G. Bosman

2.3k citations
114 papers · 1.9k · h-index 25

Impact in

    • GaN-based semiconductor devices and materials
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Advanced Semiconductor Detectors and Materials
    • Radio Frequency Integrated Circuit Design

Papers in

G. Bosman

110 papers receiving 1.8k citations

Peers

G. Bosman
Comparison fields: 5 of 33
  • Condensed Matter Physics 145
  • Electrical and Electronic Engineering 699
  • Materials Chemistry 297
  • Atomic and Molecular Physics, and Optics 152
  • Biomedical Engineering 53
Replace Salvatore Di Franco with:
Salvatore Di Franco Italy
J. W. Farmer United States
Tillmann Kubis United States
Andrew Grant United Kingdom
Roland Pässler Germany
Janne K. Viljas Germany
D.M. Hofmann Germany
T.G.M. Kleinpenning Netherlands
J. T. Cheung United States
Paul B. Klein United States
G. Bosman relative to Salvatore Di Franco Italy Salvatore Di Franco's profile →
Citations per field
00.5×1.5×1.8×
Salvatore Di Franco · 1×
Citations per year

Countries citing papers authored by G. Bosman

Since Specialization
Citations

This map shows the geographic impact of G. Bosman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Bosman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Bosman more than expected).

Fields of papers citing papers by G. Bosman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Bosman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Bosman. The network helps show where G. Bosman may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Bosman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Bosman Line = papers co-authored together G. Bosman links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 114 papers — load more, or switch the sort, to bring in the rest.

#Work
1 2005164
2 2014141
3 1981124
4 198879
5 198565
6 199364
7 200348
8 201548
9 198346
10 198643
11 198742
12 200641
13 201037
14 198235
15 200633
16 198031
17 200231
18 200331
19 199430
20 199029

About G. Bosman

G. Bosman is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Radiation, having authored 114 papers that have together received 1.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (10 papers), Advanced Semiconductor Detectors and Materials (9 papers), GaN-based semiconductor devices and materials (8 papers), Silicon Nanostructures and Photoluminescence (5 papers), Silicon Carbide Semiconductor Technologies (4 papers), Radioactive Decay and Measurement Techniques (3 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (145 citations), Electrical and Electronic Engineering (699 citations), Materials Chemistry (297 citations), Atomic and Molecular Physics, and Optics (152 citations) and Biomedical Engineering (53 citations). G. Bosman has collaborated with scholars based in United States, Netherlands and Belgium. Frequent co-authors include Aldert van der Ziel, R.J.J. Zijlstra, C. M. Van Vliet, Zhiliang Chen, Arthur D. van Rheenen, Yanbin An, Ant Ural, Jonghwan Lee, Sayed Hasan and Ali Javey. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices, Solid-State Electronics, Applied Physics Letters and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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