Yong-En Syu

1.6k citations

44 papers · 1.4k indexed · h-index 23

Electrical and Electronic Engineering top 5%
Materials Chemistry top 10%
Polymers and Plastics top 5%
Cellular and Molecular Neuroscience top 10%
Biomedical Engineering

Co-authors: Ting‐Chang Chang Kuan‐Chang Chang Tsung‐Ming Tsai Simon M. Sze Ya-Chi Hung Min-Chen Chen Jung‐Hui Chen Chih‐Cheng Shih
Topics: Advanced Memory and Neural Computing (35 papers)Ferroelectric and Negative Capacitance Devices (26 papers)Semiconductor materials and devices (21 papers)
Cited by: Polymers and Plastics Electrical and Electronic Engineering Cellular and Molecular Neuroscience
Journals: Applied Physics Letters Journal of Applied Physics Nanoscale
Partner nations: Taiwan China United States

In The Last Decade

Yong-En Syu

43 papers receiving 1.4k citations

Peers

Countries citing papers authored by Yong-En Syu

Since Specialization

Citations

This map shows the geographic impact of Yong-En Syu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yong-En Syu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yong-En Syu more than expected).

Fields of papers citing papers by Yong-En Syu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yong-En Syu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yong-En Syu. The network helps show where Yong-En Syu may publish in the future.

