D. J. Wallis

5.5k citations

152 papers · 3.4k indexed · h-index 30

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 94
- GaN-based semiconductor devices and materials 94
Electrical and Electronic Engineering 111
- Semiconductor materials and devices 68
- Silicon Carbide Semiconductor Technologies 18
- Advancements in Semiconductor Devices and Circuit Design 16

Co-authors: C. J. Humphreys Dandan Zhu Michael J. Uren K.P. Hilton P. H. Gaskell Martin Kuball T. Martin Trevor Martin
Journals: Journal of Applied Physics (23 papers)Semiconductor Science and Technology (9 papers)Applied Physics Letters (8 papers)Journal of Crystal Growth (7 papers)Journal of Physics D Applied Physics (6 papers)
Partner nations: United Kingdom United States China

In The Last Decade

D. J. Wallis

145 papers receiving 3.3k citations

Peers

Countries citing papers authored by D. J. Wallis

Since Specialization

Citations

This map shows the geographic impact of D. J. Wallis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Wallis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Wallis more than expected).

Fields of papers citing papers by D. J. Wallis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Wallis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Wallis. The network helps show where D. J. Wallis may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. J. Wallis, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. J. Wallis Line = papers co-authored together D. J. Wallis links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells Journal of Physics D Applied Physics ·Xiuyuan Xu, Jesús López Garañeda, Martin Frentrup, F Solomon, Menno J. Kappers, Gunnar Kusch, D. J. Wallis, Rachel A. Oliver, David J. Binks	2025	0
2	Buffer‐Less Gallium Nitride High Electron Mobility Heterostructures on Silicon Advanced Materials ·Sandro Simioni, Martin Frentrup, A. Hinz, James W. Pomeroy, D. Field, D. J. Wallis, Martin Kuball, Rachel A. Oliver	2025	5
3	Beyond transmission electron microscopy imaging: Atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes Materialia ·F. A. Grene, Rachel A. Oliver, Martin Frentrup, Menno J. Kappers, Huixin Xiu, Gunnar Kusch, D. J. Wallis, Christina Hofer, Paul A.J. Bagot, Michael P. Moody	2025	1
4	A Circuit for Evaluating GaN HEMT Dynamic R_ds(on) at Cryogenic Temperatures ORCA Online Research @Cardiff (Cardiff University) ·C.‐J. Richard Shi, 凌静, Duleepa J. Thrimawithana, Yuyang Liu, Heincz Mc, 陈泽灵, Rachel A. Oliver, D. J. Wallis, Rodney A. Badcock	2024	0
5	Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well Nanotechnology ·Abhiram Gundimeda, Gunnar Kusch, Martin Frentrup, Menno J. Kappers, D. J. Wallis, Rachel A. Oliver	2024	3
6	Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well Journal of Physics D Applied Physics ·Abhiram Gundimeda, Gunnar Kusch, Martin Frentrup, Huixin Xiu, F. A. Grene, Christina Hofer, Paul A.J. Bagot, Michael P. Moody, Menno J. Kappers, D. J. Wallis, Rachel A. Oliver	2024	2
7	GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft Superconductor Science and Technology ·Heincz Mc, Duleepa J. Thrimawithana, Lei Zhao, Martin Neuburger, Rachel A. Oliver, D. J. Wallis	2023	10
8	Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide Ultramicroscopy ·Gabby Ferrara, Sandro Simioni, Yuyang Liu, Menno J. Kappers, D. J. Wallis, Rachel A. Oliver	2023	4
9	A cross-linkable, organic down-converting material for white light emission from hybrid LEDs Journal of Materials Chemistry C ·端三輪, Jochen Bruckbauer, 有世上野, Alexander L. Kanibolotsky, Joseph Cameron, D. J. Wallis, Robert Martin, Peter J. Skabara	2023	6
10	Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD Semiconductor Science and Technology ·Sandro Simioni, A. Hinz, Martin Frentrup, Haniyeh Shariatmadary, D. J. Wallis, Rachel A. Oliver	2023	19
