M. Weyers

13.1k total citations · 2 hit papers
515 papers, 10.2k citations indexed

About

M. Weyers is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Weyers has authored 515 papers receiving a total of 10.2k indexed citations (citations by other indexed papers that have themselves been cited), including 323 papers in Electrical and Electronic Engineering, 290 papers in Condensed Matter Physics and 266 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Weyers's work include GaN-based semiconductor devices and materials (290 papers), Semiconductor Quantum Structures and Devices (221 papers) and Ga2O3 and related materials (151 papers). M. Weyers is often cited by papers focused on GaN-based semiconductor devices and materials (290 papers), Semiconductor Quantum Structures and Devices (221 papers) and Ga2O3 and related materials (151 papers). M. Weyers collaborates with scholars based in Germany, United States and India. M. Weyers's co-authors include Michael Kneissl, A. Knauer, Michio Sato, Tim Wernicke, U. Zeimer, Hiroaki Ando, S. Einfeldt, Tim Kolbe, Frank Brunner and V. Kueller and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and The Journal of Immunology.

In The Last Decade

M. Weyers

499 papers receiving 9.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

1992 633 citations M. Weyers et al. Japanese Journal of Applied Physics profile →
Advances in group III-nitride-based deep UV light-emitting diode technology

2010 571 citations Michael Kneissl, Tim Kolbe et al. Semiconductor Science and Technology profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
M. Weyers	6.2k	5.1k	4.2k	3.3k	3.1k	515	10.2k
E. Fred Schubert	6.7k 1.1×	4.3k 0.8×	4.2k 1.0×	3.0k 0.9×	4.3k 1.4×	153	10.0k
Russell D. Dupuis	5.8k 0.9×	6.2k 1.2×	5.4k 1.3×	3.2k 1.0×	3.2k 1.0×	510	11.0k
Nelson Tansu	5.0k 0.8×	3.2k 0.6×	3.6k 0.8×	2.0k 0.6×	2.8k 0.9×	224	7.5k
Jung Han	7.6k 1.2×	5.1k 1.0×	3.2k 0.8×	3.9k 1.2×	4.6k 1.5×	351	10.8k
Michael Kneissl	8.8k 1.4×	3.5k 0.7×	3.0k 0.7×	4.9k 1.5×	4.0k 1.3×	382	10.7k
H. Morkoç	6.1k 1.0×	4.9k 1.0×	3.9k 0.9×	3.2k 1.0×	4.1k 1.3×	206	10.0k
Satoshi Kamiyama	6.6k 1.1×	3.2k 0.6×	2.2k 0.5×	3.6k 1.1×	3.5k 1.1×	529	8.7k
Michael R. Krames	5.7k 0.9×	3.9k 0.8×	3.7k 0.9×	1.7k 0.5×	4.0k 1.3×	88	8.8k
Tien‐Chang Lu	4.1k 0.7×	4.4k 0.9×	3.4k 0.8×	2.2k 0.7×	4.3k 1.4×	546	9.4k
J. Y. Lin	10.3k 1.7×	6.0k 1.2×	4.2k 1.0×	6.1k 1.8×	9.7k 3.1×	438	17.9k

Countries citing papers authored by M. Weyers

Since Specialization

Citations

This map shows the geographic impact of M. Weyers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Weyers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Weyers more than expected).

Fields of papers citing papers by M. Weyers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Weyers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Weyers. The network helps show where M. Weyers may publish in the future.

Co-authorship network of co-authors of M. Weyers

This figure shows the co-authorship network connecting the top 25 collaborators of M. Weyers. A scholar is included among the top collaborators of M. Weyers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Weyers. M. Weyers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zainal, N., Sylvia Hagedorn, Tim Kolbe, et al.. (2025). Surface improvement of high temperature annealed Si-doped AlGaN layers. Materials Science in Semiconductor Processing. 200. 109949–109949.

Kolbe, Tim, Hyun Kyong Cho, Sylvia Hagedorn, et al.. (2024). 226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW. physica status solidi (RRL) - Rapid Research Letters. 18(11). 4 indexed citations

Winkelmann, Aimo, B. Hourahine, Feng Peng, et al.. (2023). Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction. Microscopy and Microanalysis. 29(6). 1879–1888. 2 indexed citations

Gupta, Priti, Martin Guttmann, Jan Ruschel, et al.. (2023). Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs. Applied Physics Letters. 122(15). 7 indexed citations

Guttmann, Martin, Neysha Lobo‐Ploch, F. Gindele, et al.. (2022). Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin. Semiconductor Science and Technology. 37(6). 65019–65019. 3 indexed citations

Beyer, Jan, Franziska C. Beyer, K. Irmscher, et al.. (2021). A carbon-doping related luminescence band in GaN revealed by below bandgap excitation. Journal of Applied Physics. 130(5). 11 indexed citations

Feneberg, Martin, M. F. Romero, R. Goldhahn, et al.. (2021). Origin of defect luminescence in ultraviolet emitting AlGaN diode structures. Applied Physics Letters. 118(20). 7 indexed citations

Kang, Ji Hye, H. Wenzel, Veit Hoffmann, et al.. (2020). Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$^th-order laterally coupled surface gratings. Optics Letters. 45(4). 935–935. 14 indexed citations

Brunner, Frank, et al.. (2020). High-temperature annealing of AlN films grown on 4H–SiC. AIP Advances. 10(12). 9 indexed citations

10.

Susilo, Norman, Sylvia Hagedorn, Carsten Netzel, et al.. (2020). Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire. Photonics Research. 8(4). 589–589. 62 indexed citations

11.

Brendel, Moritz, et al.. (2019). Degradation of AlGaN-based metal-semiconductor-metal photodetectors. Japanese Journal of Applied Physics. 58(SC). SCCC21–SCCC21. 12 indexed citations

12.

Martin, Dominik, A. Maaßdorf, Thomas Adam, et al.. (2019). High power broad-area lasers with buried implantation for current confinement. Semiconductor Science and Technology. 34(10). 105005–105005. 7 indexed citations

13.

Glaab, Johannes, Jan Ruschel, Tim Kolbe, et al.. (2019). Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen. IEEE Photonics Technology Letters. 31(7). 529–532. 44 indexed citations

14.

Enslin, Johannes, A. Knauer, Anna Mogilatenko, et al.. (2019). Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers. physica status solidi (a). 216(24). 12 indexed citations

15.

Ruschel, Jan, Johannes Glaab, Neysha Lobo‐Ploch, et al.. (2019). Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes. Photonics Research. 7(7). B36–B36. 53 indexed citations

16.

Cho, Hyun Kyong, Neysha Lobo‐Ploch, Jens Raß, et al.. (2018). Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning. IEEE Photonics Technology Letters. 30(20). 1792–1794. 4 indexed citations

17.

Susilo, Norman, Sylvia Hagedorn, Dominik Jaeger, et al.. (2018). AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire. Applied Physics Letters. 112(4). 177 indexed citations

18.

Susilo, Norman, Johannes Enslin, Luca Sulmoni, et al.. (2017). Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs. physica status solidi (a). 215(10). 25 indexed citations

19.

Brendel, Moritz, et al.. (2015). Top‐ and bottom‐illumination of solar‐blind AlGaN metal–semiconductor–metal photodetectors. physica status solidi (a). 212(5). 1021–1028. 12 indexed citations

20.

Wernicke, Tim, Carsten Netzel, M. Weyers, & Michael Kneissl. (2008). Semipolar GaN grown on m‐plane sapphire using MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1815–1817. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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