Co-authorship network of co-authors of Yong-En Syu

This figure shows the co-authorship network connecting the top 25 collaborators of Yong-En Syu. A scholar is included among the top collaborators of Yong-En Syu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yong-En Syu. Yong-En Syu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A Novel Local Dimming Approach by Controlling LCD Backlight Modules via Deep Learning 2025 ·Information ·Tsorng-Lin Chia,Yong-En Syu,(unknown)	0
2	Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode 2016 ·Nanoscale Research Letters ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,(unknown),Tai-Fa Young,Yong-En Syu,Simon M. Sze	11
3	Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment 2016 ·Nanoscale Research Letters ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,(unknown),Tai-Fa Young,Yong-En Syu,Simon M. Sze	14
4	Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH₃ Treatment 2015 ·IEEE Electron Device Letters ·Ji Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,(unknown),Jen-Chung Lou,Tian-Jian Chu,(unknown),Min-Chen Chen,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Simon M. Sze	13
5	Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory 2015 ·Applied Physics Letters ·Yi‐Ting Tseng,Tsung‐Ming Tsai,Ting‐Chang Chang,Chih‐Cheng Shih,Kuan‐Chang Chang,(unknown),Kai-Huang Chen,Jung‐Hui Chen,(unknown),Chih‐Yang Lin,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Simon M. Sze	51
6	Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory 2015 ·IEEE Electron Device Letters ·Chih‐Yang Lin,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,(unknown),Kuan-Hsien Liu,Hua-Mao Chen,Yi‐Ting Tseng,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Ying-Lang Wang,Wei Zhang,Simon M. Sze	42
7	Physical and chemical mechanisms in oxide-based resistance random access memory 2015 ·Nanoscale Research Letters ·Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,(unknown),Ya-Chi Hung,Yong-En Syu,Yao‐Feng Chang,Min-Chen Chen,Tian-Jian Chu,Hsin-Lu Chen,Chih-Hung Pan,Chih‐Cheng Shih,Jin‐Cheng Zheng,Simon M. Sze	128
8	Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory 2015 ·IEEE Electron Device Letters ·Wei Zhang,Ying Hu,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,Hsin-Lu Chen,Yu‐Ting Su,(unknown),Ya-Chi Hung,Yong-En Syu,Min-Chen Chen,Jin‐Cheng Zheng,(unknown),Simon M. Sze	17
9	Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure 2015 ·Applied Physics A ·Kai-Huang Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,(unknown),Yong-En Syu,Simon M. Sze	6
10	Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors 2014 ·IEEE Transactions on Electron Devices ·Geng-Wei Chang,Ting‐Chang Chang,(unknown),Tsung‐Ming Tsai,Kuan‐Chang Chang,Yong-En Syu,Ya‐Hsiang Tai,Fu-Yen Jian,Ya-Chi Hung	34
11	Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer 2013 ·Nanoscale Research Letters ·Kuan‐Chang Chang,Jen‐Wei Huang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kai-Huang Chen,Tai-Fa Young,Jung‐Hui Chen,Rui Zhang,Jen-Chung Lou,(unknown),(unknown),Hui‐Chun Huang,Yong-En Syu,Dershin Gan,Dinghua Bao,Simon M. Sze	15
12	High performance of graphene oxide-doped silicon oxide-based resistance random access memory 2013 ·Nanoscale Research Letters ·Rui Zhang,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kai-Huang Chen,Jen-Chung Lou,Jung‐Hui Chen,Tai-Fa Young,Chih‐Cheng Shih,Ya‐Liang Yang,(unknown),Tian-Jian Chu,(unknown),Chih-Hung Pan,Yu‐Ting Su,Yong-En Syu,Simon M. Sze	18
13	Performance and characteristics of double layer porous silicon oxide resistance random access memory 2013 ·Applied Physics Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Rui Zhang,Ting‐Chang Chang,J. C. Lou,Jung‐Hui Chen,Tai-Fa Young,Bae‐Heng Tseng,Chih‐Cheng Shih,(unknown),Min-Chen Chen,(unknown),Yong-En Syu,Simon M. Sze	41
14	Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory 2013 ·IEEE Electron Device Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,(unknown),Jung‐Hui Chen,Yong-En Syu,Geng-Wei Chang,Tian-Jian Chu,(unknown),Yu‐Ting Su,Min-Chen Chen,(unknown),Jianyu Chen,(unknown),Hui‐Chun Huang,Ya‐Hsiang Tai,Dershin Gan,Simon M. Sze	58
15	Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices 2013 ·Applied Physics Letters ·Kai-Huang Chen,Rui Zhang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,(unknown),Tai-Fa Young,Jung‐Hui Chen,Chih‐Cheng Shih,(unknown),Yong-En Syu,Simon M. Sze	20
16	Electrical conduction mechanism of Zn:SiO_x resistance random access memory with supercritical CO₂ fluid process 2013 ·Applied Physics Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Rui Zhang,Ting‐Chang Chang,Kai-Huang Chen,Jung‐Hui Chen,Tai-Fa Young,J. C. Lou,Tian-Jian Chu,Chih‐Cheng Shih,(unknown),Yu‐Ting Su,Yong-En Syu,(unknown),Min-Chen Chen,(unknown),Ying Hu,Simon M. Sze	38
17	Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications 2012 ·IEEE Electron Device Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Ting‐Chang Chang,Yong-En Syu,(unknown),Geng-Wei Chang,(unknown),Min-Chen Chen,Hui‐Chun Huang,(unknown),Ya‐Hsiang Tai,Dershin Gan,Ya‐Liang Yang,Tai-Fa Young,Bae‐Heng Tseng,Kai-Huang Chen,Ming‐Jinn Tsai,(unknown),H. Sze,Simon M. Sze	45
18	Study of Resistive Switching Characteristics on a Temperature-Sensitive FeO_x-Transition Layer in a TiN/SiO₂/FeO_x/Fe Structure 2012 ·ECS Journal of Solid State Science and Technology ·Yao‐Feng Chang,(unknown),Geng-Wei Chang,Yong-En Syu,Ya‐Hsiang Tai,Ting‐Chang Chang	6
19	Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment 2012 ·Applied Physics Letters ·Tsung‐Ming Tsai,Kuan‐Chang Chang,Ting‐Chang Chang,Yong-En Syu,(unknown),Bae‐Heng Tseng,Simon M. Sze	36
20	Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment 2011 ·Applied Physics Letters ·Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Yong-En Syu,(unknown),(unknown),Chenghua Li,Dershin Gan,Simon M. Sze	55

About Yong-En Syu

Yong-En Syu is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Cellular and Molecular Neuroscience, having authored 44 papers that have together received 1.4k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (35 papers), Ferroelectric and Negative Capacitance Devices (26 papers) and Semiconductor materials and devices (21 papers). The work is most often cited by research in Polymers and Plastics (418 citations), Electrical and Electronic Engineering (1.4k citations) and Cellular and Molecular Neuroscience (269 citations). Yong-En Syu has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Simon M. Sze, Ya-Chi Hung, Min-Chen Chen, Jung‐Hui Chen, Chih‐Cheng Shih, Tian-Jian Chu and Tai-Fa Young. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Nanoscale.

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