R. Behtash

503 total citations
21 papers, 412 citations indexed

About

R. Behtash is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Behtash has authored 21 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 21 papers in Electrical and Electronic Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Behtash's work include GaN-based semiconductor devices and materials (21 papers), Radio Frequency Integrated Circuit Design (13 papers) and Semiconductor materials and devices (8 papers). R. Behtash is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Radio Frequency Integrated Circuit Design (13 papers) and Semiconductor materials and devices (8 papers). R. Behtash collaborates with scholars based in Germany, Netherlands and France. R. Behtash's co-authors include W. Heinrich, G. Tränkle, Joachim Würfl, Matthias Rudolph, Ralf Doerner, H. Leier, H. Blanck, Martin Neuburger, F. Natali and J. Massies and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, Electronics Letters and Semiconductor Science and Technology.

In The Last Decade

R. Behtash

21 papers receiving 390 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Behtash Germany 12 378 364 89 62 31 21 412
Hua-Quen Tserng United States 8 448 1.2× 396 1.1× 119 1.3× 93 1.5× 27 0.9× 16 501
Martin Fagerlind Sweden 10 339 0.9× 317 0.9× 85 1.0× 93 1.5× 32 1.0× 20 377
F. Lecourt France 9 269 0.7× 289 0.8× 62 0.7× 101 1.6× 44 1.4× 21 345
Chunjiang Ren China 8 338 0.9× 322 0.9× 82 0.9× 37 0.6× 17 0.5× 16 368
Mattias Südow Sweden 10 390 1.0× 228 0.6× 65 0.7× 18 0.3× 23 0.7× 19 405
E. Chartier France 13 476 1.3× 293 0.8× 156 1.8× 53 0.9× 27 0.9× 50 513
David Kopp United States 7 250 0.7× 251 0.7× 81 0.9× 146 2.4× 26 0.8× 12 342
Stephan Maroldt Germany 9 304 0.8× 219 0.6× 71 0.8× 69 1.1× 20 0.6× 28 348
E. Delos France 9 252 0.7× 203 0.6× 88 1.0× 99 1.6× 42 1.4× 21 319
Timothy Boles United States 10 248 0.7× 184 0.5× 67 0.8× 66 1.1× 21 0.7× 37 302

Countries citing papers authored by R. Behtash

Since Specialization
Citations

This map shows the geographic impact of R. Behtash's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Behtash with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Behtash more than expected).

Fields of papers citing papers by R. Behtash

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Behtash. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Behtash. The network helps show where R. Behtash may publish in the future.

Co-authorship network of co-authors of R. Behtash

This figure shows the co-authorship network connecting the top 25 collaborators of R. Behtash. A scholar is included among the top collaborators of R. Behtash based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Behtash. R. Behtash is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lambert, Benoît, R. Behtash, H. Jung, et al.. (2012). Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification. Microelectronics Reliability. 52(9-10). 2200–2204. 17 indexed citations
2.
Blanck, H., R. Behtash, Peter Brückner, et al.. (2010). Industrial GaN FET technology. International Journal of Microwave and Wireless Technologies. 2(1). 21–32. 12 indexed citations
3.
Baeumler, M., V. M. Polyakov, Markus Cäsar, et al.. (2010). Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy. Journal of Electronic Materials. 39(6). 756–760. 18 indexed citations
4.
Beilenhoff, K., H. Blanck, R. Behtash, et al.. (2010). GaN technologies and developments: Status and trends. 488–491. 5 indexed citations
5.
Leber, Phyllis A., et al.. (2010). Change of the material properties of Ni, Pt and Au thin films and thin film stacks for GaN Schottky contacts during thermal processing. Semiconductor Science and Technology. 25(9). 95009–95009. 3 indexed citations
6.
Dammann, M., W. Pletschen, Patrick Waltereit, et al.. (2009). Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability. 49(5). 474–477. 24 indexed citations
7.
Dammann, M., Markus Cäsar, Patrick Waltereit, et al.. (2009). Reliability of AlGaN/GaN HEMTs under DC- and RF-operation. 19–32. 6 indexed citations
8.
Behtash, R., et al.. (2009). Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 37 indexed citations
9.
Behtash, R., et al.. (2008). The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs. 1–4. 2 indexed citations
10.
Dammann, M., W. Pletschen, Patrick Waltereit, et al.. (2008). Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. 29. 25–44. 5 indexed citations
11.
Meliani, Chafik, R. Behtash, Joachim Würfl, W. Heinrich, & G. Tränkle. (2007). A Broadband GaN-MMIC power amplifier for L to X Bands. 147–150. 11 indexed citations
12.
Rudolph, Matthias, R. Behtash, Ralf Doerner, et al.. (2007). Analysis of the Survivability of GaN Low-Noise Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 55(1). 37–43. 128 indexed citations
13.
Behtash, R., et al.. (2006). A Compact 16 Watt X-Band GaN-MMIC Power Amplifier. 1846–1849. 20 indexed citations
14.
Schuh, Patrick, R. Leberer, Martin Oppermann, et al.. (2006). 20W GaN HPAs for Next Generation X-Band T/R-Modules. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 726–729. 23 indexed citations
15.
Würfl, Joachim, R. Behtash, R. Lossy, et al.. (2006). Advances in GaN-based discrete power devices for L- and X-band applications. 1716–1718. 7 indexed citations
16.
Rudolph, Matthias, et al.. (2006). A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier. 1899–1902. 20 indexed citations
17.
Würfl, Joachim, R. Behtash, R. Lossy, et al.. (2006). Advances in GaN-based discrete power devices for L- and X-band applications. 490–492. 1 indexed citations
18.
Behtash, R., Volker Ziegler, H. Leier, et al.. (2004). MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz. Electronics Letters. 40(9). 564–566. 2 indexed citations
19.
Behtash, R., Volker Ziegler, H. Leier, et al.. (2004). Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band. TUbilio (Technical University of Darmstadt). 1657–1659. 13 indexed citations
20.
Leier, H., R. Behtash, Andrei Vescan, et al.. (2001). RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire. AMS Acta (University of Bologna). 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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