Hassan Gargouri

919 total citations
35 papers, 787 citations indexed

About

Hassan Gargouri is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hassan Gargouri has authored 35 papers receiving a total of 787 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hassan Gargouri's work include Semiconductor materials and devices (23 papers), Electronic and Structural Properties of Oxides (10 papers) and ZnO doping and properties (7 papers). Hassan Gargouri is often cited by papers focused on Semiconductor materials and devices (23 papers), Electronic and Structural Properties of Oxides (10 papers) and ZnO doping and properties (7 papers). Hassan Gargouri collaborates with scholars based in Germany, Italy and Poland. Hassan Gargouri's co-authors include Karsten Henkel, Dieter Schmeißer, Michael Arens, Bernd Gruska, Massimo Tallarida, Joachim Würfl, Thomas Riedl, Oliver Hilt, Eldad Bahat‐Treidel and Kornelius Tetzner and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Sensors.

In The Last Decade

Hassan Gargouri

34 papers receiving 772 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hassan Gargouri Germany 17 537 497 260 103 86 35 787
Janghyun Jo South Korea 16 361 0.7× 440 0.9× 140 0.5× 132 1.3× 64 0.7× 34 720
Kin-Tak Lam Taiwan 14 523 1.0× 528 1.1× 183 0.7× 122 1.2× 34 0.4× 40 767
Hock Jin Quah Malaysia 21 742 1.4× 712 1.4× 287 1.1× 187 1.8× 51 0.6× 88 1.1k
Young Kuk Lee South Korea 18 619 1.2× 701 1.4× 137 0.5× 65 0.6× 176 2.0× 52 1.0k
Michael Duerrschnabel Germany 13 267 0.5× 345 0.7× 276 1.1× 48 0.5× 55 0.6× 24 663
Sin-Liang Ou Taiwan 14 239 0.4× 421 0.8× 299 1.1× 155 1.5× 141 1.6× 22 576
Yao Yin China 16 440 0.8× 485 1.0× 117 0.5× 69 0.7× 75 0.9× 47 789
X. D. Gao China 17 654 1.2× 855 1.7× 416 1.6× 52 0.5× 45 0.5× 31 974
José Manuel Caicedo Spain 16 384 0.7× 511 1.0× 345 1.3× 53 0.5× 56 0.7× 50 843
Takashi Matsumae Japan 16 479 0.9× 288 0.6× 158 0.6× 77 0.7× 43 0.5× 76 727

Countries citing papers authored by Hassan Gargouri

Since Specialization
Citations

This map shows the geographic impact of Hassan Gargouri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hassan Gargouri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hassan Gargouri more than expected).

Fields of papers citing papers by Hassan Gargouri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hassan Gargouri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hassan Gargouri. The network helps show where Hassan Gargouri may publish in the future.

Co-authorship network of co-authors of Hassan Gargouri

This figure shows the co-authorship network connecting the top 25 collaborators of Hassan Gargouri. A scholar is included among the top collaborators of Hassan Gargouri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hassan Gargouri. Hassan Gargouri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bahat‐Treidel, Eldad, Oliver Hilt, Veit Hoffmann, et al.. (2021). On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs. IEEE Journal of the Electron Devices Society. 9. 215–228. 14 indexed citations
3.
Janowitz, C., Paul Plate, Hassan Gargouri, et al.. (2020). Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(2). 64 indexed citations
4.
Gargouri, Hassan, et al.. (2020). In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(1). 9 indexed citations
5.
Kot, Małgorzata, Karsten Henkel, Hassan Gargouri, et al.. (2019). Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(2). 10 indexed citations
6.
Hagedorn, Sylvia, et al.. (2019). AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(2). 3 indexed citations
7.
Tetzner, Kornelius, Eldad Bahat‐Treidel, Oliver Hilt, et al.. (2019). Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit. IEEE Electron Device Letters. 40(9). 1503–1506. 120 indexed citations
8.
Schilirò, Emanuela, Filippo Giannazzo, Corrado Bongiorno, et al.. (2019). Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. Materials Science in Semiconductor Processing. 97. 35–39. 12 indexed citations
9.
Kot, Małgorzata, et al.. (2017). Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 36(1). 11 indexed citations
10.
Weigel, C., et al.. (2017). A monolithic micro-optical interferometer deep etched into fused silica. Microelectronic Engineering. 174. 40–45. 14 indexed citations
11.
Henkel, Karsten, et al.. (2016). In-gap states in titanium dioxide and oxynitride atomic layer deposited films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(1). 14 indexed citations
12.
Sowińska, M., et al.. (2015). Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(1). 22 indexed citations
13.
Gargouri, Hassan, et al.. (2015). Ag films grown by remote plasma enhanced atomic layer deposition on different substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(1). 17 indexed citations
14.
Schröder, Sven, Hassan Gargouri, Michael Arens, et al.. (2015). Three dimensional ALD of TiO<inf>2</inf> for in-vivo biomedical sensor applications. 21–24. 6 indexed citations
15.
Gargouri, Hassan, et al.. (2014). Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor. Nanoscale Research Letters. 9(1). 223–223. 21 indexed citations
16.
Das, Chittaranjan, Karsten Henkel, Massimo Tallarida, et al.. (2014). Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 33(1). 30 indexed citations
17.
Henkel, Karsten, Hassan Gargouri, Bernd Gruska, et al.. (2013). Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 32(1). 25 indexed citations
18.
Haeberle, Jörg, Karsten Henkel, Hassan Gargouri, et al.. (2013). Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films. Beilstein Journal of Nanotechnology. 4. 732–742. 95 indexed citations
19.
Lossy, R., Hassan Gargouri, Michael Arens, & Joachim Würfl. (2012). Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 16 indexed citations
20.
Gargouri, Hassan, Peter Erk, Christian Lennartz, et al.. (2008). Color tuning by changing the substituent of highly luminescent iridium (III) complexes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7051. 705108–705108. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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