11	Alloy segregation at stacking faults in zincblende GaN heterostructures Journal of Applied Physics ·Nabila Dwi Olivia, Martin Frentrup, Simon M. Fairclough, Menno J. Kappers, Manish Jain, András Kovács, D. J. Wallis, Rachel A. Oliver	2020	16
12	A poly(urethane)-encapsulated benzo[2,3-d:6,7-d′]diimidazole organic down-converter for green hybrid LEDs Materials Chemistry Frontiers ·Alan A. Wiles, Jochen Bruckbauer, Thayse da Silva. Lima, Raúl Villanueva‐Romero, Joseph Cameron, Neil J. Findlay, 木村圭佑, D. J. Wallis, Robert Martin, Peter J. Skabara, Graeme Cooke	2020	7
13	Thin film Gallium nitride (GaN) based acoustofluidic Tweezer: Modelling and microparticle manipulation Ultrasonics ·Marinkie Madiope, Vuong Chi Cuong, Yongqing Fu, D. J. Wallis, 裕一真保, Fan Yuan, Dongfang Liang, Zhihua Xie, Hanlin Wang, Ran Tao, Ming Hong Shen, Jian Yang, Sophia Schleifer, Zhenlin Wu, P. Tarazona, Huaixing Cang, Xin Yang	2020	13
14	Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs Journal of Applied Physics ·佳代冨山, Teena Patel, Kristiawan Juan, Ivor Guiney, HJ Groen, Sheng Jiang, Angéla Filankembo Kava, Penglei Li, D. J. Wallis, C. J. Humphreys, Paul R. Chalker, P.A. Houston	2018	7
15	Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors Journal of Applied Physics ·Fengzai Tang, Jose Luis Ocana-Monroy, Ivor Guiney, Martin Frentrup, J. S. Barnard, Giorgio Divitini, 佳代冨山, T. Martin, Paul A.J. Bagot, Michael P. Moody, C. J. Humphreys, P.A. Houston, Rachel A. Oliver, D. J. Wallis	2018	3
16	High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications IEEE Microwave and Wireless Components Letters ·K.O. Al Sané, X. Li, D. J. Wallis, Ivor Guiney, K. Elgaid	2018	10
17	Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology IEEE Microwave and Wireless Components Letters ·K.O. Al Sané, Erna Trianggorowati, X. Li, D. J. Wallis, Ivor Guiney, K. Elgaid	2016	7
18	Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC ORCA Online Research @Cardiff (Cardiff University) ·Erna Trianggorowati, K.O. Al Sané, Muchamad Fachruzi Riyandi, Alessandro Midolo, D. J. Wallis, Ivor Guiney, C. J. Humphreys, K. Elgaid	2016	1
19	Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold Journal of Applied Physics ·James T. Griffiths, Siyuan Zhang, Cali Anna, Dandan Zhu, Wai Yuen Fu, Cristina Corchero, Ian W. Boyd, Ю.А. Махова, D. J. Wallis, C. J. Humphreys, Rachel A. Oliver	2016	11
20	Light Emission from Highly Reflective Porous Silicon Multilayer Structures Journal of Porous Materials ·E.K. Squire, P. A. Snow, P. St. J. Russell, Leigh Canham, Andrew J. Simons, C.L. Reeves, D. J. Wallis	2000	10

About D. J. Wallis

D. J. Wallis is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Structural Biology and Atomic and Molecular Physics, and Optics, having authored 152 papers that have together received 3.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (94 papers), Semiconductor materials and devices (68 papers), Semiconductor Quantum Structures and Devices (29 papers), Ga2O3 and related materials (29 papers), Metal and Thin Film Mechanics (18 papers), Silicon Carbide Semiconductor Technologies (18 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and ZnO doping and properties (16 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (669 citations), Structural Biology (50 citations), Electrical and Electronic Engineering (1.9k citations) and Materials Chemistry (1.5k citations). D. J. Wallis has collaborated with scholars based in United Kingdom, United States and China. Frequent co-authors include C. J. Humphreys, Dandan Zhu, Michael J. Uren, K.P. Hilton, P. H. Gaskell, Martin Kuball, T. Martin, Trevor Martin, Rachel A. Oliver and Andrei Sarua. Their work appears in journals such as Journal of Applied Physics, Semiconductor Science and Technology, Applied Physics Letters, Journal of Crystal Growth and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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