Takehiro Yoshida

1.6k citations

56 papers · 1.3k indexed · h-index 22

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 37
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 15
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 22
- Silicon Carbide Semiconductor Technologies 13
Materials Chemistry top 10%
- ZnO doping and properties 12
- Silicon Nanostructures and Photoluminescence 7
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 10
Mechanics of Materials
- Metal and Thin Film Mechanics 7

Co-authors: Tomoyoshi Mishima Fumimasa Horikiri Yoshinobu Narita Hiroshi Ohta Masatomo Shibata Yuichi Oshima Hajime Fujikura Kazutoshi Watanabe
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Japanese Journal of Applied Physics (12 papers)Applied Physics Express (6 papers)Thin Solid Films (3 papers)
Partner nations: Japan Germany United States

In The Last Decade

Takehiro Yoshida

55 papers receiving 1.3k citations

Peers

Countries citing papers authored by Takehiro Yoshida

Since Specialization

Citations

This map shows the geographic impact of Takehiro Yoshida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Takehiro Yoshida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Takehiro Yoshida more than expected).

Fields of papers citing papers by Takehiro Yoshida

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Takehiro Yoshida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Takehiro Yoshida. The network helps show where Takehiro Yoshida may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Takehiro Yoshida, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Takehiro Yoshida Line = papers co-authored together Takehiro Yoshida links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples Japanese Journal of Applied Physics ·Ryo Matsuda,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Noboru Fukuhara,Tomoyoshi Mishima,Kenji Shiojima	2021	2
2	Breakdown phenomenon dependences on the number and positions of threading dislocations in vertical p-n junction GaN diodes Japanese Journal of Applied Physics ·Hiroshi Ohta,Durkadın Demir,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2021	8
3	Thermal-assisted contactless photoelectrochemical etching for GaN Applied Physics Express ·Fumimasa Horikiri,Noboru Fukuhara,Hiroshi Ohta,Durkadın Demir,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima,Giancarlo Fiorini,Fatimah Nurul Fajrin,S. Durga,Taketomo Sato	2020	5
4	Impact of threading dislocations in GaN p–n diodes on forward I – V characteristics Japanese Journal of Applied Physics ·Hiroshi Ohta,Durkadın Demir,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2020	12
5	4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability Japanese Journal of Applied Physics ·Hiroshi Ohta,Durkadın Demir,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2019	51
6	Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p–n junction diodes Japanese Journal of Applied Physics ·Durkadın Demir,Hiroshi Ohta,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2019	13
7	Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source Applied Physics Express ·Fumimasa Horikiri,Noboru Fukuhara,Hiroshi Ohta,Durkadın Demir,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima,Giancarlo Fiorini,Fatimah Nurul Fajrin,Taketomo Sato	2019	22
8	Impact of Lowering Threading Dislocation Density on Performances of Vertical GaN p-n Junction Diodes Hiroshi Ohta,Durkadın Demir,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2019	1
9	Electrodeless photo-assisted electrochemical etching of GaN using a H₃PO₄-based solution containing S₂O₈ ^2– ions Applied Physics Express ·Giancarlo Fiorini,Fatimah Nurul Fajrin,Fumimasa Horikiri,Noboru Fukuhara,Yoshinobu Narita,Takehiro Yoshida,Taketomo Sato	2019	14
10	Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates physica status solidi (b) ·Kenji Shiojima,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Tomoyoshi Mishima	2019	11
11	Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals Applied Physics Express ·Kazunobu Kojima,Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida,Hajime Fujikura,Shigefusa F. Chichibu	2019	22
12	Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy Japanese Journal of Applied Physics ·Fumimasa Horikiri,Yoshinobu Narita,Takehiro Yoshida	2017	11
13	Recent progress of high-quality GaN substrates by HVPE method Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hajime Fujikura,Takehiro Yoshida,Masatomo Shibata,Eun Sok Park	2017	36
14	Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method Crystal Growth & Design ·Masayuki Imanishi,Takehiro Yoshida,Toshio Kitamura,Kosuke Murakami,Mamoru Imade,Masashi Yoshimura,Masatomo Shibata,Yoshiyuki Tsusaka,Junji Matsui,Yusuke Mori	2017	45
15	Direct synthesis of CuIn(Se , S1−)2 films from elemental In, Cu, Se, S particle precursor films and its dependence on energy Thin Solid Films ·R. Kaigawa,Takehiro Yoshida,Takuya Kitagawa,R. Klenk	2010	3
16	Thermal and electrical properties of high‐quality freestanding GaN wafers with high carrier concentration Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yuichi Oshima,Takehiro Yoshida,Takeshi Eri,Masatomo Shibata,Tomoyoshi Mishima	2007	21
17	Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method Journal of Crystal Growth ·Takehiro Yoshida,Yuichi Oshima,Takeshi Eri,Ken‐ichi Ikeda,S. Yamamoto,Kazutoshi Watanabe,Masatomo Shibata,Tomoyoshi Mishima	2007	106
18	Effects of annealing on luminescence properties of Si nanocrystallites prepared by pulsed laser ablation in inert gas Materials Science and Engineering C ·Ikurou Umezu,S.艾尔顿,Tomohiro Yamaguchi,Akira Sugimura,Toshiharu Makino,Yuka Yamada,Nobuyasu Suzuki,Takehiro Yoshida	2001	2
19	Structure of the Ti-Single Crystal Si Interface MRS Proceedings ·Shuichi Ogawa,Takashi Kouzaki,Takehiro Yoshida,Rodney Sinclair	1990	3
20	Rapid Thermal Annealed Undoped LPCVD Si/Single Crystal Si Substrate Structures with an Implant of Si Near Interfaces MRS Proceedings ·Shuichi Ogawa,Inna Khanina,Takashi Kouzaki,Takehiro Yoshida,Yujiro Yoshioka	1987	3

About Takehiro Yoshida

Takehiro Yoshida is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 56 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (22 papers), Ga2O3 and related materials (15 papers), Silicon Carbide Semiconductor Technologies (13 papers), ZnO doping and properties (12 papers), Semiconductor materials and interfaces (10 papers), Metal and Thin Film Mechanics (7 papers) and Silicon Nanostructures and Photoluminescence (7 papers). The work is most often cited by research in Condensed Matter Physics (1.0k citations), Electronic, Optical and Magnetic Materials (605 citations), Electrical and Electronic Engineering (789 citations), Materials Chemistry (469 citations) and Atomic and Molecular Physics, and Optics (250 citations). Takehiro Yoshida has collaborated with scholars based in Japan, Germany and United States. Frequent co-authors include Tomoyoshi Mishima, Fumimasa Horikiri, Yoshinobu Narita, Hiroshi Ohta, Masatomo Shibata, Yuichi Oshima, Hajime Fujikura, Kazutoshi Watanabe, Tohru Nakamura and Naoki Kaneda. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Physics Express, Thin Solid Films, Journal of The Electrochemical Society and IEEE Electron Device Letters.

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