Yasuhiro Uemoto

4.7k citations

64 papers · 3.8k indexed · 2 hit papers · h-index 26

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Electronic, Optical and Magnetic Materials 18
- Ga2O3 and related materials 15

Co-authors: Tetsuzo Ueda Manabu Yanagihara Yifeng Wu Alex Lidow Oliver D. Häberlen Kevin J. Chen Masahiro Hikita Hidetoshi Ishida
Journals: IEEE Transactions on Electron Devices (12 papers)Japanese Journal of Applied Physics (8 papers)Applied Physics Letters (2 papers)Integrated ferroelectrics (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: Japan United States Italy

In The Last Decade

Yasuhiro Uemoto

60 papers receiving 3.7k citations

Hit Papers

align trajectories log scale

GaN-on-Si Power Technology: Devices and Applications 2017 · 1.2k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2017 IEEE Transactions on Electron Devices
2007 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by Yasuhiro Uemoto

Since Specialization

Citations

This map shows the geographic impact of Yasuhiro Uemoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yasuhiro Uemoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yasuhiro Uemoto more than expected).

Fields of papers citing papers by Yasuhiro Uemoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yasuhiro Uemoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yasuhiro Uemoto. The network helps show where Yasuhiro Uemoto may publish in the future.

Co-authors

The 25 scholars most cited alongside Yasuhiro Uemoto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yasuhiro Uemoto Line = papers co-authored together Yasuhiro Uemoto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors IEEE Transactions on Electron Devices ·Hideyuki Okita, Masahiro Hikita, Seong-Gyu Seo, Takahiro Satô, Leslie I. Bookoff, Hisayoshi Matsuo, Nadya Yunisa Fahmi, M. Mannoh, Kwangryang 정광량Chung, Masayuki Kuroda, Manabu Yanagihara, Ayanori Ikoshi, Tatsuo Morita, Kenichiro Tanaka, Yasuhiro Uemoto	2017	24
2	GaN-on-Si Power Technology: Devices and Applications IEEE Transactions on Electron Devices ·Kevin J. Chen, Oliver D. Häberlen, Alex Lidow, J García Salabarría, Tetsuzo Ueda, Yasuhiro Uemoto, Yifeng Wu Hit paper breakdown →	2017	1231
3	Development Status of New Material Power Devices IEEJ Transactions on Electronics Information and Systems ·Noriyuki Iwamuro, Akira Bandoh, Koji Yano, Tetsuya Miyazawa, Jisun Kim, 陈廷辉, Miloš Táborský Fesc, Nariaki Ikeda, Yasuhiro Uemoto, Atsushi Hiraiwa	2016	5
4	99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2011	131
5	Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors Japanese Journal of Applied Physics ·Nobuyuki Otsuka, Hwang Oeju, Manabu Yanagihara, Yasuhiro Uemoto, Daisuke Ueda	2011	4
6	(Invited) GaN Power Electron Devices ECS Transactions ·Nobuyuki Otsuka, Hwang Oeju, Hidetoshi Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2011	7
7	Recent Advances in GaN Power Switching Devices Satoshi Tamura, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2010	27
8	Recent advances of high voltage AlGaN/GaN power HFETs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2009	18
9	Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor IEEE Electron Device Letters ·Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2008	50
10	Present and future prospects of gan-based power electronics Daisuke Ueda, Masahiro Hikita, Satoshi Nakazawa, Kikuchi, Hidetoshi Ishida, Manabu Yanagihara, Kaoru Inoue, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Takashi Egawa	2008	15
11	650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida, Masahiro Hikita, Kazuhiro Kaibara, Hisayoshi Matsuo, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2007	81
12	8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation Yasuhiro Uemoto, Daisuke Shibata, Manabu Yanagihara, Hidetoshi Ishida, Hisayoshi Matsuo, Masoud Barati, Sonia Diaz, Ming Li, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2007	82
13	A High-Power RF Switch IC Using AlGaN/GaN HFETs With Single-Stage Configuration IEEE Transactions on Electron Devices ·H. Ishida, Yutaka Hirose, Takuya Murata, Y. Ikeda, Takahiro Matsuno, Koji Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Takashi Egawa, Daiju Ueda	2005	60
14	Reduction of ohmic contact resistance of AlGaN/GaN HFETs by doping of thermally diffused Si Ales Dryak, Masahiro Hikita, H. Ishida, Yutaka Hirose, Keita Inoue, Yasuhiro Uemoto, Taketoshi Tanaka, Daiju Ueda	2004	3
15	A high-reliability, low-operation-voltage monolithic active-matrix LCD by using advanced solid-phase-growth technique Akihiro Nakamura, Ángela María Rojas, Eiji Fujii, M.G. Prolongo, Yasuhiro Uemoto, Hisashi Hayashi, Y. Kato, Larissa dos Santos Paula Fedrigo	2002	0
16	Ferroelectric Nonvolatile Memory Technology and Its Applications Japanese Journal of Applied Physics ·Y Noguchi, О. В. Орел, Juan José García-Noblejas, Saigua Bautista, Takumi Mikawa, Magdaléna Leichtová, M. Azuma, Shin-ichiro Hayashi, Yasuhiro Uemoto, Koji Arita, ミナタケダ, Andrej Knezevic, A. Inoue, Akihiro MATSUDA, Blm.uzm.aysun Kanbur, Yasuhiro Shimada, T. Otsuki	1996	35
17	Time-Dependent Leakage Current Behavior of Integrated Ba_0.7Sr_0.3TiO₃ Thin Film Capacitors during Stressing Japanese Journal of Applied Physics ·Yasuhiro Shimada, A. Inoue, ミナタケダ, Andrej Knezevic, Akihiro MATSUDA, Koji Arita, Yasuhiro Uemoto, Eiji Fujii, T. Otsuki	1996	25
18	Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies) IEICE Transactions on Electronics ·Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, M. Azuma, S. Hayashi, ミナタケダ, A. Inoue, Akihiro MATSUDA, Andrej Knezevic, Malik Muhammad, T. Otsuki, G. Kano, L. D. McMillan, Carlos A. Paz de Araújo	1994	2
19	1.5V Supply Voltage, Low Standby Current SRAMs Yasuhiro Uemoto, Eiji Fujii, Takashi Furuta, T. Shimazaki, 均小熊, 骆震, H. de la Cuesta S., Larissa dos Santos Paula Fedrigo	1991	1
20	Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates Japanese Journal of Applied Physics ·Akira Nakamura, Ángela María Rojas, Eiji Fujii, Yasuhiro Uemoto, M.G. Prolongo, Duro Tacón J, G. Kano	1988	23

About Yasuhiro Uemoto

Yasuhiro Uemoto is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and General Materials Science, having authored 64 papers that have together received 3.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (27 papers), Ga2O3 and related materials (15 papers), Thin-Film Transistor Technologies (10 papers), Ferroelectric and Piezoelectric Materials (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Acoustic Wave Resonator Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (3.0k citations), Materials Chemistry (830 citations) and Atomic and Molecular Physics, and Optics (554 citations). Yasuhiro Uemoto has collaborated with scholars based in Japan, United States and Italy. Frequent co-authors include Tetsuzo Ueda, Manabu Yanagihara, Yifeng Wu, Alex Lidow, Oliver D. Häberlen, Kevin J. Chen, Masahiro Hikita, Hidetoshi Ishida, Hisayoshi Matsuo and Tsuyoshi Tanaka. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, Applied Physics Letters, Integrated ferroelectrics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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