Ralf Doerner

1.6k citations
108 papers · 1.2k indexed · h-index 20

Ralf Doerner

103 papers receiving 1.1k citations

Peers

Ralf Doerner
Comparison fields: 5 of 26
  • Condensed Matter Physics 245
  • Electrical and Electronic Engineering 1.2k
  • Atomic and Molecular Physics, and Optics 245
  • Biomedical Engineering 131
  • Astronomy and Astrophysics 35
Replace Charles F. Campbell with:
Charles F. Campbell United States
Yasuhiro Nakasha Japan
M. Camiade France
A. Platzker United States
Kazuaki Kunihiro Japan
K.W. Kobayashi United States
Y. Ayasli United States
Hong‐Yeh Chang Taiwan
Jean‐Christophe Nallatamby France
W. Struble United States
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Citations per year

Countries citing papers authored by Ralf Doerner

Since Specialization
Citations

This map shows the geographic impact of Ralf Doerner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ralf Doerner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ralf Doerner more than expected).

Fields of papers citing papers by Ralf Doerner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ralf Doerner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ralf Doerner. The network helps show where Ralf Doerner may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Ralf Doerner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ralf Doerner Line = papers co-authored together Ralf Doerner links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 20251
2 20240
3 20211
4 202112
5
An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs
20203
6 20192
7 20172
8
Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices
201411
9 20141
10 201453
11
Towards a large-signal noise model for GaN HEMT devices
20133
12 201333
13 20132
14
On parasitic coupling in CPW structures
20123
15
Noise modeling of GaN HEMT devices
201214
16 201130
17
Load-pull investigation of GaN-HEMT for supply modulated applications
20112
18 2007128
19 200224
20 20027

About Ralf Doerner

Ralf Doerner is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Statistics, Probability and Uncertainty and Biomedical Engineering, having authored 108 papers that have together received 1.2k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (78 papers), Microwave and Dielectric Measurement Techniques (43 papers), Microwave Engineering and Waveguides (36 papers), Electromagnetic Compatibility and Noise Suppression (27 papers), Semiconductor Quantum Structures and Devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), GaN-based semiconductor devices and materials (13 papers) and Advanced Power Amplifier Design (10 papers). The work is most often cited by research in Condensed Matter Physics (245 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (245 citations), Biomedical Engineering (131 citations) and Astronomy and Astrophysics (35 citations). Ralf Doerner has collaborated with scholars based in Germany, Denmark and France. Frequent co-authors include Matthias Rudolph, W. Heinrich, P. Heymann, Andrej Rumiantsev, Gia Ngoc Phung, Uwe Arz, Viktor Krozer, Maruf Hossain, Nils Weimann and F.J. Schmückle. Their work appears in journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Microwave and Wireless Components Letters, IEEE Transactions on Electron Devices, Electronics Letters and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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