Patrick Vogt

6.3k total citations · 1 hit paper
87 papers, 5.2k citations indexed

About

Patrick Vogt is a scholar working on Atomic and Molecular Physics, and Optics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Patrick Vogt has authored 87 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 38 papers in Materials Chemistry and 29 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Patrick Vogt's work include Ga2O3 and related materials (27 papers), GaN-based semiconductor devices and materials (20 papers) and ZnO doping and properties (18 papers). Patrick Vogt is often cited by papers focused on Ga2O3 and related materials (27 papers), GaN-based semiconductor devices and materials (20 papers) and ZnO doping and properties (18 papers). Patrick Vogt collaborates with scholars based in Germany, United States and France. Patrick Vogt's co-authors include G. Le Lay, Andrea Resta, Paola De Padova, M. C. Asensio, J. Ávila, B. Ealet, E. Frantzeskakis, Thomas Bruhn, W. Richter and Michael Kneissl and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and The Journal of Chemical Physics.

In The Last Decade

Patrick Vogt

85 papers receiving 5.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon

2012 3.2k citations Patrick Vogt, Paola De Padova et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Patrick Vogt Germany	26	4.2k	2.4k	1.2k	771	580	87	5.2k
Antonis N. Andriotis Greece	34	3.2k 0.8×	1.5k 0.6×	1.1k 0.9×	737 1.0×	361 0.6×	146	4.2k
Serdar Öğüt United States	32	2.6k 0.6×	1.4k 0.6×	1.2k 1.0×	726 0.9×	180 0.3×	78	3.4k
Matthias Muntwiler Switzerland	26	2.2k 0.5×	1.2k 0.5×	1.2k 1.0×	460 0.6×	272 0.5×	95	3.4k
S. Francoeur Canada	22	1.7k 0.4×	1.9k 0.8×	2.0k 1.6×	306 0.4×	809 1.4×	66	3.7k
Koichi Kusakabe Japan	24	4.2k 1.0×	2.3k 1.0×	1.5k 1.3×	680 0.9×	612 1.1×	131	5.1k
Audrius Alkauskas Lithuania	37	3.6k 0.9×	1.4k 0.6×	2.6k 2.1×	1.0k 1.3×	741 1.3×	84	5.1k
Mikhail Fonin Germany	28	2.3k 0.5×	1.5k 0.6×	788 0.7×	821 1.1×	213 0.4×	102	2.9k
M. Alouani France	38	2.5k 0.6×	2.2k 0.9×	1.3k 1.1×	1.6k 2.1×	1.4k 2.4×	150	4.8k
Tadahiro Komeda Japan	33	2.1k 0.5×	1.9k 0.8×	1.9k 1.5×	974 1.3×	212 0.4×	148	4.0k
J. J. Palacios Spain	41	4.1k 1.0×	3.9k 1.6×	3.0k 2.5×	556 0.7×	927 1.6×	160	6.5k

Countries citing papers authored by Patrick Vogt

Since Specialization

Citations

This map shows the geographic impact of Patrick Vogt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Vogt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Vogt more than expected).

Fields of papers citing papers by Patrick Vogt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Vogt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Vogt. The network helps show where Patrick Vogt may publish in the future.

Co-authorship network of co-authors of Patrick Vogt

This figure shows the co-authorship network connecting the top 25 collaborators of Patrick Vogt. A scholar is included among the top collaborators of Patrick Vogt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Patrick Vogt. Patrick Vogt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hensling, Felix V. E., Y. Eren Suyolcu, Indra Subedi, et al.. (2025). Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes. APL Materials. 13(11).

Schowalter, Marco, Jonathan P. McCandless, Debdeep Jena, et al.. (2024). Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy. APL Materials. 12(1). 12 indexed citations

Vogt, Patrick, Shun‐Li Shang, & Zi‐Kui Liu. (2024). Suboxides and subselenides: intermediate reaction products to form Ga₂O₃, Ga₂Se₃, In₂O₃, In₂Se₃, SnO₂, and SnSe₂ during molecular-beam epitaxy. Physical Chemistry Chemical Physics. 27(3). 1534–1542. 2 indexed citations

Schowalter, Marco, Florian F. Krause, Tim Grieb, et al.. (2024). Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface. APL Materials. 12(9). 3 indexed citations

McCandless, Jonathan P., et al.. (2023). Growth of α-Ga₂O₃ on α-Al₂O₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy. Japanese Journal of Applied Physics. 62(SF). SF1013–SF1013. 11 indexed citations

Figge, S., et al.. (2023). Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy. APL Materials. 11(9). 4 indexed citations

McCandless, Jonathan P., Vladimir Protasenko, Adam T. Neal, et al.. (2022). Controlled Si doping of β -Ga2O3 by molecular beam epitaxy. Applied Physics Letters. 121(7). 32 indexed citations

Vogt, Patrick, Jörg Schörmann, Marcus Rohnke, et al.. (2022). Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer. Journal of Applied Physics. 132(19). 5 indexed citations

Vogt, Patrick, Felix V. E. Hensling, Jonathan P. McCandless, et al.. (2022). Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy. Physical Review Applied. 17(3). 19 indexed citations

10.

Vogt, Patrick, Felix V. E. Hensling, Celesta S. Chang, et al.. (2021). Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy. APL Materials. 9(3). 61 indexed citations

11.

McCandless, Jonathan P., Celesta S. Chang, Kazuki Nomoto, et al.. (2021). Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire. Applied Physics Letters. 119(6). 54 indexed citations

12.

Minj, Albert, Daniela Cavalcoli, A. Cros, et al.. (2016). Surface properties of AlInGaN/GaN heterostructure. Materials Science in Semiconductor Processing. 55. 26–31. 8 indexed citations

13.

Bruhn, Thomas, Bjørn‐Ove Fimland, & Patrick Vogt. (2015). Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces. The Journal of Chemical Physics. 142(10). 101903–101903. 2 indexed citations

14.

Ávila, J., Paola De Padova, Suyeon Cho, et al.. (2013). Presence of gapped silicene-derived band in the prototypical (3 × 3) silicene phase on silver (111) surfaces. Journal of Physics Condensed Matter. 25(26). 262001–262001. 60 indexed citations

15.

Cavalcoli, Daniela, et al.. (2013). SURFACE PREPARATION AND CHARACTERIZATION OF SEMIPOLAR (20-21) INGAN LAYERS. 1 indexed citations

16.

Kolbe, Tim, A. Knauer, H. Wenzel, et al.. (2009). Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 8 indexed citations

17.

Bruhn, Thomas, Bjørn‐Ove Fimland, F. Bloom, et al.. (2007). Optical anisotropy of cyclopentene terminated GaAs(001) surfaces. Applied Physics A. 87(3). 469–473. 9 indexed citations

18.

Müller, Jürgen F. K. & Patrick Vogt. (1998). Cu(I)-catalyzed sulfoximination. Tetrahedron Letters. 39(27). 4805–4806. 39 indexed citations

19.

Vogt, Patrick, Michael Schmitt, & W. Kiefer. (1995). Continuum resonance Raman scattering in 127I79Br and 35Cl2. Experimental verification of the reflection principle. Chemical Physics Letters. 243(1-2). 64–70. 6 indexed citations

20.

Kiefer, W., et al.. (1992). A symmetry principle for corresponding Stokes and anti-Stokes continuum resonance Raman scattering. Chemical Physics. 164(1). 99–106. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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