Yong-En Syu

1.6k citations

44 papers · 1.4k indexed · h-index 23

Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials 9
Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing 35
- Ferroelectric and Negative Capacitance Devices 26
- Semiconductor materials and devices 21
- Thin-Film Transistor Technologies 6
Cellular and Molecular Neuroscience top 10%
- Neuroscience and Neural Engineering 5
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 6
Cognitive Neuroscience
Biomedical Engineering
- Advanced optical system design 2

Co-authors: Ting‐Chang Chang Kuan‐Chang Chang Tsung‐Ming Tsai Simon M. Sze Ya-Chi Hung Min-Chen Chen Jung‐Hui Chen Chih‐Cheng Shih
Cited by: Polymers and Plastics Electrical and Electronic Engineering Cellular and Molecular Neuroscience
Journals: IEEE Electron Device Letters (14 papers)Applied Physics Letters (11 papers)Nanoscale Research Letters (5 papers)
Partner nations: Taiwan China United States

In The Last Decade

Yong-En Syu

43 papers receiving 1.4k citations

Peers

Countries citing papers authored by Yong-En Syu

Since Specialization

Citations

This map shows the geographic impact of Yong-En Syu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yong-En Syu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yong-En Syu more than expected).

Fields of papers citing papers by Yong-En Syu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yong-En Syu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yong-En Syu. The network helps show where Yong-En Syu may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Yong-En Syu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yong-En Syu Line = papers co-authored together Yong-En Syu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Novel Local Dimming Approach by Controlling LCD Backlight Modules via Deep Learning Information ·Tsorng-Lin Chia,Yong-En Syu,Akinori OHMORI	2025	0
2	Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode Nanoscale Research Letters ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kendell Cynthia,Tai-Fa Young,Yong-En Syu,Simon M. Sze	2016	11
3	Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment Nanoscale Research Letters ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kendell Cynthia,Tai-Fa Young,Yong-En Syu,Simon M. Sze	2016	14
4	Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH₃ Treatment IEEE Electron Device Letters ·Ji Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Fannie L'Abbé,Jen-Chung Lou,Tian-Jian Chu,G Krishnan Amit,Min-Chen Chen,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Simon M. Sze	2015	13
5	Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory Applied Physics Letters ·Yi‐Ting Tseng,Tsung‐Ming Tsai,Ting‐Chang Chang,Chih‐Cheng Shih,Kuan‐Chang Chang,Fannie L'Abbé,Kai-Huang Chen,Jung‐Hui Chen,Abhay Ratnaparkhi,Chih‐Yang Lin,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Simon M. Sze	2015	51
6	Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory IEEE Electron Device Letters ·Chih‐Yang Lin,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Fannie L'Abbé,Kuan-Hsien Liu,Hua-Mao Chen,Yi‐Ting Tseng,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Ying-Lang Wang,Wei Zhang,Simon M. Sze	2015	42
7	Physical and chemical mechanisms in oxide-based resistance random access memory Nanoscale Research Letters ·Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Fannie L'Abbé,Ya-Chi Hung,Yong-En Syu,Yao‐Feng Chang,Min-Chen Chen,Tian-Jian Chu,Hsin-Lu Chen,Chih-Hung Pan,Chih‐Cheng Shih,Jin‐Cheng Zheng,Simon M. Sze	2015	128
8	Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory IEEE Electron Device Letters ·Wei Zhang,Ying Hu,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,Hsin-Lu Chen,Yu‐Ting Su,Fannie L'Abbé,Ya-Chi Hung,Yong-En Syu,Min-Chen Chen,Jin‐Cheng Zheng,Tharindu Attanayake,Simon M. Sze	2015	17
9	Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure Applied Physics A ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,M.S. Tokareva,Yong-En Syu,Simon M. Sze	2015	6
10	Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors IEEE Transactions on Electron Devices ·Geng-Wei Chang,Ting‐Chang Chang,Armando Kamal Neme,Tsung‐Ming Tsai,Kuan‐Chang Chang,Yong-En Syu,Ya‐Hsiang Tai,Fu-Yen Jian,Ya-Chi Hung	2014	34
