Ming Tao

407 total citations
18 papers, 328 citations indexed

About

Ming Tao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ming Tao has authored 18 papers receiving a total of 328 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ming Tao's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (11 papers) and Ga2O3 and related materials (6 papers). Ming Tao is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (11 papers) and Ga2O3 and related materials (6 papers). Ming Tao collaborates with scholars based in China, United States and Japan. Ming Tao's co-authors include Maojun Wang, Yilong Hao, Bo Shen, Cheng P. Wen, Bing Xie, Jinyan Wang, Wengang Wu, Kai Cheng, Min Yu and Xuelin Yang and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

Ming Tao

17 papers receiving 313 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ming Tao China 10 258 242 141 80 69 18 328
Jinyu Ni China 11 395 1.5× 310 1.3× 230 1.6× 131 1.6× 57 0.8× 32 458
E.B. Kaminsky United States 10 309 1.2× 271 1.1× 112 0.8× 95 1.2× 89 1.3× 18 390
S. Vitanov Austria 8 298 1.2× 250 1.0× 92 0.7× 36 0.5× 99 1.4× 13 325
B. Peres United States 12 347 1.3× 282 1.2× 209 1.5× 100 1.3× 51 0.7× 21 401
Joachim Wuerfl Germany 10 370 1.4× 379 1.6× 158 1.1× 72 0.9× 80 1.2× 23 466
Omair I. Saadat United States 10 453 1.8× 423 1.7× 230 1.6× 128 1.6× 76 1.1× 17 545
Shichuang Sun China 8 328 1.3× 248 1.0× 220 1.6× 108 1.4× 47 0.7× 18 365
Hongling Xiao China 10 324 1.3× 187 0.8× 182 1.3× 123 1.5× 63 0.9× 45 378
Daigo Kikuta Japan 11 417 1.6× 417 1.7× 225 1.6× 62 0.8× 53 0.8× 41 495
Diego Marti Switzerland 14 470 1.8× 504 2.1× 183 1.3× 60 0.8× 177 2.6× 27 601

Countries citing papers authored by Ming Tao

Since Specialization
Citations

This map shows the geographic impact of Ming Tao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming Tao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming Tao more than expected).

Fields of papers citing papers by Ming Tao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming Tao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming Tao. The network helps show where Ming Tao may publish in the future.

Co-authorship network of co-authors of Ming Tao

This figure shows the co-authorship network connecting the top 25 collaborators of Ming Tao. A scholar is included among the top collaborators of Ming Tao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming Tao. Ming Tao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Xiao, Jing, Ming Tao, Yijun Shi, et al.. (2025). Analysis of Degradation Behavior and Mechanism of p-GaN Gate HEMT Under High-Power Microwave Irradiation. IEEE Transactions on Electron Devices. 72(8). 4011–4016.
2.
Chi, Yaqing, Yang Guo, Ming Tao, et al.. (2024). Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM. Applied Physics Letters. 125(2). 1 indexed citations
3.
Xiao, Jing, Ming Tao, Kai Tang, et al.. (2024). Interface and Border Traps Study in Si₃N₄/AlN/GaN MIS-HEMTs With In-Situ N₂ or H₂/N₂ Plasma Pretreatment. IEEE Electron Device Letters. 46(2). 270–273. 1 indexed citations
4.
Tao, Ming, Jing Xiao, Jiashu Chen, et al.. (2023). Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study. Surfaces and Interfaces. 44. 103620–103620. 1 indexed citations
5.
Guo, Yang, Bin Liang, Ming Tao, et al.. (2023). Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET. IEEE Electron Device Letters. 44(10). 1712–1715. 3 indexed citations
6.
Tao, Ming, Jing Xiao, Deng Luo, et al.. (2023). High-Frequency Three-Level Gate Driver for GaN HEMT Bridge Crosstalk Suppression. IEEE Transactions on Power Electronics. 39(1). 1343–1352. 7 indexed citations
7.
Wang, Maojun, et al.. (2020). Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities. IEEE Electron Device Letters. 41(3). 485–488. 27 indexed citations
8.
Wang, Maojun, Jie Zhang, Ming Tao, et al.. (2020). Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance. IEEE Electron Device Letters. 41(3). 329–332. 57 indexed citations
9.
Tao, Ming, Yilong Hao, Cheng P. Wen, et al.. (2019). High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. 1–3. 2 indexed citations
10.
Tao, Ming, Bing Xie, Cheng P. Wen, et al.. (2018). Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process. IEEE Transactions on Electron Devices. 65(4). 1453–1457. 47 indexed citations
11.
Wang, Maojun, Ming Tao, Cheng P. Wen, et al.. (2017). Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers. IEEE Electron Device Letters. 38(8). 1075–1078. 18 indexed citations
12.
Tao, Ming, Maojun Wang, Cheng P. Wen, et al.. (2017). Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit. 93–96. 9 indexed citations
13.
Tao, Ming, Maojun Wang, Bing Xie, et al.. (2016). Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon. IEEE Transactions on Electron Devices. 63(12). 4860–4864. 7 indexed citations
14.
Wang, Maojun, Ming Tao, Min Yu, et al.. (2016). Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique. Applied Physics Express. 9(9). 91001–91001. 9 indexed citations
15.
Wang, Maojun, Ming Tao, Cheng P. Wen, et al.. (2016). A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices. IEEE Electron Device Letters. 37(4). 377–380. 55 indexed citations
16.
Wang, Maojun, Chuan Zhang, Ming Tao, et al.. (2015). Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress. Japanese Journal of Applied Physics. 54(4). 44101–44101. 26 indexed citations
17.
Oka, Y., et al.. (2003). Properties of thick DLC films prepared by plasma-based ion implantation and deposition using combined RF and H.V. pulses. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 700–703. 21 indexed citations
18.
Tao, Ming, A. Botchkarev, Fan Zhang, et al.. (1996). Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2674–2683. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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