Cen Kong

448 total citations
21 papers, 361 citations indexed

About

Cen Kong is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Cen Kong has authored 21 papers receiving a total of 361 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Cen Kong's work include GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor materials and devices (9 papers). Cen Kong is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor materials and devices (9 papers). Cen Kong collaborates with scholars based in China. Cen Kong's co-authors include Tangsheng Chen, Yuechan Kong, Jianjun Zhou, Kai Zhang, Zhonghui Li, Jianjun Zhou, Xinxin Yu, Tingting Liu, Xinxin Yu and Haiyan Lu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.

In The Last Decade

Cen Kong

21 papers receiving 336 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Cen Kong China 9 301 278 128 86 48 21 361
Yuuki Enatsu Japan 10 436 1.4× 307 1.1× 209 1.6× 108 1.3× 59 1.2× 14 461
Ming Tao China 10 258 0.9× 242 0.9× 141 1.1× 80 0.9× 69 1.4× 18 328
Giorgia Longobardi United Kingdom 12 449 1.5× 436 1.6× 169 1.3× 109 1.3× 99 2.1× 34 546
Karolina Grabiańska Poland 7 247 0.8× 121 0.4× 137 1.1× 116 1.3× 44 0.9× 18 280
Zhongda Li United States 10 349 1.2× 383 1.4× 182 1.4× 101 1.2× 90 1.9× 34 488
Yuichi Minoura Japan 8 281 0.9× 262 0.9× 108 0.8× 84 1.0× 68 1.4× 19 347
N. Killat United Kingdom 11 428 1.4× 385 1.4× 92 0.7× 171 2.0× 66 1.4× 18 480
Norikazu Nakamura Japan 12 347 1.2× 280 1.0× 167 1.3× 127 1.5× 72 1.5× 31 418
Omair I. Saadat United States 10 453 1.5× 423 1.5× 230 1.8× 128 1.5× 76 1.6× 17 545
R. Tyagi United States 6 300 1.0× 382 1.4× 152 1.2× 106 1.2× 81 1.7× 7 469

Countries citing papers authored by Cen Kong

Since Specialization
Citations

This map shows the geographic impact of Cen Kong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cen Kong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cen Kong more than expected).

Fields of papers citing papers by Cen Kong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cen Kong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cen Kong. The network helps show where Cen Kong may publish in the future.

Co-authorship network of co-authors of Cen Kong

This figure shows the co-authorship network connecting the top 25 collaborators of Cen Kong. A scholar is included among the top collaborators of Cen Kong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Cen Kong. Cen Kong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Wen, Xinxin Yu, Jianjun Zhou, et al.. (2018). Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier. IEEE Journal of the Electron Devices Society. 6. 360–364. 36 indexed citations
2.
Zhang, Kai, Yuechan Kong, Jianjun Zhou, et al.. (2017). High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications. IEEE Electron Device Letters. 38(5). 615–618. 85 indexed citations
3.
Zhang, Kai, Cen Kong, Jianjun Zhou, Yuechan Kong, & Tangsheng Chen. (2017). High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology. Applied Physics Express. 10(2). 24101–24101. 16 indexed citations
4.
Liu, Tingting, et al.. (2017). 3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology. IEEE Electron Device Letters. 38(10). 1417–1420. 73 indexed citations
5.
Gao, Tao, Ruimin Xu, Yuechan Kong, et al.. (2016). Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications. physica status solidi (a). 213(5). 1241–1245. 8 indexed citations
6.
Yu, Xinxin, Jianjun Zhou, Yuechan Kong, et al.. (2016). High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB. 128–131. 3 indexed citations
7.
Yu, Xinxin, Jianjun Zhou, Dunjun Chen, et al.. (2016). Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure. Solid-State Electronics. 126. 32–35. 4 indexed citations
8.
Gao, Tao, et al.. (2016). High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer. Journal of Semiconductors. 37(6). 64013–64013. 1 indexed citations
9.
Gao, Tao, Ruimin Xu, Kai Zhang, et al.. (2015). Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4as the gate dielectric. Semiconductor Science and Technology. 30(11). 115010–115010. 7 indexed citations
10.
Wang, Zheli, Jianjun Zhou, Yuechan Kong, et al.. (2015). Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3as gate insulator. Journal of Semiconductors. 36(9). 94004–94004. 7 indexed citations
11.
Gao, Tao, Ruimin Xu, Yuechan Kong, et al.. (2015). Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric. Applied Physics Letters. 106(24). 20 indexed citations
12.
Kong, Yuechan, Jianjun Zhou, Cen Kong, et al.. (2014). Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs. IEEE Electron Device Letters. 35(3). 336–338. 41 indexed citations
13.
Yu, Xinxin, Jinyu Ni, Zhonghui Li, et al.. (2014). AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V. Chinese Physics Letters. 31(3). 37201–37201. 2 indexed citations
14.
Yu, Xinxin, Jinyu Ni, Zhonghui Li, Jianjun Zhou, & Cen Kong. (2014). Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon. Japanese Journal of Applied Physics. 53(5). 51001–51001. 18 indexed citations
15.
Kong, Cen, Jianjun Zhou, Yuechan Kong, Jinyu Ni, & Tangsheng Chen. (2014). Monolithically integrated E/D mode MIS GaN HEMTs and inverters on Si substrate. 53. 1–2. 2 indexed citations
16.
Kong, Yuechan, Jianjun Zhou, Cen Kong, et al.. (2013). Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering. Applied Physics Letters. 102(4). 8 indexed citations
17.
Zhou, Jianjun, Song Bai, Cen Kong, et al.. (2013). Research on the diamond MISFET. Journal of Semiconductors. 34(3). 34006–34006. 2 indexed citations
18.
Kong, Cen, et al.. (2012). A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor. IEEE Transactions on Microwave Theory and Techniques. 60(11). 3413–3419. 17 indexed citations
19.
Kong, Cen, Hui Li, Shuwen Jiang, et al.. (2011). A monolithic AlGaN/GaN HEMT VCO using BST film varactor. 51. 197–200. 3 indexed citations
20.
An, Jingjing, et al.. (2009). Observation on antennal sensillia of Lasioderma serricorne with scanning electron microscope.. Kunchong zhishi. 46(5). 714–718. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Yuuki Enatsu Breakdown of academic impact, for papers by Ming Tao Breakdown of academic impact, for papers by Giorgia Longobardi Breakdown of academic impact, for papers by Karolina Grabiańska Breakdown of academic impact, for papers by Zhongda Li Breakdown of academic impact, for papers by Yuichi Minoura Breakdown of academic impact, for papers by N. Killat Breakdown of academic impact, for papers by Norikazu Nakamura Breakdown of academic impact, for papers by Omair I. Saadat Breakdown of academic impact, for papers by R. Tyagi
Rankless by CCL
2026