V. Kaper

585 total citations
19 papers, 456 citations indexed

About

V. Kaper is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. Kaper has authored 19 papers receiving a total of 456 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. Kaper's work include GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (5 papers). V. Kaper is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (5 papers). V. Kaper collaborates with scholars based in United States, China and Germany. V. Kaper's co-authors include J. R. Shealy, T. Prunty, V. Tilak, L.F. Eastman, J. Smart, Richard M. Thompson, Hyungtak Kim, Rachel Thompson, B.M. Green and A. Vertiatchikh and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Journal of Physics Condensed Matter and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

V. Kaper

19 papers receiving 420 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. Kaper United States	9	418	378	147	120	50	19	456
Feng-Tso Chien Taiwan	12	277 0.7×	480 1.3×	118 0.8×	129 1.1×	57 1.1×	71	542
S.J. Cai United States	10	334 0.8×	298 0.8×	106 0.7×	152 1.3×	56 1.1×	13	417
G. Curatola Italy	13	381 0.9×	552 1.5×	126 0.9×	156 1.3×	36 0.7×	35	649
Akihisa Terano Japan	10	284 0.7×	279 0.7×	98 0.7×	127 1.1×	30 0.6×	28	348
W. S. Tan United Kingdom	10	474 1.1×	388 1.0×	149 1.0×	192 1.6×	39 0.8×	21	522
N. Sarazin France	8	336 0.8×	250 0.7×	91 0.6×	121 1.0×	44 0.9×	18	368
Quentin Diduck United States	9	328 0.8×	412 1.1×	114 0.8×	126 1.1×	25 0.5×	31	490
Martin Fagerlind Sweden	10	317 0.8×	339 0.9×	85 0.6×	93 0.8×	32 0.6×	20	377
Hee‐Sung Kang South Korea	13	430 1.0×	480 1.3×	132 0.9×	245 2.0×	38 0.8×	37	585
M. Hirsch Germany	7	165 0.4×	254 0.7×	116 0.8×	76 0.6×	55 1.1×	19	344

Countries citing papers authored by V. Kaper

Since Specialization

Citations

This map shows the geographic impact of V. Kaper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Kaper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Kaper more than expected).

Fields of papers citing papers by V. Kaper

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Kaper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Kaper. The network helps show where V. Kaper may publish in the future.

Co-authorship network of co-authors of V. Kaper

This figure shows the co-authorship network connecting the top 25 collaborators of V. Kaper. A scholar is included among the top collaborators of V. Kaper based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Kaper. V. Kaper is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Danylyuk, Serhiy, S. А. Vitusevich, V. Kaper, et al.. (2005). Phase noise study of AlGaN/GaN HEMT X‐band oscillator. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2615–2618. 7 indexed citations

Kaper, V., Richard M. Thompson, T. Prunty, & J. R. Shealy. (2005). Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs. IEEE Transactions on Microwave Theory and Techniques. 53(1). 55–65. 41 indexed citations

Feinberg, Alec, et al.. (2005). Parametric degradation in transistors. 197. 266–270. 2 indexed citations

Kaper, V., et al.. (2004). Monolithic AlGaN/GaN HEMT SPDT switch. AMS Acta (University of Bologna). 25(24). 13 indexed citations

Kaper, V., V. Tilak, Rachel Thompson, et al.. (2004). Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT. 97–102. 3 indexed citations

Cha, Ho‐Young, Young Chul Choi, Richard M. Thompson, et al.. (2004). Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors. Journal of Electronic Materials. 33(8). 908–911. 2 indexed citations

Thompson, Rachel, T. Prunty, V. Kaper, & J. R. Shealy. (2004). Performance of the AlGaN HEMT Structure With a Gate Extension. IEEE Transactions on Electron Devices. 51(2). 292–295. 38 indexed citations

Thompson, Rachel, V. Kaper, T. Prunty, & J. R. Shealy. (2003). Improved fabrication process for obtaining high power density AlGaN/GaN HEMTs. 298–300. 4 indexed citations

Kaper, V., V. Tilak, T. Prunty, et al.. (2003). Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias. 118–125. 7 indexed citations

10.

Kaper, V., et al.. (2003). RF overdrive experiments on 0.5 μm power pHEMTs. 61–68. 2 indexed citations

11.

Green, B.M., V. Kaper, V. Tilak, J. R. Shealy, & L.F. Eastman. (2003). Dynamic loadline analysis of AlGaN/GaN HEMTs. 14. 443–452. 5 indexed citations

12.

Kaper, V., et al.. (2003). X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. AMS Acta (University of Bologna). 9 indexed citations

13.

Green, B.M., V. Tilak, V. Kaper, et al.. (2003). Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions. IEEE Transactions on Microwave Theory and Techniques. 51(2). 618–623. 34 indexed citations

14.

Kaper, V., V. Tilak, Hyungtak Kim, et al.. (2003). High-power monolithic AlGaN/GaN HEMT oscillator. IEEE Journal of Solid-State Circuits. 38(9). 1457–1461. 38 indexed citations

15.

Shealy, J. R., V. Kaper, V. Tilak, et al.. (2002). An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer. Journal of Physics Condensed Matter. 14(13). 3499–3509. 95 indexed citations

16.

Eastman, L.F., V. Tilak, V. Kaper, et al.. (2002). Progress in High-Power, High Frequency AlGaN/GaN HEMTs. physica status solidi (a). 194(2). 433–438. 31 indexed citations

17.

Kaper, V., et al.. (2002). 2-D device numerical simulations of gate sinking failure mechanism in pHEMT. 63–68. 2 indexed citations

18.

Kaper, V., et al.. (2002). A Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAs/InGaAs pHEMTs. 6 indexed citations

19.

Tilak, V., V. Kaper, Hyungtak Kim, et al.. (2001). Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 22(11). 504–506. 117 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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