Geng-Wei Chang

463 total citations
14 papers, 390 citations indexed

About

Geng-Wei Chang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Geng-Wei Chang has authored 14 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Geng-Wei Chang's work include Semiconductor materials and devices (8 papers), Advanced Memory and Neural Computing (7 papers) and Thin-Film Transistor Technologies (6 papers). Geng-Wei Chang is often cited by papers focused on Semiconductor materials and devices (8 papers), Advanced Memory and Neural Computing (7 papers) and Thin-Film Transistor Technologies (6 papers). Geng-Wei Chang collaborates with scholars based in Taiwan, China and United States. Geng-Wei Chang's co-authors include Yong-En Syu, Ting‐Chang Chang, Ya‐Hsiang Tai, Kuan‐Chang Chang, Tsung‐Ming Tsai, Min-Chen Chen, Fu-Yen Jian, Ya-Chi Hung, Yu‐Ting Su and Jianyu Chen and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Geng-Wei Chang

14 papers receiving 383 citations

Peers

Geng-Wei Chang

EEE

CMN

Ya-Chi Hung Taiwan

Wen-Yueh Jang Taiwan

Yukio Tamai Japan

Dai-Ying Lee Taiwan

Eszter Piros Germany

Hsin-Lu Chen China

Tai-Yuan Wu Taiwan

Tiangui You China

Chun‐An Lin Taiwan

D. J. Seong South Korea

Ya-Chi Hung Taiwan

Geng-Wei Chang

491 ×1.3

EEE

154 ×1.1

120 ×1.1

99 ×1.7

CMN

7 ×0.9

Citations per year, relative to Geng-Wei Chang Geng-Wei Chang (= 1×) peers Ya-Chi Hung

Countries citing papers authored by Geng-Wei Chang

Since Specialization

Citations

This map shows the geographic impact of Geng-Wei Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geng-Wei Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geng-Wei Chang more than expected).

Fields of papers citing papers by Geng-Wei Chang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geng-Wei Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geng-Wei Chang. The network helps show where Geng-Wei Chang may publish in the future.

Co-authorship network of co-authors of Geng-Wei Chang

This figure shows the co-authorship network connecting the top 25 collaborators of Geng-Wei Chang. A scholar is included among the top collaborators of Geng-Wei Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geng-Wei Chang. Geng-Wei Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Hu, Jin, et al.. (2024). Cyclotriphosphazene-based crosslinked networks with tunable thermal, mechanical, and flame-retardant properties. Journal of the Taiwan Institute of Chemical Engineers. 168. 105898–105898. 3 indexed citations

Chang, Geng-Wei, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2014). Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 61(6). 2119–2124. 34 indexed citations

Chang, Kuan‐Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, et al.. (2013). Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory. IEEE Electron Device Letters. 34(3). 399–401. 58 indexed citations

Chang, Ting‐Chang, Geng-Wei Chang, Tsung‐Ming Tsai, et al.. (2013). N₂O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. ECS Transactions. 45(31). 47–55. 1 indexed citations

Chu, Tian-Jian, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2013). Charge Quantity Influence on Resistance Switching Characteristic During Forming Process. IEEE Electron Device Letters. 34(4). 502–504. 55 indexed citations

Chang, Kuan‐Chang, Rui Zhang, Ting‐Chang Chang, et al.. (2013). Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices. IEEE Electron Device Letters. 34(5). 677–679. 55 indexed citations

Tsai, Tsung‐Ming, Kuan‐Chang Chang, Ting‐Chang Chang, et al.. (2012). Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications. IEEE Electron Device Letters. 33(12). 1696–1698. 45 indexed citations

Chang, Yao‐Feng, et al.. (2012). Study of Resistive Switching Characteristics on a Temperature-Sensitive FeO_x-Transition Layer in a TiN/SiO₂/FeO_x/Fe Structure. ECS Journal of Solid State Science and Technology. 1(5). Q91–Q95. 6 indexed citations

Tsai, Tsung‐Ming, Hui‐Chun Huang, Ya‐Hsiang Tai, et al.. (2012). Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment. IEEE Electron Device Letters. 33(12). 1693–1695. 47 indexed citations

10.

Chang, Geng-Wei, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2012). Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress. Applied Physics Letters. 100(18). 36 indexed citations

11.

Chang, Geng-Wei, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2012). Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors. IEEE Electron Device Letters. 33(4). 540–542. 13 indexed citations

12.

Syu, Yong-En, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2012). Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device. IEEE Electron Device Letters. 33(3). 342–344. 30 indexed citations

13.

Chang, Ting‐Chang, Geng-Wei Chang, Chia-Sheng Lin, et al.. (2011). Effect of Lateral Body Terminal on Silicon–Oxide–Nitride–Oxide–Silicon Thin-Film Transistors. IEEE Electron Device Letters. 32(10). 1394–1396. 2 indexed citations

14.

Chang, Geng-Wei, Ting‐Chang Chang, Yong-En Syu, Ya‐Hsiang Tai, & Fu-Yen Jian. (2011). On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure. IEEE Electron Device Letters. 32(8). 1038–1040. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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