Tamotsu Hashizume

7.3k total citations
238 papers, 6.3k citations indexed

About

Tamotsu Hashizume is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tamotsu Hashizume has authored 238 papers receiving a total of 6.3k indexed citations (citations by other indexed papers that have themselves been cited), including 193 papers in Electrical and Electronic Engineering, 149 papers in Condensed Matter Physics and 88 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tamotsu Hashizume's work include Semiconductor materials and devices (155 papers), GaN-based semiconductor devices and materials (148 papers) and Ga2O3 and related materials (88 papers). Tamotsu Hashizume is often cited by papers focused on Semiconductor materials and devices (155 papers), GaN-based semiconductor devices and materials (148 papers) and Ga2O3 and related materials (88 papers). Tamotsu Hashizume collaborates with scholars based in Japan, Poland and United States. Tamotsu Hashizume's co-authors include Hideki Hasegawa, Shinya Ootomo, Zenji Yatabe, Chihoko Mizue, Junji Kotani, Yujin Hori, Joel T. Asubar, Marcin Miczek, Takanori Inagaki and Taketomo Sato and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Tamotsu Hashizume

234 papers receiving 6.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Tamotsu Hashizume Japan	39	5.0k	4.8k	2.8k	1.6k	1.4k	238	6.3k
J. R. Shealy United States	33	4.5k 0.9×	6.3k 1.3×	2.9k 1.1×	2.7k 1.7×	2.0k 1.5×	133	7.5k
R. Dimitrov Germany	27	2.9k 0.6×	6.1k 1.3×	3.1k 1.1×	2.0k 1.3×	2.4k 1.8×	53	6.7k
Hideki Hasegawa Japan	32	3.5k 0.7×	2.0k 0.4×	926 0.3×	2.3k 1.4×	971 0.7×	249	4.4k
M. Asif Khan United States	50	3.8k 0.8×	7.0k 1.4×	3.3k 1.2×	2.5k 1.6×	2.6k 1.9×	118	7.9k
H. Shen United States	30	3.7k 0.8×	1.1k 0.2×	1.9k 0.7×	2.1k 1.3×	3.5k 2.6×	146	5.8k
P. P. Chow United States	31	1.8k 0.4×	1.8k 0.4×	1.3k 0.5×	618 0.4×	1.4k 1.0×	120	3.1k
P. P. Ruden United States	34	3.0k 0.6×	1.9k 0.4×	879 0.3×	1.3k 0.8×	1.0k 0.8×	135	4.1k
Bernd Beschoten Germany	29	2.1k 0.4×	1.7k 0.4×	2.1k 0.8×	3.9k 2.4×	4.3k 3.2×	95	6.9k
Lutz Geelhaar Germany	42	2.4k 0.5×	2.9k 0.6×	1.6k 0.6×	2.2k 1.4×	2.7k 2.0×	227	5.9k
Debdeep Jena United States	34	4.5k 0.9×	1.8k 0.4×	1.9k 0.7×	1.6k 1.0×	6.1k 4.5×	90	8.8k

Countries citing papers authored by Tamotsu Hashizume

Since Specialization

Citations

This map shows the geographic impact of Tamotsu Hashizume's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tamotsu Hashizume with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tamotsu Hashizume more than expected).

Fields of papers citing papers by Tamotsu Hashizume

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tamotsu Hashizume. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tamotsu Hashizume. The network helps show where Tamotsu Hashizume may publish in the future.

Co-authorship network of co-authors of Tamotsu Hashizume

This figure shows the co-authorship network connecting the top 25 collaborators of Tamotsu Hashizume. A scholar is included among the top collaborators of Tamotsu Hashizume based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tamotsu Hashizume. Tamotsu Hashizume is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ueda, Akira, Tetsuya Tohei, Yasuhiko Imai, et al.. (2021). Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction. Applied Physics Express. 14(9). 95502–95502. 5 indexed citations

Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2020). Improved DC performance and current stability of ultrathin-Al ₂ O ₃ /InAlN/GaN MOS-HEMTs with post-metallization-annealing process. Semiconductor Science and Technology. 35(3). 35027–35027. 13 indexed citations

Fukuda, Koichi, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu, & Tamotsu Hashizume. (2019). A time-dependent Verilog-A compact model for MOS capacitors with interface traps. Japanese Journal of Applied Physics. 58(SB). SBBD06–SBBD06. 1 indexed citations

Nakazawa, Satoshi, et al.. (2019). Effects of post-deposition annealing in O ₂ on threshold voltage of Al ₂ O ₃ /AlGaN/GaN MOS heterojunction field-effect transistors. Japanese Journal of Applied Physics. 58(3). 30902–30902. 10 indexed citations

Gregušová, D., L. Tóth, S. Hasenöhrl, et al.. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics. 58(SC). SCCD21–SCCD21. 2 indexed citations

Ťapajna, M., Filip Gucmann, K. Hušeková, et al.. (2018). Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures. Materials Science in Semiconductor Processing. 91. 356–361. 5 indexed citations

Froehlich, K., et al.. (2017). 原子層堆積法によるHfO2を有するAlGaN/GaN金属酸化物半導体ヘテロ構造電界効果トランジスタに及ぼす酸素プラズマ処理の影響漏れ電流と状態密度の低減. Semiconductor Science and Technology. 32(4). 8. 1 indexed citations

Stoklas, R., D. Gregušová, M. Blaho, et al.. (2017). Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction. Semiconductor Science and Technology. 32(4). 45018–45018. 19 indexed citations

Stoklas, R., et al.. (2016). Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. Journal of Applied Physics. 119(20). 24 indexed citations

10.

Adamowicz, B., et al.. (2016). On the origin of interface states at oxide/III-nitride heterojunction interfaces. Journal of Applied Physics. 120(22). 43 indexed citations

11.

Okamoto, Masayuki, Eiji Hiraki, Toshihiko Tanaka, et al.. (2014). Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit. IEEE Transactions on Industry Applications. 51(3). 2415–2422. 37 indexed citations

12.

Ťapajna, M., Š. Haščı́k, D. Gregušová, et al.. (2014). Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. Journal of Applied Physics. 116(10). 51 indexed citations

13.

Asubar, Joel T., et al.. (2013). Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 60(10). 2997–3004. 73 indexed citations

14.

Hori, Yujin, et al.. (2011). Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation. Applied Physics Express. 4(2). 21002–21002. 22 indexed citations

15.

Ohsawa, Takeo, Katsuya Iwaya, Ryota Shimizu, Tamotsu Hashizume, & Taro Hitosugi. (2010). ホモエピタキシャル成長させたSrTiO 3 薄膜の膜厚に依存する局所的な表面電子構造. Journal of Applied Physics. 108(7). 73710. 1 indexed citations

16.

Hashizume, Tamotsu, et al.. (2010). Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method. Applied Physics Letters. 97(22). 5 indexed citations

17.

Miczek, Marcin, B. Adamowicz, Chihoko Mizue, & Tamotsu Hashizume. (2009). Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures. Japanese Journal of Applied Physics. 48(4S). 04C092–04C092. 33 indexed citations

18.

Hashim, Abdul Manaf, et al.. (2003). Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves. Superlattices and Microstructures. 34(3-6). 531–537. 10 indexed citations

19.

Jin, Zhi, Tamotsu Hashizume, & Hideki Hasegawa. (2002). Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride. Applied Surface Science. 190(1-4). 361–365. 23 indexed citations

20.

Takahashi, Kunimasa, et al.. (1999). A 0.9 V operation 2-transistor flash memory for embedded logic LSIs. 21–22. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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