M. Blaho

412 citations

42 papers · 344 · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 23
- Electrostatic Discharge in Electronics 9
- Advancements in Semiconductor Devices and Circuit Design 6
- Silicon Carbide Semiconductor Technologies 5
- Integrated Circuits and Semiconductor Failure Analysis 4
Condensed Matter Physics 22
- GaN-based semiconductor devices and materials 22

Co-authors: D. Gregušová (22 shared papers)K. Fröhlich (9 shared papers)J. Kuzmı́k (17 shared papers)D. Pogány (10 shared papers)E. Gornik (10 shared papers)Š. Hašc̆ı́k (12 shared papers)R. Stoklas (12 shared papers)M. Denison (5 shared papers)
Journals: Microelectronics Reliability (4 papers)Applied Physics Letters (3 papers)Applied Surface Science (3 papers)IEEE Transactions on Electron Devices (3 papers)Japanese Journal of Applied Physics (3 papers)
Partner nations: Slovakia Austria Germany

In The Last Decade

M. Blaho

40 papers receiving 332 citations

Peers

Countries citing papers authored by M. Blaho

Since Specialization

Citations

This map shows the geographic impact of M. Blaho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Blaho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Blaho more than expected).

Fields of papers citing papers by M. Blaho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Blaho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Blaho. The network helps show where M. Blaho may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Blaho, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Blaho Line = papers co-authored together M. Blaho links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress IEEE Transactions on Electron Devices ·M. Denison, M. Blaho, Pavel Rodin, V. Dubec, D. Pogány, D. Silber, E. Gornik, M. Stecher	2004	38
2	Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region IEEE Electron Device Letters ·M. Jurkovič, D. Gregušová, V. Palankovski, Š. Hašc̆ı́k, M. Blaho, K. Čičo, K. Fröhlich, J.‐F. Carlin, N. Grandjean, J. Kuzmı́k	2013	36
3	Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress IEEE Transactions on Electron Devices ·M. Denison, M. Blaho, Pavel Rodin, V. Dubec, D. Pogány, D. Silber, E. Gornik, M. Stecher	2004	27
4	Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth Applied Physics Letters ·D. Gregušová, M. Jurkovič, Š. Hašc̆ı́k, M. Blaho, Alena Seifertová, J. Fedor, M. Ťapajna, K. Fröhlich, Peter Vogrinčič, Jozef Liday, Joff Derluyn, Marianne Germain, J. Kuzmı́k	2014	26
5	Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors physica status solidi (a) ·M. Blaho, D. Gregušová, Š. Hašc̆ı́k, M. Jurkovič, M. Ťapajna, K. Fröhlich, J. Dérer, J.‐F. Carlin, N. Grandjean, J. Kuzmı́k	2015	24
6	Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition Applied Physics Letters ·Maciej Matys, R. Stoklas, M. Blaho, B. Adamowicz	2017	20
7	Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction Semiconductor Science and Technology ·R. Stoklas, D. Gregušová, M. Blaho, K. Fröhlich, J. Novák, Maciej Matys, Zenji Yatabe, P. Kordoš, Tamotsu Hashizume	2017	19
8	Hot spot dynamics in quasivertical DMOS under ESD stress M. Denison, M. Blaho, D. Silber, Joachim Joos, N. Jensen, M. Stecher, V. Dubec, D. Pogány, E. Gornik	2004	17
9	Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs Applied Physics Letters ·M. Blaho, D. Gregušová, Š. Hašc̆ı́k, M. Ťapajna, K. Fröhlich, A. Šatka, J. Kuzmı́k	2017	12
10	Technology of integrated self-aligned E/D-mode n⁺⁺GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics Semiconductor Science and Technology ·M. Blaho, D. Gregušová, Š. Hašc̆ı́k, Alena Seifertová, M. Ťapajna, J. Šoltýs, A. Šatka, Lukáš Nagy, Aleš Chvála, Juraj Marek, J.‐F. Carlin, N. Grandjean, Г. Константинидис, J. Kuzmı́k	2016	12
11	Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs Microelectronic Engineering ·M. Blaho, D. Gregušová, M. Jurkovič, Š. Hašc̆ı́k, J. Fedor, P. Kordoš, K. Fröhlich, Frank Brunner, Melani Cho, Oliver Hilt, Joachim Würfl, J. Kuzmı́k	2013	11
12	Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Applied Surface Science ·D. Gregušová, Filip Gucmann, R. Kúdela, Matej Mičušík, R. Stoklas, L. Válik, J. Greguš, M. Blaho, P. Kordoš	2016	10
13	Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations IEEE Transactions on Electron Devices ·Aleš Chvála, Lukáš Nagy, Juraj Marek, J. Priesol, D. Donoval, M. Blaho, D. Gregušová, J. Kuzmı́k, A. Šatka	2018	8
14	Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions Journal of Applied Physics ·K. Fröhlich, Ivan Kundrata, M. Blaho, M. Precner, M. Ťapajna, Martin Klimo, Ondrej Šuch, Ondrej Škvarek	2018	8
15	Resistive switching in nonplanar HfO2-based structures with variable series resistance Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·K. Čičo, Peter Jančovič, J. Dérer, V. Šmatko, A. Rosová, M. Blaho, Boris Hudec, D. Gregušová, K. Fröhlich	2015	7
16	Polarization‐Engineered n⁺GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs physica status solidi (a) ·D. Gregušová, M. Blaho, Š. Hašc̆ı́k, Peter Šichman, A. Laurenčíková, Alena Seifertová, J. Dérer, Frank Brunner, Joachim Würfl, J. Kuzmı́k	2017	6
17	A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress Microelectronics Reliability ·V. Dubec, S. Bychikhin, M. Blaho, D. Pogány, E. Gornik, Joost Willemen, Ningsong Qu, W. Wilkening, L. Zullino, A. Andreini	2003	6
18	ZrO₂/InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions Japanese Journal of Applied Physics ·D. Gregušová, K. Hušeková, R. Stoklas, M. Blaho, M. Jurkovič, J.‐F. Carlin, N. Grandjean, P. Kordoš	2013	5
19	Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions Microelectronics Reliability ·M. Blaho, D. Pogány, L. Zullino, A. Andreini, E. Gornik	2002	4
20	Internal behavior of BCD ESD protection devices under TLP and very-fast TLP stress IEEE Transactions on Device and Materials Reliability ·M. Blaho, L. Zullino, Heinrich Wolf, R. Stella, A. Andreini, Horst Gieser, D. Pogány, E. Gornik	2004	4

About M. Blaho

M. Blaho is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 42 papers that have together received 344 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (14 papers), Electrostatic Discharge in Electronics (9 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Condensed Matter Physics (191 citations), Electronic, Optical and Magnetic Materials (120 citations), Electrical and Electronic Engineering (280 citations), Atomic and Molecular Physics, and Optics (41 citations) and Materials Chemistry (53 citations). M. Blaho has collaborated with scholars based in Slovakia, Austria and Germany. Frequent co-authors include D. Gregušová, K. Fröhlich, J. Kuzmı́k, D. Pogány, E. Gornik, Š. Hašc̆ı́k, R. Stoklas, M. Denison, M. Stecher and D. Silber. Their work appears in journals such as Microelectronics Reliability, Applied Physics Letters, Applied Surface Science, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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M. Blaho

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