R. Stoklas

1.1k total citations
58 papers, 903 citations indexed

About

R. Stoklas is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Stoklas has authored 58 papers receiving a total of 903 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Condensed Matter Physics, 40 papers in Electrical and Electronic Engineering and 31 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Stoklas's work include GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (30 papers). R. Stoklas is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (30 papers). R. Stoklas collaborates with scholars based in Slovakia, Germany and Japan. R. Stoklas's co-authors include D. Gregušová, P. Kordoš, J. Novák, K. Čičo, Š. Gaži, J. Kuzmı́k, Tamotsu Hashizume, Andrei Vescan, T. Lalinský and B. Adamowicz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

R. Stoklas

57 papers receiving 872 citations

Peers

R. Stoklas

CMP

EEE

EOMM

AMPO

Brendan Gunning United States

Eng Fong Chor Singapore

Nirupam Hatui United States

Ki‐Sik Im South Korea

J.W. Chung United States

A.P. Zhang United States

K.P. Lee United States

Takuma Nanjo Japan

R. Hickman United States

Brian L. Swenson United States

Brendan Gunning United States

R. Stoklas

569 ×0.8

CMP

366 ×0.5

EEE

245 ×0.6

EOMM

215 ×0.9

197 ×1.1

AMPO

Citations per year, relative to R. Stoklas R. Stoklas (= 1×) peers Brendan Gunning

Countries citing papers authored by R. Stoklas

Since Specialization

Citations

This map shows the geographic impact of R. Stoklas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Stoklas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Stoklas more than expected).

Fields of papers citing papers by R. Stoklas

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Stoklas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Stoklas. The network helps show where R. Stoklas may publish in the future.

Co-authorship network of co-authors of R. Stoklas

This figure shows the co-authorship network connecting the top 25 collaborators of R. Stoklas. A scholar is included among the top collaborators of R. Stoklas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Stoklas. R. Stoklas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kuzmı́k, J., R. Stoklas, S. Hasenöhrl, et al.. (2024). InN/InAlN heterostructures for new generation of fast electronics. Journal of Applied Physics. 135(24).

Kuzmı́k, J., S. Hasenöhrl, M. Blaho, et al.. (2023). Mg Doping of N-Polar, In-Rich InAlN. Materials. 16(6). 2250–2250. 2 indexed citations

Stoklas, R., S. Hasenöhrl, D. Gregušová, et al.. (2023). Vertical GaN Transistor with Semi‐Insulating Channel. physica status solidi (a). 220(16). 1 indexed citations

Stoklas, R., S. Hasenöhrl, Edmund Dobročka, Filip Gucmann, & J. Kuzmı́k. (2022). Electron transport properties in thin InN layers grown on InAlN. Materials Science in Semiconductor Processing. 155. 107250–107250. 1 indexed citations

Kuzmı́k, J., A. Adikimenakis, M. Ťapajna, et al.. (2021). InN: Breaking the limits of solid-state electronics. AIP Advances. 11(12). 8 indexed citations

Zelent, Mateusz, J. Šoltýs, Xiaoguang Li, et al.. (2021). Skyrmion Formation in Nanodisks Using Magnetic Force Microscopy Tip. Nanomaterials. 11(10). 2627–2627. 4 indexed citations

Zelent, Mateusz, J. Šoltýs, V. A. Gubanov, et al.. (2021). Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot. Applied Physics Letters. 118(21). 9 indexed citations

Gucmann, Filip, S. Hasenöhrl, P. Eliáš, et al.. (2021). InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures. Semiconductor Science and Technology. 36(7). 75025–75025. 3 indexed citations

Stoklas, R., Aleš Chvála, S. Hasenöhrl, et al.. (2021). Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels. IEEE Transactions on Electron Devices. 68(5). 2365–2371. 7 indexed citations

10.

Gregušová, D., L. Tóth, S. Hasenöhrl, et al.. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics. 58(SC). SCCD21–SCCD21. 2 indexed citations

11.

Tóth, Lajos, Š. Haščı́k, Ildikó Cora, et al.. (2019). エッチングされたアクセス領域を持つInGaN/(GaN)/AlGaN/GaNノーマリオフ金属-酸化物-半導体高電子移動度トランジスタ. Japanese Journal of Applied Physics. 58. 1–21. 1 indexed citations

12.

Hasenöhrl, S., Edmund Dobročka, R. Stoklas, et al.. (2018). Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer. Applied Surface Science. 470. 1–7. 10 indexed citations

13.

Hasenöhrl, S., et al.. (2018). Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures. Applied Physics Express. 12(1). 14001–14001. 4 indexed citations

14.

Stoklas, R., D. Gregušová, S. Hasenöhrl, et al.. (2018). Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition. Applied Surface Science. 461. 255–259. 10 indexed citations

15.

Stoklas, R., D. Gregušová, M. Blaho, et al.. (2017). Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂by atomic layer deposition: leakage current and density of states reduction. Semiconductor Science and Technology. 32(4). 45018–45018. 19 indexed citations

16.

Stoklas, R., et al.. (2017). Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied Physics Letters. 110(24). 19 indexed citations

17.

Stoklas, R., et al.. (2017). Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors. Semiconductor Science and Technology. 32(2). 25017–25017. 6 indexed citations

18.

Stoklas, R., et al.. (2016). Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. Journal of Applied Physics. 119(20). 24 indexed citations

19.

Gregušová, D., Š. Gaži, Zdeněk Sofer, et al.. (2010). Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics. 49(4R). 46504–46504. 5 indexed citations

20.

Gregušová, D., R. Stoklas, K. Čičo, et al.. (2007). Characterization of AlGaN/GaN MOSHFETs with Al₂O₃ as gate oxide. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2720–2723. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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