Kai-Huang Chen

1.1k total citations
78 papers, 948 citations indexed

About

Kai-Huang Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Kai-Huang Chen has authored 78 papers receiving a total of 948 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 49 papers in Materials Chemistry and 25 papers in Polymers and Plastics. Recurrent topics in Kai-Huang Chen's work include Advanced Memory and Neural Computing (44 papers), Ferroelectric and Piezoelectric Materials (33 papers) and Transition Metal Oxide Nanomaterials (25 papers). Kai-Huang Chen is often cited by papers focused on Advanced Memory and Neural Computing (44 papers), Ferroelectric and Piezoelectric Materials (33 papers) and Transition Metal Oxide Nanomaterials (25 papers). Kai-Huang Chen collaborates with scholars based in Taiwan, China and United States. Kai-Huang Chen's co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Jung‐Hui Chen, Tai-Fa Young, Yong-En Syu, Cheng‐Fu Yang, Ying-Chung Chen, Simon M. Sze and Chih‐Cheng Shih and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Kai-Huang Chen

74 papers receiving 939 citations

Peers

Kai-Huang Chen
Chih‐Cheng Shih Taiwan
Ji‐Hyun Hur South Korea
Soo Gil Kim South Korea
Ilona Skorupa Germany
Jamal Aziz South Korea
Amitesh Kumar India
B. P. Andreasson Switzerland
Yong-En Syu Taiwan
Jin Hyeok Lee South Korea
J.T. Moon South Korea
Chih‐Cheng Shih Taiwan
Kai-Huang Chen
Citations per year, relative to Kai-Huang Chen Kai-Huang Chen (= 1×) peers Chih‐Cheng Shih

Countries citing papers authored by Kai-Huang Chen

Since Specialization
Citations

This map shows the geographic impact of Kai-Huang Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai-Huang Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai-Huang Chen more than expected).

Fields of papers citing papers by Kai-Huang Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kai-Huang Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai-Huang Chen. The network helps show where Kai-Huang Chen may publish in the future.

Co-authorship network of co-authors of Kai-Huang Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Kai-Huang Chen. A scholar is included among the top collaborators of Kai-Huang Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kai-Huang Chen. Kai-Huang Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Chen, Kai-Huang, et al.. (2024). Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices. Micromachines. 15(9). 1143–1143. 1 indexed citations
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Chen, Kai-Huang, et al.. (2023). Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories. Nanomaterials. 13(4). 688–688. 4 indexed citations
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Chen, Kai-Huang, et al.. (2018). Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology. Sensors and Materials. 933–933. 5 indexed citations
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Chen, Meili, et al.. (2017). Performance Improvement of LiF/ZnO Codoped Lead-Free Piezoelectric Ceramics. Sensors and Materials. 411–411.
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Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2016). Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory. IEEE Transactions on Electron Devices. 63(12). 4769–4775. 10 indexed citations
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Chen, Kai-Huang, Kuan‐Chang Chang, Ting‐Chang Chang, et al.. (2016). Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode. Nanoscale Research Letters. 11(1). 224–224. 11 indexed citations
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Chang, Kuan‐Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, et al.. (2015). Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid. IEEE Electron Device Letters. 36(6). 558–560. 25 indexed citations
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Chen, Yi‐Jiun, Hsin-Lu Chen, Tai-Fa Young, et al.. (2014). Hydrogen induced redox mechanism in amorphous carbon resistive random access memory. Nanoscale Research Letters. 9(1). 52–52. 30 indexed citations
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Chen, Yi‐Jiun, Jen-Chung Lou, Kai-Huang Chen, et al.. (2014). Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor. IEEE Electron Device Letters. 35(10). 1016–1018. 44 indexed citations
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Chang, Kuan‐Chang, Jen‐Wei Huang, Ting‐Chang Chang, et al.. (2013). Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer. Nanoscale Research Letters. 8(1). 523–523. 15 indexed citations
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Zhang, Rui, Kuan‐Chang Chang, Ting‐Chang Chang, et al.. (2013). High performance of graphene oxide-doped silicon oxide-based resistance random access memory. Nanoscale Research Letters. 8(1). 497–497. 18 indexed citations
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Cheng, Chien‐Min, et al.. (2012). Influence of Lithium and Potassium Doping on Structure and Electrical Characteristics of Lix(KyNa1-y)1-x(Nb0.9Ta0.06Sb0.04)O3 Lead-Free Piezoelectric Ceramics. Japanese Journal of Applied Physics. 51(3R). 35801–35801. 1 indexed citations
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Tzou, Wen‐Cheng, et al.. (2009). Memory Properties of SrBi 2 Ta 2 O 9 Ferroelectric Thin Film Prepared on SiO 2 /Si Substrate. Ferroelectrics. 385(1). 654–61. 1 indexed citations
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Yang, Cheng‐Fu, Kai-Huang Chen, Ying-Chung Chen, & Ting‐Chang Chang. (2007). Fabrication of One-Transistor-Capacitor Structure of Nonvolatile TFT Ferroelectric RAM Devices Using Ba(Zr 0.1Ti 0.9)O 3 Gated Oxide Film. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 54(9). 1726–1730. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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