R. A. Stall

1.5k citations

66 papers · 1.1k indexed · h-index 20

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Condensed Matter Physics 32
- GaN-based semiconductor devices and materials 32
Surfaces, Coatings and Films 10
- Electron and X-Ray Spectroscopy Techniques 6

Co-authors: M. Schurman L.F. Eastman C. E. C. Wood B. D. Little K. Board V. Swaminathan Zhe Chuan Feng T. Salagaj
Journals: Applied Physics Letters (10 papers)Journal of Crystal Growth (8 papers)Journal of Electronic Materials (6 papers)Journal of Applied Physics (3 papers)Electronics Letters (3 papers)
Partner nations: United States South Korea Taiwan

In The Last Decade

R. A. Stall

62 papers receiving 1.1k citations

Peers

Countries citing papers authored by R. A. Stall

Since Specialization

Citations

This map shows the geographic impact of R. A. Stall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. A. Stall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. A. Stall more than expected).

Fields of papers citing papers by R. A. Stall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. A. Stall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. A. Stall. The network helps show where R. A. Stall may publish in the future.

Co-authors

The 25 scholars most cited alongside R. A. Stall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. A. Stall Line = papers co-authored together R. A. Stall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor MRS Proceedings ·E. Eshun, Crawford Taylor, Michael G. Spencer, Kevin Kornegay, Ian T. Ferguson, Alex Gurray, R. A. Stall	1999	4
2	Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope Materials science forum ·Zhe Chuan Feng, M. Schurman, C. A. Tran, T. Salagaj, B. Karlicek, Ian T. Ferguson, R. A. Stall, Chris Dyer, Kenneth P. J. Williams, G. D. Pitt	1998	3
3	Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition Journal of Applied Physics ·W. Shan, W. Walukiewicz, E. E. Häller, B. D. Little, J. J. Song, Matthew D. McCluskey, N. M. Johnson, Zhe Chuan Feng, M. Schurman, R. A. Stall	1998	121
4	High Pressure Study of III-Nitrides and Related Heterostructures MRS Proceedings ·W. Shan, Joel W. Ager, W. Walukiewicz, E. E. Häller, B. D. Little, J. J. Song, B. Goldenberg, Zhe Chuan Feng, M. Schurman, R. A. Stall	1997	0
5	Microstructure and properties of PbZr_1-xTi_xO₃ thin films made by one and two step metalorganic chemical vapor deposition Integrated ferroelectrics ·Tianran Li, P. Zawadzki, R. A. Stall	1997	12
6	Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN Journal of Electronic Materials ·Chawon Hwang, M. Schurman, W. E. Mayo, Y.C. Lu, R. A. Stall, T. Salagaj	1997	61
7	Temperature dependence of energy gap in GaN thin film studied by thermomodulation Applied Physics Letters ·Yuli Li, Y. Lu, Hao Shen, M. Wraback, Michael G.C. Brown, M. Schurman, L. A. Koszi, R. A. Stall	1997	20
8	Pressure-dependent photoluminescence study of InxGa1−xN Applied Physics Letters ·W. Shan, J. J. Song, Zhe Chuan Feng, M. Schurman, R. A. Stall	1997	18
9	Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor Journal of Electronic Materials ·C. YUAN, T. Salagaj, W. Kroll, R. A. Stall, M. Schurman, Chawon Hwang, Yuli Li, W. E. Mayo, Yicheng Lu, S. Krishnankutty, R. M. Kolbas	1996	8
10	Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters MRS Proceedings ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, M. N. Horton, Nathan Perkins, T. W. Weeks, H. Liu, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1996	2
11	The Role of Impurities in LP-MOCVD Grown Gallium Nitride MRS Proceedings ·Chawon Hwang, Yuli Li, M. Schurman, W. E. Mayo, Yi‐Hsuan Lu, R. A. Stall	1995	3
12	Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials Materials Science and Engineering B ·Robert C. Walker, A. Gurary, Chen Yuan, P. Zawadzki, K. Moy, T. Salagaj, Alan Thompson, W.J. Krolla, R. A. Stall, N. E. Schumaker	1995	4
13	Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor Journal of Electronic Materials ·A. Gurary, Alan Thompson, R. A. Stall, W. Kroll, N. E. Schumaker	1995	1
14	Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE Journal of Crystal Growth ·M.A. McKee, ByungIn Yoo, R. A. Stall	1992	12
15	MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk Journal of Crystal Growth ·Gary S. Tompa, T. Salagaj, L. W. Cook, R. A. Stall, C. R. Nelson, P. Anderson, W. H. Wright, W. L. Ahlgren, S. M. Johnson	1991	10
16	Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD Journal of Crystal Growth ·M.A. McKee, P. Norris, R. A. Stall, Gary S. Tompa, C. S. Chern, D. W. Noh, San Kang, T.J. Jasinski	1991	9
17	Carbon in molecular beam epitaxial GaAs Applied Physics Letters ·G. B. Stringfellow, R. A. Stall, W. Koschel	1981	22
18	Ballistic electron motion in GaAs at room temperature Electronics Letters ·L.F. Eastman, R. A. Stall, D. W. Woodard, N. Dandekar, C. E. C. Wood, M. S. Shur, K. Board	1980	45
19	Dependence of the electrical characteristics of heavily Ge-doped GaAs on molecular beam epitaxy growth parameters Applied Physics Letters ·G. Metze, R. A. Stall, C. E. C. Wood, L.F. Eastman	1980	15
20	A molybdenium source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy Solid-State Electronics ·William J. Devlin, C. E. C. Wood, R. A. Stall, L.F. Eastman	1980	19

About R. A. Stall

R. A. Stall is a scholar working on Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 66 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Semiconductor materials and devices (23 papers), Semiconductor Quantum Structures and Devices (21 papers), Ga2O3 and related materials (13 papers), Metal and Thin Film Mechanics (9 papers), ZnO doping and properties (9 papers), Electron and X-Ray Spectroscopy Techniques (6 papers) and Advanced Semiconductor Detectors and Materials (6 papers). The work is most often cited by research in Condensed Matter Physics (571 citations), Atomic and Molecular Physics, and Optics (625 citations), Electronic, Optical and Magnetic Materials (283 citations), Electrical and Electronic Engineering (614 citations) and Materials Chemistry (366 citations). R. A. Stall has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include M. Schurman, L.F. Eastman, C. E. C. Wood, B. D. Little, K. Board, V. Swaminathan, Zhe Chuan Feng, T. Salagaj, Chawon Hwang and N. E. Schumaker. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Journal of Applied Physics and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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