M. Blaho

405 total citations
42 papers, 341 citations indexed

About

M. Blaho is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Blaho has authored 42 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 22 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Blaho's work include Semiconductor materials and devices (23 papers), GaN-based semiconductor devices and materials (22 papers) and Ga2O3 and related materials (14 papers). M. Blaho is often cited by papers focused on Semiconductor materials and devices (23 papers), GaN-based semiconductor devices and materials (22 papers) and Ga2O3 and related materials (14 papers). M. Blaho collaborates with scholars based in Slovakia, Austria and Germany. M. Blaho's co-authors include D. Gregušová, K. Fröhlich, J. Kuzmı́k, E. Gornik, D. Pogány, Š. Haščı́k, M. Stecher, M. Denison, R. Stoklas and D. Silber and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

M. Blaho

40 papers receiving 325 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Blaho Slovakia	11	280	188	119	53	41	42	341
Rui Gao China	13	370 1.3×	99 0.5×	51 0.4×	54 1.0×	24 0.6×	43	409
Lorenzo Fratino France	10	121 0.4×	122 0.6×	103 0.9×	51 1.0×	71 1.7×	16	277
Gang Xie China	12	251 0.9×	223 1.2×	109 0.9×	46 0.9×	66 1.6×	30	340
Jae Hwa Seo South Korea	14	482 1.7×	218 1.2×	106 0.9×	64 1.2×	43 1.0×	70	546
John Niroula United States	12	349 1.2×	166 0.9×	52 0.4×	35 0.7×	31 0.8×	23	378
Yat Hon Ng Hong Kong	12	243 0.9×	200 1.1×	88 0.7×	37 0.7×	43 1.0×	22	300
Andreas Wentzel Germany	12	503 1.8×	277 1.5×	111 0.9×	34 0.6×	59 1.4×	65	559
Hao Feng Hong Kong	10	282 1.0×	34 0.2×	49 0.4×	49 0.9×	86 2.1×	38	332
Hiroyuki Iwaki Japan	8	183 0.7×	70 0.4×	107 0.9×	114 2.2×	76 1.9×	16	319
W. Kim Belgium	12	252 0.9×	68 0.4×	112 0.9×	48 0.9×	262 6.4×	22	373

Countries citing papers authored by M. Blaho

Since Specialization

Citations

This map shows the geographic impact of M. Blaho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Blaho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Blaho more than expected).

Fields of papers citing papers by M. Blaho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Blaho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Blaho. The network helps show where M. Blaho may publish in the future.

Co-authorship network of co-authors of M. Blaho

This figure shows the co-authorship network connecting the top 25 collaborators of M. Blaho. A scholar is included among the top collaborators of M. Blaho based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Blaho. M. Blaho is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Kuzmı́k, J., M. Blaho, D. Gregušová, et al.. (2024). Growth and performance of n++ GaN cap layer for HEMTs applications. Materials Science in Semiconductor Processing. 185. 108959–108959. 2 indexed citations

2.

Kuzmı́k, J., S. Hasenöhrl, M. Blaho, et al.. (2023). Mg Doping of N-Polar, In-Rich InAlN. Materials. 16(6). 2250–2250. 2 indexed citations

3.

Gregušová, D., Edmund Dobročka, P. Eliáš, et al.. (2021). GaAs Nanomembranes in the High Electron Mobility Transistor Technology. Materials. 14(13). 3461–3461. 3 indexed citations

4.

Gregušová, D., L. Tóth, S. Hasenöhrl, et al.. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics. 58(SC). SCCD21–SCCD21. 2 indexed citations

5.

Tóth, Lajos, Š. Haščı́k, Ildikó Cora, et al.. (2019). エッチングされたアクセス領域を持つInGaN/(GaN)/AlGaN/GaNノーマリオフ金属-酸化物-半導体高電子移動度トランジスタ. Japanese Journal of Applied Physics. 58. 1–21. 1 indexed citations

6.

Chvála, Aleš, Juraj Marek, D. Donoval, et al.. (2019). Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs. Journal of Circuits Systems and Computers. 28(supp01). 1940009–1940009. 1 indexed citations

7.

Chvála, Aleš, Juraj Marek, D. Donoval, et al.. (2018). Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations. IEEE Transactions on Electron Devices. 65(6). 2666–2669. 8 indexed citations

8.

Stoklas, R., D. Gregušová, M. Blaho, et al.. (2017). Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction. Semiconductor Science and Technology. 32(4). 45018–45018. 19 indexed citations

9.

Stoklas, R., et al.. (2017). Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied Physics Letters. 110(24). 19 indexed citations

10.

Blaho, M., D. Gregušová, Š. Haščı́k, et al.. (2016). Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n⁺⁺GaN/InAlN/AlN/GaN MOS HEMTs. 31. 177–180. 1 indexed citations

11.

Blaho, M., et al.. (2015). Reducing the Impact of Uncertainties in Networked Control Systems Using Type-2 Fuzzy Logic. Journal of Electrical Engineering. 65(6). 364–370. 2 indexed citations

12.

Blaho, M., D. Gregušová, Š. Haščı́k, et al.. (2015). Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors. physica status solidi (a). 212(5). 1086–1090. 23 indexed citations

13.

Blaho, M., et al.. (2014). Real-Time Motor Control Based on PROFINET Protocol. International Review of Automatic Control (IREACO). 7(3). 328–333. 1 indexed citations

14.

Gregušová, D., K. Hušeková, R. Stoklas, et al.. (2013). ZrO₂/InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions. Japanese Journal of Applied Physics. 52(8S). 08JN07–08JN07. 5 indexed citations

15.

Hasenöhrl, S., P. Eliáš, R. Stoklas, et al.. (2012). Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Science. 269. 60–64. 4 indexed citations

16.

Murgaš, Ján, et al.. (2010). A robust MRAC modification and performance improvement in the presence of uncertainties. IFAC Proceedings Volumes. 43(10). 186–190. 2 indexed citations

17.

Blaho, M., Heinrich Wolf, A. Andreini, et al.. (2004). Internal behavior of BCD ESD protection devices under TLP and very-fast TLP stress. IEEE Transactions on Device and Materials Reliability. 4(3). 535–541. 4 indexed citations

18.

Kuzmı́k, J., M. Blaho, D. Pogány, et al.. (2004). Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. Open Repository and Bibliography (University of Luxembourg). 39. 319–322. 4 indexed citations

19.

Denison, M., M. Blaho, Pavel Rodin, et al.. (2004). Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress. IEEE Transactions on Electron Devices. 51(8). 1331–1339. 38 indexed citations

20.

Denison, M., M. Blaho, Pavel Rodin, et al.. (2004). Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress. IEEE Transactions on Electron Devices. 51(10). 1695–1703. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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