D.C. Radulescu

510 total citations
23 papers, 395 citations indexed

About

D.C. Radulescu is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Ceramics and Composites. According to data from OpenAlex, D.C. Radulescu has authored 23 papers receiving a total of 395 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 2 papers in Ceramics and Composites. Recurrent topics in D.C. Radulescu's work include Semiconductor Quantum Structures and Devices (19 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). D.C. Radulescu is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). D.C. Radulescu collaborates with scholars based in United States, Romania and Brazil. D.C. Radulescu's co-authors include L.F. Eastman, P.J. Tasker, L.D. Nguyen, G. W. Wicks, W. J. Schaff, A. R. Calawa, M. Foisy, W. J. Schaff, George O. Ramseyer and S. D. Hersee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

D.C. Radulescu

23 papers receiving 369 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D.C. Radulescu United States	12	347	315	62	48	31	23	395
T. Sonoda Japan	10	296 0.9×	208 0.7×	45 0.7×	40 0.8×	28 0.9×	43	318
Russ Fischer United States	5	398 1.1×	410 1.3×	86 1.4×	46 1.0×	27 0.9×	5	485
T. Nittono Japan	13	477 1.4×	333 1.1×	70 1.1×	52 1.1×	33 1.1×	42	512
L. Osterling United States	7	264 0.8×	270 0.9×	49 0.8×	52 1.1×	26 0.8×	8	330
P. Grabbe United States	12	357 1.0×	363 1.2×	67 1.1×	81 1.7×	84 2.7×	29	519
O. Aina United States	13	465 1.3×	402 1.3×	43 0.7×	57 1.2×	44 1.4×	46	510
K.R. Gleason United States	10	362 1.0×	288 0.9×	46 0.7×	43 0.9×	39 1.3×	23	405
C. Anayama Japan	11	303 0.9×	295 0.9×	73 1.2×	71 1.5×	40 1.3×	25	378
M. L. Young United Kingdom	11	314 0.9×	262 0.8×	30 0.5×	108 2.3×	30 1.0×	24	364
H. Thomas United Kingdom	12	358 1.0×	275 0.9×	96 1.5×	65 1.4×	32 1.0×	46	411

Countries citing papers authored by D.C. Radulescu

Since Specialization

Citations

This map shows the geographic impact of D.C. Radulescu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.C. Radulescu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.C. Radulescu more than expected).

Fields of papers citing papers by D.C. Radulescu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.C. Radulescu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.C. Radulescu. The network helps show where D.C. Radulescu may publish in the future.

Co-authorship network of co-authors of D.C. Radulescu

This figure shows the co-authorship network connecting the top 25 collaborators of D.C. Radulescu. A scholar is included among the top collaborators of D.C. Radulescu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.C. Radulescu. D.C. Radulescu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Borodi, Gheorghe, Maria Boşca, Răzvan Ștefan, et al.. (2013). Magnetic behavior of erbium-zinc-borate glasses and glass ceramics. AIP conference proceedings. 99–104. 1 indexed citations

Borodi, Gheorghe, et al.. (2013). XRD and FTIR structural investigation of gadolinium-zinc-borate glass ceramics. AIP conference proceedings. 94–98. 1 indexed citations

Nguyen, L.D., P.J. Tasker, D.C. Radulescu, & L.F. Eastman. (1989). Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs. IEEE Transactions on Electron Devices. 36(10). 2243–2248. 42 indexed citations

Nguyen, L.D., D.C. Radulescu, M. Foisy, P.J. Tasker, & L.F. Eastman. (1989). Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs. IEEE Transactions on Electron Devices. 36(5). 833–838. 53 indexed citations

Wicks, G. W., et al.. (1988). Summary Abstract: A Raman study of the effects of growth stops on the interfaces of AlAs/GaAs superlattices grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 613–614. 1 indexed citations

Radulescu, D.C., et al.. (1988). Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band. IEEE Electron Device Letters. 9(1). 1–3. 25 indexed citations

Radulescu, D.C., et al.. (1988). Comparisons of microwave performance between single-gate and dual-gate MODFETs. IEEE Electron Device Letters. 9(2). 59–61. 22 indexed citations

Alterovitz, Samuel A., et al.. (1988). Variable angle spectroscopic ellipsometry: Application to GaAs-AlGaAs multilayer homogeneity characterization. Journal of Applied Physics. 63(10). 5081–5084. 17 indexed citations

Levy, Moshe, E. Kohn, D.C. Radulescu, et al.. (1988). Fabrication and performance of 0.1- mu m gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz. IEEE Transactions on Electron Devices. 35(12). 2441–2442. 11 indexed citations

10.

Nguyen, L.D., D.C. Radulescu, P.J. Tasker, W. J. Schaff, & L.F. Eastman. (1988). 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz. IEEE Electron Device Letters. 9(8). 374–376. 37 indexed citations

11.

Wicks, G. W., et al.. (1988). Use of Raman spectroscopy to examine the effects of growth stops on the interfaces of superlattices grown by molecular beam epitaxy. Applied Physics Letters. 52(7). 570–572. 5 indexed citations

12.

Radulescu, D.C., et al.. (1988). A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET. IEEE Electron Device Letters. 9(1). 4–6. 38 indexed citations

13.

Radulescu, D.C., G. W. Wicks, W. J. Schaff, A. R. Calawa, & L.F. Eastman. (1988). Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 615–616. 2 indexed citations

14.

Radulescu, D.C., G. W. Wicks, W. J. Schaff, A. R. Calawa, & L.F. Eastman. (1988). Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy. Journal of Applied Physics. 63(10). 5115–5120. 26 indexed citations

15.

Nguyen, L.D., D.C. Radulescu, P.J. Tasker, M. Foisy, & L.F. Eastman. (1988). Influence of quantum well width on DC and RF device performance in pseudomorphic Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As MODFETs. IEEE Transactions on Electron Devices. 35(12). 2451–2452. 1 indexed citations

16.

Radulescu, D.C., G. W. Wicks, W. J. Schaff, A. R. Calawa, & L.F. Eastman. (1987). Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial-grown GaAs/AlGaAs modulation-doped quantum-well structures. Journal of Applied Physics. 62(3). 954–960. 23 indexed citations

17.

Radulescu, D.C., et al.. (1987). Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper). IEEE Transactions on Microwave Theory and Techniques. 35(12). 1456–1460. 8 indexed citations

18.

Radulescu, D.C., W. J. Schaff, G. W. Wicks, A. R. Calawa, & L.F. Eastman. (1987). Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy. Applied Physics Letters. 51(26). 2248–2250. 7 indexed citations

19.

Radulescu, D.C., et al.. (1987). IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p⁺-GaAs buffer layers. IEEE Transactions on Electron Devices. 34(11). 2356–2357. 8 indexed citations

20.

Radulescu, D.C., G. W. Wicks, W. J. Schaff, A. R. Calawa, & L.F. Eastman. (1987). Anisotropic transport in modulation-doped quantum-well structures. Journal of Applied Physics. 61(6). 2301–2306. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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