederick Chen, Ming‐Jinn Tsai, Chenhsin Lien	2011	51
5	Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots Nanoscale Research Letters ·Writam Banerjee, S. Maikap, Chao‐Sung Lai, Yiyan Chen, Ta–Chang Tien, Heng-Yuan Lee, Wei-Su Chen, Frederick T. Chen, Ming‐Jer Kao, Ming‐Jinn Tsai, Jer‐Ren Yang	2012	48
6	Experimental investigation of the reliability issue of RRAM based on high resistance state conduction Nanotechnology ·Lijie Zhang, Yen-Ya Hsu, Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Wen-Hsing Liu, Shunmin Wang, Chen-Han Tsai, Ru Huang, Ming‐Jinn Tsai	2011	30
7	Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer IEEE Electron Device Letters ·Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Pei-Yi Gu, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Chen-Han Tsai, Frederick Chen, Ming‐Jinn Tsai, Chenhsin Lien	2011	30
8	Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte Nanoscale Research Letters ·S. Z. Rahaman, S. Maikap, Atanu Das, Amit Prakash, Ya Hsuan Wu, Chao‐Sung Lai, Ta–Chang Tien, Wei-Su Chen, Heng-Yuan Lee, Frederick T. Chen, Ming‐Jinn Tsai, Liann‐Be Chang	2012	28
9	Resistance switching for RRAM applications Science China Information Sciences ·Frederick T. Chen, Heng-Yuan Lee, Yu‐Sheng Chen, Yen-Ya Hsu, Lijie Zhang, Pang-Shiu Chen, Wei-Su Chen, Pei-Yi Gu, Wen-Hsing Liu, Sumin Wang, Chen-Han Tsai, Shyh-Shyuan Sheu, Ming‐Jinn Tsai, Ru Huang	2011	27
10	Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution Applied Physics Letters ·S. Z. Rahaman, Heng-Yuan Lee, Yu-Sheng Chen, Yu-De Lin, Pang-Shiu Chen, Wei-Su Chen, Peihua Wang	2017	23
11	Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics Nanoscale Research Letters ·Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, S. Z. Rahaman, Kan-Hsueh Tsai, Chien-Hua Hsu, Wei-Su Chen, Peihua Wang, Ya‐Chin King, Chrong Jung Lin	2017	21
12	Device Size-Dependent Improved Resistive Switching Memory Performance IEEE Transactions on Nanotechnology ·Amit Prakash, S. Maikap, Wei-Su Chen, Heng-Yuan Lee, Fred K. Chen, Ta–Chang Tien, Chao‐Sung Lai, Ming‐Jinn Tsai	2013	21
13	Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure IEEE Electron Device Letters ·Der-Sheng Chao, Yi-Chan Chen, Fred K. Chen, Ming-Jung Chen, Philip H. Yen, Chain‐Ming Lee, Wei-Su Chen, Chenhsin Lien, Ming‐Jer Kao, Ming‐Jinn Tsai	2007	18
14	Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, Pei-Yi Gu, Yen-Ya Hsu, Wen‐Hsin Liu, Wei-Su Chen, Chen Han Tsai, Frederick Chen, Chenhsin Lien, Ming‐Jinn Tsai	2010	17
15	Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM Lijie Zhang, Ru Huang, Yen-Ya Hsu, Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Wen-Hsing Liu, Shunmin Wang, Chen-Han Tsai, Ming‐Jinn Tsai, Pang-Shiu Chen	2011	15
16	Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM Pei-Yi Gu, Yu‐Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen, Wen-Hsing Liu, Wei-Su Chen, Yen-Ya Hsu, Frederick Chen, Ming‐Jinn Tsai	2010	13
17	Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrO_x/GdO_x/WO_x/W Structure Japanese Journal of Applied Physics ·Debanjan Jana, S. Maikap, Ta Chang Tien, Heng Yuan Lee, Wei-Su Chen, Frederick T. Chen, Ming‐Jer Kao, Ming‐Jinn Tsai	2012	12
18	Size dependence of TiN/HfO2/Ti MIM ReRAM resistance states: Model and experimental results Current Applied Physics ·Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, Peggy Gu, Chi‐Wei Chen, Yen-Ya Hsu, Wen-Hsing Liu, Wei-Su Chen, Ming‐Jinn Tsai, Shen‐Chuan Lo, Ming-Wei Lai	2009	11
19	Resistance instabilities in a filament-based resistive memory F. T. Chen, Heng-Yuan Lee, Yu‐Sheng Chen, S. Z. Rahaman, Chen-Han Tsai, Kan-Hsueh Tsai, Tai-Yuan Wu, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin, Shyh-Shyuan Sheu, Ming‐Jinn Tsai, Li-Heng Lee, Tzu-Kun Ku, Pang-Shiu Chen	2013	10
20	Impact of compliance current overshoot on high resistance state, memory performance, and device yield of HfO<inf>x</inf> based resistive memory and its solution Yu-Sheng Chen, Wen-Hsing Liu, Heng-Yuan Lee, Pang-Shiu Chen, Sum-Min Wang, Chen-Han Tsai, Yen-Ya Hsu, Pei-Yi Gu, Wei-Su Chen, Frederick Chen, Chenhsin Lien, Ming‐Jinn Tsai	2011	9

About Wei-Su Chen

Wei-Su Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 39 papers that have together received 612 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (28 papers), Ferroelectric and Negative Capacitance Devices (27 papers), Semiconductor materials and devices (12 papers), Electronic and Structural Properties of Oxides (9 papers), Advancements in Photolithography Techniques (6 papers), Transition Metal Oxide Nanomaterials (5 papers), Advanced Surface Polishing Techniques (5 papers) and Phase-change materials and chalcogenides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (594 citations), Polymers and Plastics (131 citations), Cellular and Molecular Neuroscience (163 citations), Materials Chemistry (138 citations) and Hardware and Architecture (15 citations). Wei-Su Chen has collaborated with scholars based in Taiwan, United States and China. Frequent co-authors include Ming‐Jinn Tsai, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, S. Z. Rahaman, Frederick T. Chen, Pei-Yi Gu, S. Maikap, Ming‐Jer Kao and Chen-Han Tsai. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters, Nanoscale Research Letters, Microelectronic Engineering and Science China Information Sciences.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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