Min-Chen Chen

2.3k total citations
79 papers, 2.0k citations indexed

About

Min-Chen Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Min-Chen Chen has authored 79 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 19 papers in Polymers and Plastics. Recurrent topics in Min-Chen Chen's work include Advanced Memory and Neural Computing (55 papers), Ferroelectric and Negative Capacitance Devices (40 papers) and Semiconductor materials and devices (33 papers). Min-Chen Chen is often cited by papers focused on Advanced Memory and Neural Computing (55 papers), Ferroelectric and Negative Capacitance Devices (40 papers) and Semiconductor materials and devices (33 papers). Min-Chen Chen collaborates with scholars based in Taiwan, China and United States. Min-Chen Chen's co-authors include Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Sheng-Yao Huang, Simon M. Sze, Shih-Ching Chen, Simon M. Sze, Chih-Tsung Tsai, Chih-Hung Pan and Tian-Jian Chu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Min-Chen Chen

79 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Min-Chen Chen Taiwan	26	2.0k	651	640	355	87	79	2.0k
Christina Schindler Germany	15	1.4k 0.7×	407 0.6×	354 0.6×	454 1.3×	95 1.1×	32	1.4k
Firman Mangasa Simanjuntak Taiwan	26	1.3k 0.7×	499 0.8×	472 0.7×	480 1.4×	79 0.9×	53	1.5k
Minseok Jo South Korea	23	1.9k 1.0×	600 0.9×	534 0.8×	478 1.3×	127 1.5×	72	2.0k
Tian-Jian Chu Taiwan	19	1.4k 0.7×	442 0.7×	354 0.6×	337 0.9×	31 0.4×	32	1.4k
Jae Hyuck Jang South Korea	6	1.9k 1.0×	580 0.9×	675 1.1×	584 1.6×	55 0.6×	9	2.0k
Asal Kiazadeh Portugal	18	899 0.5×	320 0.5×	318 0.5×	183 0.5×	92 1.1×	42	956
Yong-En Syu Taiwan	23	1.4k 0.7×	418 0.6×	444 0.7×	269 0.8×	45 0.5×	44	1.4k
Jungho Shin South Korea	27	2.1k 1.1×	801 1.2×	512 0.8×	603 1.7×	77 0.9×	54	2.2k
Chih‐Cheng Shih Taiwan	20	1.0k 0.5×	275 0.4×	295 0.5×	239 0.7×	41 0.5×	55	1.1k
Kyung Min Kim South Korea	17	1.5k 0.8×	576 0.9×	682 1.1×	249 0.7×	95 1.1×	46	1.6k

Countries citing papers authored by Min-Chen Chen

Since Specialization

Citations

This map shows the geographic impact of Min-Chen Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Min-Chen Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Min-Chen Chen more than expected).

Fields of papers citing papers by Min-Chen Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Min-Chen Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Min-Chen Chen. The network helps show where Min-Chen Chen may publish in the future.

Co-authorship network of co-authors of Min-Chen Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Min-Chen Chen. A scholar is included among the top collaborators of Min-Chen Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Min-Chen Chen. Min-Chen Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hung, Wei‐Chieh, et al.. (2023). Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology. IEEE Electron Device Letters. 44(5). 789–792. 1 indexed citations

Chen, Min-Chen, et al.. (2023). Clinical narrative-aware deep neural network for emergency department critical outcome prediction. Journal of Biomedical Informatics. 138. 104284–104284. 14 indexed citations

Chen, Po‐Hsun, Min-Chen Chen, Chih-Cheng Yang, et al.. (2022). Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta ₂ O ₅ -based electrolyte for all-solid-state electrochromic devices with enhanced performance. Nanotechnology. 33(27). 275711–275711. 5 indexed citations

Wu, Peiyu, Min-Chen Chen, Ting‐Chang Chang, et al.. (2021). Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. Semiconductor Science and Technology. 36(8). 85005–85005. 2 indexed citations

Wu, Peiyu, Ting‐Chang Chang, Min-Chen Chen, et al.. (2021). Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments. IEEE Transactions on Electron Devices. 68(2). 541–544. 5 indexed citations

Chen, Min-Chen, et al.. (2021). Numerical Relation Detection in Financial Tweets using Dependency-aware Deep Neural Network. International Conference on Computational Linguistics. 218–225. 1 indexed citations

Lin, Chien-Yu, Min-Chen Chen, Wei‐Chun Hung, et al.. (2020). Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs. IEEE Transactions on Electron Devices. 67(12). 5403–5407. 14 indexed citations

Chen, Min-Chen, Ting‐Chang Chang, Chenhsin Lien, et al.. (2020). Impact of electrode thermal conductivity on high resistance state level in HfO ₂ -based RRAM. Journal of Physics D Applied Physics. 53(39). 395101–395101. 9 indexed citations

Chen, Po‐Hsun, Min-Chen Chen, Ting‐Chang Chang, et al.. (2019). Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory. IEEE Transactions on Electron Devices. 66(6). 2595–2599. 7 indexed citations

10.

Chen, Po‐Hsun, Min-Chen Chen, Ting‐Chang Chang, et al.. (2019). Investigation of the forming process under UV illumination in HfO ₂ -based resistance random access memory with a transparent electrode. Journal of Physics D Applied Physics. 53(2). 25104–25104. 5 indexed citations

11.

Chang, Ting‐Chang, Bo‐Wei Chen, Po‐Hsun Chen, et al.. (2019). Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors. IEEE Electron Device Letters. 40(6). 913–916. 14 indexed citations

12.

Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2017). Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications. Applied Surface Science. 414. 224–229. 19 indexed citations

13.

Lin, Chih-Yang, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2017). Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode. Nanoscale. 9(25). 8586–8590. 58 indexed citations

14.

Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2017). Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory. ACS Applied Materials & Interfaces. 9(3). 3149–3155. 31 indexed citations

15.

Chen, Hsin-Lu, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2017). Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic. IEEE Electron Device Letters. 38(10). 1401–1404. 11 indexed citations

16.

Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2016). Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory. IEEE Transactions on Electron Devices. 63(12). 4769–4775. 10 indexed citations

17.

Chang, Kuan‐Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, et al.. (2015). Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid. IEEE Electron Device Letters. 36(6). 558–560. 25 indexed citations

18.

Chen, Ji, Kuan‐Chang Chang, Ting‐Chang Chang, et al.. (2015). Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH₃ Treatment. IEEE Electron Device Letters. 36(11). 1138–1141. 13 indexed citations

19.

Huang, Sheng-Yao, et al.. (2012). The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors. Applied Physics Letters. 100(22). 18 indexed citations

20.

Chen, Min-Chen, Ting‐Chang Chang, Sheng-Yao Huang, et al.. (2009). A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid. Applied Physics Letters. 94(16). 73 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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