E. Richter

1.1k total citations
69 papers, 919 citations indexed

About

E. Richter is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. Richter has authored 69 papers receiving a total of 919 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Condensed Matter Physics, 41 papers in Electrical and Electronic Engineering and 34 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. Richter's work include GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (34 papers) and Semiconductor materials and devices (28 papers). E. Richter is often cited by papers focused on GaN-based semiconductor devices and materials (54 papers), Ga2O3 and related materials (34 papers) and Semiconductor materials and devices (28 papers). E. Richter collaborates with scholars based in Germany, India and United States. E. Richter's co-authors include M. Weyers, G. Tränkle, U. Zeimer, Ch. Hennig, Anna Mogilatenko, Carsten Netzel, Sylvia Hagedorn, Frank Brunner, K. Irmscher and Franziska C. Beyer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

E. Richter

66 papers receiving 887 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Richter Germany	17	724	456	445	418	228	69	919
Satoru Nagao Japan	10	623 0.9×	364 0.8×	348 0.8×	340 0.8×	263 1.2×	21	786
C. H. Kuo Taiwan	17	715 1.0×	433 0.9×	573 1.3×	345 0.8×	234 1.0×	46	935
A. E. Nikolaev Russia	18	900 1.2×	423 0.9×	460 1.0×	458 1.1×	266 1.2×	107	1.1k
C. J. Tun Taiwan	17	546 0.8×	414 0.9×	499 1.1×	333 0.8×	153 0.7×	46	781
K. Hazu Japan	15	550 0.8×	376 0.8×	318 0.7×	258 0.6×	167 0.7×	48	724
A. Usui Japan	11	644 0.9×	365 0.8×	334 0.8×	334 0.8×	184 0.8×	24	745
Tomoyuki Tanikawa Japan	17	699 1.0×	376 0.8×	356 0.8×	290 0.7×	262 1.1×	80	840
Takehiro Yoshida Japan	22	1.0k 1.4×	605 1.3×	469 1.1×	789 1.9×	250 1.1×	56	1.3k
S.J. Chang Taiwan	16	612 0.8×	298 0.7×	342 0.8×	417 1.0×	220 1.0×	48	812

Countries citing papers authored by E. Richter

Since Specialization

Citations

This map shows the geographic impact of E. Richter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Richter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Richter more than expected).

Fields of papers citing papers by E. Richter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Richter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Richter. The network helps show where E. Richter may publish in the future.

Co-authorship network of co-authors of E. Richter

This figure shows the co-authorship network connecting the top 25 collaborators of E. Richter. A scholar is included among the top collaborators of E. Richter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Richter. E. Richter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lyons, John L., K. Irmscher, E. Richter, et al.. (2022). Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect. Physical review. B.. 106(18). 2 indexed citations

Beyer, Jan, Franziska C. Beyer, K. Irmscher, et al.. (2021). A carbon-doping related luminescence band in GaN revealed by below bandgap excitation. Journal of Applied Physics. 130(5). 11 indexed citations

Beyer, Jan, Christian Röder, Franziska C. Beyer, et al.. (2021). Current Status of Carbon‐Related Defect Luminescence in GaN. physica status solidi (a). 218(20). 33 indexed citations

Hagedorn, Sylvia, et al.. (2020). Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy. Semiconductor Science and Technology. 35(3). 35028–35028. 1 indexed citations

Richter, E., et al.. (2020). Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects. Journal of Applied Physics. 127(20). 13 indexed citations

Richter, E., et al.. (2018). Influence of quartz on silicon incorporation in HVPE grown AlN. Journal of Crystal Growth. 507. 295–298. 2 indexed citations

Ding, Li, Veit Hoffmann, E. Richter, et al.. (2017). MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates. Journal of Crystal Growth. 478. 212–215. 19 indexed citations

Hagedorn, Sylvia, A. Knauer, Anna Mogilatenko, E. Richter, & M. Weyers. (2016). AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs. physica status solidi (a). 213(12). 3178–3185. 38 indexed citations

Richter, E., et al.. (2016). Triangular-shaped sapphire patterning for HVPE grown AlGaN layers. physica status solidi (a). 214(9). 1600751–1600751. 2 indexed citations

10.

Richter, E., et al.. (2015). Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN. physica status solidi (b). 252(5). 1180–1188. 3 indexed citations

11.

Feneberg, Martin, Karsten Lange, Christian Lidig, et al.. (2014). Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3. Physical Review B. 90(7). 142 indexed citations

12.

Mogilatenko, Anna, et al.. (2013). Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates. Journal of Crystal Growth. 371. 45–49. 32 indexed citations

13.

Neumann, Wolfgang, Anna Mogilatenko, Tim Wernicke, et al.. (2009). Structure investigations of nonpolar GaN layers. Journal of Microscopy. 237(3). 308–313. 10 indexed citations

14.

Hagedorn, Sylvia, E. Richter, Carsten Netzel, et al.. (2009). HVPE growth of Al_xGa_1–xN alloy layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 6 indexed citations

15.

Richter, E., Frank Brunner, A. Denker, et al.. (2008). Irradiation effects on AlGaN HFET devices and GaN layers. Journal of Materials Science Materials in Electronics. 19(S1). 64–67. 1 indexed citations

16.

Zeimer, U., Frank Brunner, E. Richter, et al.. (2007). Study of in-depth strain variation in ion-irradiated GaN. Journal of Materials Science Materials in Electronics. 19(S1). 68–72. 1 indexed citations

17.

Zeimer, U., M. Weyers, Joachim Würfl, et al.. (2006). Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices. IEEE Transactions on Nuclear Science. 53(6). 3661–3666. 41 indexed citations

18.

Ressel, P., P. H. Hao, W. Österle, et al.. (2000). Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties. Journal of Electronic Materials. 29(7). 964–972. 1 indexed citations

19.

Kurpas, P., et al.. (1998). Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy. Journal of Crystal Growth. 195(1-4). 217–222. 1 indexed citations

20.

Richter, E., et al.. (1997). Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors. Materials Science and Engineering B. 44(1-3). 337–340. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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