A. Vertiatchikh

1.6k total citations
29 papers, 1.3k citations indexed

About

A. Vertiatchikh is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Vertiatchikh has authored 29 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Vertiatchikh's work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (14 papers) and Radio Frequency Integrated Circuit Design (10 papers). A. Vertiatchikh is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (14 papers) and Radio Frequency Integrated Circuit Design (10 papers). A. Vertiatchikh collaborates with scholars based in United States, Germany and Ukraine. A. Vertiatchikh's co-authors include L.F. Eastman, Radislav A. Potyrailo, Helen Ghiradella, K. Dovidenko, Eric J. Olson, James R. Cournoyer, V. Tilak, J. R. Shealy, J. Liberis and A. Matulionis and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Vertiatchikh

29 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Vertiatchikh United States 16 753 707 557 284 264 29 1.3k
K. Dovidenko United States 13 415 0.6× 214 0.3× 335 0.6× 277 1.0× 496 1.9× 45 1.1k
Kenneth Järrendahl Sweden 22 464 0.6× 281 0.4× 259 0.5× 289 1.0× 614 2.3× 99 1.6k
D. Peyrade France 21 659 0.9× 209 0.3× 805 1.4× 256 0.9× 239 0.9× 60 1.4k
Po-Tsung Lee Taiwan 23 1.2k 1.6× 459 0.6× 841 1.5× 468 1.6× 592 2.2× 118 2.0k
S. I. Khartsev Sweden 23 1.1k 1.5× 338 0.5× 755 1.4× 840 3.0× 831 3.1× 115 2.0k
Tetsuya Tada Japan 20 634 0.8× 249 0.4× 442 0.8× 83 0.3× 567 2.1× 83 1.5k
Martin D. B. Charlton United Kingdom 25 1.1k 1.5× 136 0.2× 1.0k 1.9× 630 2.2× 648 2.5× 127 2.2k
Matthew R. Jorgensen Germany 17 431 0.6× 75 0.1× 461 0.8× 115 0.4× 163 0.6× 35 926
Kristen Constant United States 19 456 0.6× 66 0.1× 400 0.7× 128 0.5× 356 1.3× 45 1.0k
Shuang Zhou China 19 200 0.3× 495 0.7× 353 0.6× 665 2.3× 293 1.1× 42 1.4k

Countries citing papers authored by A. Vertiatchikh

Since Specialization
Citations

This map shows the geographic impact of A. Vertiatchikh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Vertiatchikh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Vertiatchikh more than expected).

Fields of papers citing papers by A. Vertiatchikh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Vertiatchikh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Vertiatchikh. The network helps show where A. Vertiatchikh may publish in the future.

Co-authorship network of co-authors of A. Vertiatchikh

This figure shows the co-authorship network connecting the top 25 collaborators of A. Vertiatchikh. A scholar is included among the top collaborators of A. Vertiatchikh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Vertiatchikh. A. Vertiatchikh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Potyrailo, Radislav A., Helen Ghiradella, A. Vertiatchikh, et al.. (2007). Morpho butterfly wing scales demonstrate highly selective vapour response. Nature Photonics. 1(2). 123–128. 461 indexed citations
2.
Vertiatchikh, A., E.B. Kaminsky, Julie Teetsov, & Kevin Robinson. (2006). Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN. Solid-State Electronics. 50(7-8). 1425–1429. 32 indexed citations
3.
Tilak, V., et al.. (2006). Piezoresistive and piezoelectric effects in GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2307–2311. 17 indexed citations
4.
Lü, H. J., Peter Sandvik, A. Vertiatchikh, Jesse B. Tucker, & Ahmed Elasser. (2006). High temperature Hall effect sensors based on AlGaN∕GaN heterojunctions. Journal of Applied Physics. 99(11). 43 indexed citations
5.
Matulionis, A., J. Liberis, M. Ramonas, et al.. (2005). Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2585–2588. 14 indexed citations
6.
Matulionis, A., et al.. (2004). Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature. Semiconductor Science and Technology. 19(4). S421–S423. 23 indexed citations
7.
Vitusevich, S. А., Serhiy Danylyuk, N. Klein, et al.. (2004). LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION. International Journal of High Speed Electronics and Systems. 14(3). 762–768. 1 indexed citations
8.
Liberis, J., et al.. (2004). Self-heating and microwave noise in AlGaN/GaN. physica status solidi (a). 201(2). 203–206. 18 indexed citations
9.
Matulionis, A., J. Liberis, M. Ramonas, et al.. (2003). Electron drift velocity in AlGaN/GaN channel at high electric fields. Applied Physics Letters. 83(19). 4038–4040. 87 indexed citations
10.
Kim, Hyungtak, A. Vertiatchikh, Richard M. Thompson, et al.. (2003). Hot electron induced degradation of undoped AlGaN/GaN HFETs. Microelectronics Reliability. 43(6). 823–827. 24 indexed citations
11.
Vertiatchikh, A. & L.F. Eastman. (2003). Effect of drain-to-source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics. Electronics Letters. 39(11). 876–877. 4 indexed citations
12.
Danylyuk, Serhiy, S. А. Vitusevich, B. Pődör, et al.. (2003). The investigation of properties of electron transport in AlGaN/GaN heterostructures. Microelectronics Journal. 34(5-8). 575–577. 3 indexed citations
13.
Vitusevich, S. А., M. V. Petrychuk, N. Klein, et al.. (2003). Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment. MRS Proceedings. 764. 5 indexed citations
14.
Matulionis, A., J. Liberis, I. Matulionienė, et al.. (2003). Hot-phonon temperature and lifetime in a biasedAlxGa1−xN/GaNchannel estimated from noise analysis. Physical review. B, Condensed matter. 68(3). 90 indexed citations
15.
Rowland, L.B., E.B. Kaminsky, V. Tilak, et al.. (2003). Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors. Journal of Electronic Materials. 32(5). 388–394. 131 indexed citations
16.
Vertiatchikh, A. & L.F. Eastman. (2003). Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance. IEEE Electron Device Letters. 24(9). 535–537. 64 indexed citations
17.
Vitusevich, S. А., N. Klein, A. E. Belyaev, et al.. (2002). Radiation hardness of AlGaN/GaN based HEMTs. MRS Proceedings. 719. 5 indexed citations
18.
Vitusevich, S. А., Serhiy Danylyuk, N. Klein, et al.. (2002). Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors. Applied Physics Letters. 80(12). 2126–2128. 27 indexed citations
19.
Vitusevich, S. А., N. Klein, M. V. Petrychuk, et al.. (2002). Low‐Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ‐Ray Quanta. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 78–81. 3 indexed citations
20.
Vertiatchikh, A., L.F. Eastman, W. J. Schaff, & T. Prunty. (2002). Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor. Electronics Letters. 38(8). 388–389. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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