Frederick T. Chen

1.5k total citations
38 papers, 999 citations indexed

About

Frederick T. Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Frederick T. Chen has authored 38 papers receiving a total of 999 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 6 papers in Polymers and Plastics. Recurrent topics in Frederick T. Chen's work include Advanced Memory and Neural Computing (32 papers), Ferroelectric and Negative Capacitance Devices (30 papers) and Semiconductor materials and devices (19 papers). Frederick T. Chen is often cited by papers focused on Advanced Memory and Neural Computing (32 papers), Ferroelectric and Negative Capacitance Devices (30 papers) and Semiconductor materials and devices (19 papers). Frederick T. Chen collaborates with scholars based in Taiwan, United States and China. Frederick T. Chen's co-authors include Ming‐Jinn Tsai, Heng-Yuan Lee, Ming‐Jer Kao, Shyh-Shyuan Sheu, Wei-Su Chen, Cheng‐Wen Wu, Ching‐Yi Chen, Meng‐Fan Chang, Keng-Li Su and S. Maikap and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Scripta Materialia and IEEE Transactions on Electron Devices.

In The Last Decade

Frederick T. Chen

37 papers receiving 972 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Frederick T. Chen Taiwan 18 959 213 142 129 74 38 999
Takumi Mikawa Japan 16 993 1.0× 212 1.0× 167 1.2× 145 1.1× 72 1.0× 33 1.1k
Sity Lam United States 11 801 0.8× 215 1.0× 130 0.9× 82 0.6× 43 0.6× 21 895
Yimao Cai China 20 1.1k 1.2× 359 1.7× 154 1.1× 160 1.2× 45 0.6× 109 1.2k
Zhiqiang Wei Japan 16 630 0.7× 149 0.7× 105 0.7× 126 1.0× 72 1.0× 42 680
Stefan Cosemans Belgium 20 1.1k 1.1× 85 0.4× 94 0.7× 95 0.7× 108 1.5× 83 1.1k
Chrong Jung Lin Taiwan 17 1.0k 1.0× 88 0.4× 99 0.7× 62 0.5× 94 1.3× 106 1.1k
Rashmi Jha United States 14 689 0.7× 169 0.8× 113 0.8× 78 0.6× 48 0.6× 93 772
Jianguo Yang China 14 507 0.5× 125 0.6× 133 0.9× 51 0.4× 59 0.8× 59 638
Furqan Zahoor India 13 1.0k 1.1× 201 0.9× 198 1.4× 206 1.6× 43 0.6× 37 1.1k

Countries citing papers authored by Frederick T. Chen

Since Specialization
Citations

This map shows the geographic impact of Frederick T. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frederick T. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frederick T. Chen more than expected).

Fields of papers citing papers by Frederick T. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frederick T. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frederick T. Chen. The network helps show where Frederick T. Chen may publish in the future.

Co-authorship network of co-authors of Frederick T. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Frederick T. Chen. A scholar is included among the top collaborators of Frederick T. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Frederick T. Chen. Frederick T. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Frederick T., Yu-Sheng Chen, Tai-Yuan Wu, & Tzu-Kun Ku. (2014). Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture. IEEE Electron Device Letters. 35(2). 223–225. 11 indexed citations
2.
Chen, Frederick T.. (2014). Model of current-limited negative differential resistance in oxide-based resistance-switching devices. Solid-State Electronics. 103. 59–63. 1 indexed citations
3.
Sheu, Shyh-Shyuan, Chia-Chen Kuo, Meng‐Fan Chang, et al.. (2013). A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application. 245–248. 42 indexed citations
4.
King, Ya‐Chin, et al.. (2013). 28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes. IEEE Electron Device Letters. 34(10). 1253–1255. 19 indexed citations
5.
Chang, Meng‐Fan, Shyh-Shyuan Sheu, Ku-Feng Lin, et al.. (2013). A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes. IEEE Journal of Solid-State Circuits. 48(3). 878–891. 78 indexed citations
6.
Chang, Meng‐Fan, Shyh-Shyuan Sheu, Chorng-Jung Lin, et al.. (2013). Area-efficient embedded RRAM macros with sub-5ns random-read-access-time using logic-process parasitic-BJT-switch (0T1R) cell and read-disturb-free temperature-aware current-mode read scheme. 2 indexed citations
7.
Rahaman, S. Z., S. Maikap, Atanu Das, et al.. (2012). Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. Nanoscale Research Letters. 7(1). 614–614. 28 indexed citations
8.
Rahaman, S. Z., S. Maikap, Ta–Chang Tien, et al.. (2012). Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. Nanoscale Research Letters. 7(1). 345–345. 71 indexed citations
9.
Prakash, Amit, S. Maikap, Chao‐Sung Lai, et al.. (2012). Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD06–04DD06. 9 indexed citations
10.
Chang, Meng‐Fan, Ku-Feng Lin, Shyh-Shyuan Sheu, et al.. (2012). Circuit design challenges and trends in read sensing schemes for resistive-type emerging nonvolatile memory. 1–4. 6 indexed citations
11.
Prakash, Amit, S. Maikap, Chao‐Sung Lai, et al.. (2012). Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD06–04DD06. 13 indexed citations
12.
Banerjee, Writam, S. Maikap, Chao‐Sung Lai, et al.. (2012). Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots. Nanoscale Research Letters. 7(1). 194–194. 48 indexed citations
13.
Jana, Debanjan, S. Maikap, Wei-Su Chen, et al.. (2012). Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure. Japanese Journal of Applied Physics. 51(4S). 04DD17–04DD17. 12 indexed citations
14.
Zhang, Lijie, Frederick T. Chen, Heng-Yuan Lee, et al.. (2011). Experimental investigation of the reliability issue of RRAM based on high resistance state conduction. Nanotechnology. 22(25). 254016–254016. 30 indexed citations
15.
Zhang, Lijie, Ru Huang, Frederick T. Chen, et al.. (2011). Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM. MY.8.1–MY.8.5. 15 indexed citations
16.
Chen, Frederick T., Heng-Yuan Lee, Yu‐Sheng Chen, et al.. (2011). Resistance switching for RRAM applications. Science China Information Sciences. 54(5). 1073–1086. 27 indexed citations
17.
Wang, Ching-Hua, Meng‐Fan Chang, Ya‐Chin King, et al.. (2011). Three-Dimensional $\hbox{4F}^{2}$ ReRAM With Vertical BJT Driver by CMOS Logic Compatible Process. IEEE Transactions on Electron Devices. 58(8). 2466–2472. 24 indexed citations
18.
Chiu, Pi-Feng, Meng‐Fan Chang, Shyh-Shyuan Sheu, et al.. (2010). A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications. 229–230. 35 indexed citations
19.
Chao, Der-Sheng, Frederick T. Chen, Chain‐Ming Lee, et al.. (2009). Multi-level phase change memory using slow-quench operation: GST vs. GSST. 39–40. 2 indexed citations
20.
Chen, Frederick T.. (1991). A personal computer based expert system framework for the design of experiments. Computers & Industrial Engineering. 21(1-4). 197–200. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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