Shengrui Xu

2.6k total citations
150 papers, 2.1k citations indexed

About

Shengrui Xu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Shengrui Xu has authored 150 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 120 papers in Condensed Matter Physics, 96 papers in Electronic, Optical and Magnetic Materials and 86 papers in Materials Chemistry. Recurrent topics in Shengrui Xu's work include GaN-based semiconductor devices and materials (120 papers), Ga2O3 and related materials (96 papers) and ZnO doping and properties (80 papers). Shengrui Xu is often cited by papers focused on GaN-based semiconductor devices and materials (120 papers), Ga2O3 and related materials (96 papers) and ZnO doping and properties (80 papers). Shengrui Xu collaborates with scholars based in China and United States. Shengrui Xu's co-authors include Jincheng Zhang, Yue Hao, Yue Hao, Chunfu Zhang, Qian Feng, Hong Zhou, Yachao Zhang, Jing Ning, Jinfeng Zhang and Chenlu Wang and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shengrui Xu

144 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shengrui Xu China 23 1.3k 1.2k 1.1k 859 386 150 2.1k
Toshiyuki Oishi Japan 23 1.2k 0.9× 1.1k 0.9× 838 0.7× 979 1.1× 379 1.0× 104 2.0k
Andrew J. Green United States 21 2.0k 1.6× 1.9k 1.6× 476 0.4× 591 0.7× 859 2.2× 59 2.5k
Ching‐Lien Hsiao Sweden 23 641 0.5× 908 0.7× 943 0.8× 415 0.5× 99 0.3× 99 1.5k
Xuelin Yang China 26 991 0.8× 847 0.7× 1.6k 1.4× 1.1k 1.3× 74 0.2× 174 2.3k
Jacob H. Leach United States 26 897 0.7× 1.1k 0.9× 1.2k 1.0× 952 1.1× 208 0.5× 112 2.1k
Che‐Hao Liao Taiwan 22 688 0.5× 758 0.6× 716 0.6× 317 0.4× 154 0.4× 75 1.2k
Jared M. Johnson United States 21 1.3k 1.0× 1.6k 1.3× 413 0.4× 477 0.6× 568 1.5× 36 1.9k
Andrew D. Koehler United States 24 1.1k 0.8× 1.0k 0.8× 1.1k 1.0× 1.2k 1.4× 314 0.8× 109 2.0k
Kelson D. Chabak United States 31 3.0k 2.3× 2.9k 2.4× 1.1k 0.9× 1.2k 1.4× 1.2k 3.1× 88 3.8k
Fabien Massabuau United Kingdom 23 588 0.4× 821 0.7× 889 0.8× 517 0.6× 155 0.4× 69 1.4k

Countries citing papers authored by Shengrui Xu

Since Specialization
Citations

This map shows the geographic impact of Shengrui Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shengrui Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shengrui Xu more than expected).

Fields of papers citing papers by Shengrui Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shengrui Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shengrui Xu. The network helps show where Shengrui Xu may publish in the future.

Co-authorship network of co-authors of Shengrui Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Shengrui Xu. A scholar is included among the top collaborators of Shengrui Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shengrui Xu. Shengrui Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Yachao, Yifan Li, Zhihong Liu, et al.. (2024). Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method. Crystal Growth & Design. 24(11). 4300–4305. 1 indexed citations
2.
Wang, Xinhao, et al.. (2024). P-type ionization level lowering in ultrawide bandgap Al1−xGaxN[112¯0] digital alloys. Physical review. B.. 110(3). 2 indexed citations
3.
Su, Huake, Tao Zhang, Shengrui Xu, et al.. (2024). An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing. Applied Physics Letters. 124(16). 8 indexed citations
4.
Su, Huake, Tao Zhang, Shengrui Xu, et al.. (2024). A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON/I OFF Ratio. IEEE Transactions on Electron Devices. 71(7). 4433–4436.
5.
Wang, Xinhao, Shengrui Xu, Jiaduo Zhu, et al.. (2023). The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN. Journal of Alloys and Compounds. 970. 172560–172560. 1 indexed citations
6.
Zhang, Tao, et al.. (2023). Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes. Chinese Physics B. 32(8). 87301–87301. 1 indexed citations
7.
Xu, Shengrui, et al.. (2023). Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells. Journal of Semiconductors. 44(4). 42801–42801. 5 indexed citations
8.
Su, Huake, et al.. (2023). Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density. IEEE Electron Device Letters. 44(12). 1939–1942. 7 indexed citations
9.
Xu, Shengrui, Yanrong Cao, Huake Su, et al.. (2023). Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer. IEEE photonics journal. 15(3). 1–5. 4 indexed citations
10.
Xu, Shengrui, Weiguo Liu, Huake Su, et al.. (2023). Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer. Results in Physics. 51. 106714–106714. 5 indexed citations
11.
Zheng, Xuefeng, Shengrui Xu, Peixian Li, et al.. (2023). Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon. Applied Physics Letters. 122(14). 4 indexed citations
12.
Xu, Shengrui, et al.. (2023). Comparative study of unintentionally doped and Si-doped multi-channel AlGaN/GaN heterostructures. Materials Letters. 347. 134581–134581. 3 indexed citations
13.
Su, Huake, et al.. (2023). Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures. Applied Physics Letters. 123(13). 9 indexed citations
14.
Wang, Chenlu, Jincheng Zhang, Shengrui Xu, et al.. (2021). Progress in state-of-the-art technologies of Ga 2 O 3 devices. Journal of Physics D Applied Physics. 54(24). 243001–243001. 133 indexed citations
15.
Zhou, Hong, Jincheng Zhang, Jincheng Zhang, et al.. (2021). Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis. Applied Physics Letters. 118(17). 9 indexed citations
16.
Xu, Shengrui, et al.. (2021). Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes. IEEE photonics journal. 13(3). 1–11. 7 indexed citations
17.
Su, Huake, Shengrui Xu, Ying Zhao, et al.. (2021). Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes. IEEE Electron Device Letters. 42(9). 1346–1349. 22 indexed citations
18.
Wang, Tingting, Sining Dong, Zhili Xiao, et al.. (2021). Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures. Physical Review Materials. 5(6). 4 indexed citations
19.
Xu, Shengrui, et al.. (2020). Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate. Materials Letters. 277. 128395–128395. 6 indexed citations
20.
Xu, Shengrui, et al.. (2018). Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping. IEEE Transactions on Electron Devices. 66(1). 478–484. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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