11	Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer Nanoscale Research Letters ·Kuan‐Chang Chang,Jen‐Wei Huang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kai-Huang Chen,Tai-Fa Young,Jung‐Hui Chen,Rui Zhang,Jen-Chung Lou,Y. P. Gubar,P. H. Hardcastle,Hui‐Chun Huang,Yong-En Syu,Dershin Gan,Dinghua Bao,Simon M. Sze	2013	15
12	High performance of graphene oxide-doped silicon oxide-based resistance random access memory Nanoscale Research Letters ·Rui Zhang,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kai-Huang Chen,Jen-Chung Lou,Jung‐Hui Chen,Tai-Fa Young,Chih‐Cheng Shih,Ya‐Liang Yang,P. H. Hardcastle,Tian-Jian Chu,Y. P. Gubar,Chih-Hung Pan,Yu‐Ting Su,Yong-En Syu,Simon M. Sze	2013	18
13	Performance and characteristics of double layer porous silicon oxide resistance random access memory Applied Physics Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Rui Zhang,Ting‐Chang Chang,J. C. Lou,Jung‐Hui Chen,Tai-Fa Young,Bae‐Heng Tseng,Chih‐Cheng Shih,P. H. Hardcastle,Min-Chen Chen,Edward H. Linnehan,Yong-En Syu,Simon M. Sze	2013	41
14	Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory IEEE Electron Device Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Mahmoud Ahmad,Jung‐Hui Chen,Yong-En Syu,Geng-Wei Chang,Tian-Jian Chu,赵月梅,Yu‐Ting Su,Min-Chen Chen,Edward H. Linnehan,Jianyu Chen,Abha Gosavi,Hui‐Chun Huang,Ya‐Hsiang Tai,Dershin Gan,Simon M. Sze	2013	58
15	Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices Applied Physics Letters ·Kai-Huang Chen,Rui Zhang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,André Von Borries Lopes,Tai-Fa Young,Jung‐Hui Chen,Chih‐Cheng Shih,Abha Gosavi,Yong-En Syu,Simon M. Sze	2013	20
16	Electrical conduction mechanism of Zn:SiO_x resistance random access memory with supercritical CO₂ fluid process Applied Physics Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Rui Zhang,Ting‐Chang Chang,Kai-Huang Chen,Jung‐Hui Chen,Tai-Fa Young,J. C. Lou,Tian-Jian Chu,Chih‐Cheng Shih,Edward H. Linnehan,Yu‐Ting Su,Yong-En Syu,Abha Gosavi,Min-Chen Chen,農林省水産局,Ying Hu,Simon M. Sze	2013	38
17	Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications IEEE Electron Device Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Ting‐Chang Chang,Yong-En Syu,Cavaleiro da Fé,Geng-Wei Chang,赵月梅,Min-Chen Chen,Hui‐Chun Huang,E K Vijayakumar,Ya‐Hsiang Tai,Dershin Gan,Ya‐Liang Yang,Tai-Fa Young,Bae‐Heng Tseng,Kai-Huang Chen,Ming‐Jinn Tsai,Ye-Xin Xian,H. Sze,Simon M. Sze	2012	45
18	Study of Resistive Switching Characteristics on a Temperature-Sensitive FeO_x-Transition Layer in a TiN/SiO₂/FeO_x/Fe Structure ECS Journal of Solid State Science and Technology ·Yao‐Feng Chang,Taikun Zhao,Geng-Wei Chang,Yong-En Syu,Ya‐Hsiang Tai,Ting‐Chang Chang	2012	6
19	Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment Applied Physics Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Ting‐Chang Chang,Yong-En Syu,M.S. Tokareva,Bae‐Heng Tseng,Simon M. Sze	2012	36
20	Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment Applied Physics Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Yong-En Syu,Wu Rui,Cavaleiro da Fé,Chenghua Li,Dershin Gan,Simon M. Sze	2011	55

About Yong-En Syu

Yong-En Syu is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Cellular and Molecular Neuroscience, having authored 44 papers that have together received 1.4k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (35 papers), Ferroelectric and Negative Capacitance Devices (26 papers), Semiconductor materials and devices (21 papers), Transition Metal Oxide Nanomaterials (9 papers), Thin-Film Transistor Technologies (6 papers), Electronic and Structural Properties of Oxides (6 papers), Neuroscience and Neural Engineering (5 papers) and Advanced optical system design (2 papers). The work is most often cited by research in Polymers and Plastics (418 citations), Electrical and Electronic Engineering (1.4k citations) and Cellular and Molecular Neuroscience (269 citations). Yong-En Syu has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Simon M. Sze, Ya-Chi Hung, Min-Chen Chen, Jung‐Hui Chen, Chih‐Cheng Shih, Tian-Jian Chu and Tai-Fa Young. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Nanoscale Research Letters, ECS Journal of Solid State Science and Technology and Electrochemical and Solid-State Letters.

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