Cen Kong

448 total citations
21 papers, 361 citations indexed

About

Cen Kong is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Cen Kong has authored 21 papers receiving a total of 361 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Cen Kong's work include GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor materials and devices (9 papers). Cen Kong is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (9 papers) and Semiconductor materials and devices (9 papers). Cen Kong collaborates with scholars based in China. Cen Kong's co-authors include Tangsheng Chen, Yuechan Kong, Jianjun Zhou, Kai Zhang, Zhonghui Li, Jianjun Zhou, Xinxin Yu, Tingting Liu, Xinxin Yu and Haiyan Lu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.

In The Last Decade

Cen Kong

21 papers receiving 336 citations

Peers

Countries citing papers authored by Cen Kong

Since Specialization

Citations

This map shows the geographic impact of Cen Kong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cen Kong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cen Kong more than expected).

Fields of papers citing papers by Cen Kong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cen Kong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cen Kong. The network helps show where Cen Kong may publish in the future.

Co-authorship network of co-authors of Cen Kong

This figure shows the co-authorship network connecting the top 25 collaborators of Cen Kong. A scholar is included among the top collaborators of Cen Kong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Cen Kong. Cen Kong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier 2018 ·IEEE Journal of the Electron Devices Society ·Wen Wang, Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Yuechan Kong, Zhonghui Li, Tangsheng Chen	36
2	High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications 2017 ·IEEE Electron Device Letters ·Kai Zhang, Yuechan Kong, (unknown), Jianjun Zhou, Xinxin Yu, Cen Kong, Zhonghui Li, Tangsheng Chen	85
3	High-performance enhancement-mode Al₂O₃/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology 2017 ·Applied Physics Express ·Kai Zhang, Cen Kong, Jianjun Zhou, Yuechan Kong, Tangsheng Chen	16
4	3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology 2017 ·IEEE Electron Device Letters ·Tingting Liu, Yuechan Kong, (unknown), (unknown), Jianjun Zhou, Cen Kong, Tangsheng Chen	73
5	Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications 2016 ·physica status solidi (a) ·Tao Gao, Ruimin Xu, Yuechan Kong, Jianjun Zhou, Kai Zhang, Cen Kong, (unknown), Tangsheng Chen	8
6	High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB 2016 ·Xinxin Yu, Jianjun Zhou, Yuechan Kong, (unknown), Weibo Wang, (unknown), Haiyan Lu, Wen Wang, Cen Kong, Zhonghui Li, Tangsheng Chen	3
7	Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure 2016 ·Solid-State Electronics ·(unknown), Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Haiyan Lu, Yuechan Kong, Zhonghui Li, Tangsheng Chen	4
8	High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer 2016 ·Journal of Semiconductors ·Tao Gao, (unknown), Kai Zhang, (unknown), Jianjun Zhou, Cen Kong, (unknown), (unknown), (unknown)	1
9	Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric 2015 ·Semiconductor Science and Technology ·Tao Gao, Ruimin Xu, Kai Zhang, Yuechan Kong, Jianjun Zhou, Cen Kong, (unknown), Tangsheng Chen, Yue Hao	7
10	Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al₂O₃as gate insulator 2015 ·Journal of Semiconductors ·Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, (unknown), Yang Yang, Tangsheng Chen	7
11	Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric 2015 ·Applied Physics Letters ·Tao Gao, Ruimin Xu, Yuechan Kong, Jianjun Zhou, Cen Kong, (unknown), Tangsheng Chen	20
12	Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs 2014 ·IEEE Electron Device Letters ·Yuechan Kong, Jianjun Zhou, Cen Kong, Youtao Zhang, (unknown), Haiyan Lu, Tangsheng Chen, (unknown)	41
13	AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V 2014 ·Chinese Physics Letters ·Xinxin Yu, Jinyu Ni, Zhonghui Li, Cen Kong, Jianjun Zhou, (unknown), Lei Pan, Yuechan Kong, Tangsheng Chen	2
14	Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon 2014 ·Japanese Journal of Applied Physics ·Xinxin Yu, Jinyu Ni, Zhonghui Li, Jianjun Zhou, Cen Kong	18
15	Monolithically integrated E/D mode MIS GaN HEMTs and inverters on Si substrate 2014 ·Cen Kong, Jianjun Zhou, Yuechan Kong, Jinyu Ni, Tangsheng Chen	2
16	Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering 2013 ·Applied Physics Letters ·Yuechan Kong, Jianjun Zhou, Cen Kong, (unknown), Youtao Zhang, Haiyan Lu, Tangsheng Chen	8
17	Research on the diamond MISFET 2013 ·Journal of Semiconductors ·Jianjun Zhou, Song Bai, Cen Kong, (unknown), Haiyan Lu, Yuechan Kong, Tangsheng Chen	2
18	A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor 2012 ·IEEE Transactions on Microwave Theory and Techniques ·Cen Kong, Hui Li, Xiaojian Chen, (unknown), Jianjun Zhou, Chen Chen	17
19	A monolithic AlGaN/GaN HEMT VCO using BST film varactor 2011 ·Cen Kong, Hui Li, Shuwen Jiang, Jianjun Zhou, Xiaojian Chen, Chen Chen	3
20	Observation on antennal sensillia of Lasioderma serricorne with scanning electron microscope. 2009 ·Kunchong zhishi ·Jingjing An, Weizheng Li, Guohui Yuan, Cen Kong, Haichao Li, (unknown), (unknown)	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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