Martin Martens

577 total citations
20 papers, 470 citations indexed

About

Martin Martens is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Martin Martens has authored 20 papers receiving a total of 470 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 12 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Martin Martens's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (8 papers). Martin Martens is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor Quantum Structures and Devices (11 papers) and Ga2O3 and related materials (8 papers). Martin Martens collaborates with scholars based in Germany, Bulgaria and United States. Martin Martens's co-authors include Michael Kneissl, M. Weyers, Tim Wernicke, Christian Kühn, A. Knauer, Frank Brunner, V. Kueller, R. Lossy, Patrick Vogt and Joachim Würfl and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Martin Martens

18 papers receiving 457 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Martin Martens Germany 11 411 250 175 155 140 20 470
Hongen Xie United States 15 473 1.2× 253 1.0× 262 1.5× 214 1.4× 163 1.2× 29 584
B. Schineller Germany 14 497 1.2× 233 0.9× 252 1.4× 279 1.8× 83 0.6× 72 640
Md. Mahbub Satter United States 12 444 1.1× 240 1.0× 202 1.2× 160 1.0× 172 1.2× 22 522
J. Limb United States 15 515 1.3× 249 1.0× 134 0.8× 175 1.1× 64 0.5× 23 561
Torsten Langer Germany 10 335 0.8× 146 0.6× 187 1.1× 198 1.3× 64 0.5× 18 398
O. H. Nam South Korea 10 337 0.8× 111 0.4× 170 1.0× 142 0.9× 75 0.5× 15 425
J. Woodward United States 12 166 0.4× 132 0.5× 157 0.9× 129 0.8× 54 0.4× 35 376
A. M. Mizerov Russia 12 392 1.0× 240 1.0× 187 1.1× 95 0.6× 117 0.8× 68 444
S. Valdueza‐Felip Spain 15 335 0.8× 129 0.5× 132 0.8× 158 1.0× 198 1.4× 39 456

Countries citing papers authored by Martin Martens

Since Specialization
Citations

This map shows the geographic impact of Martin Martens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Martens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Martens more than expected).

Fields of papers citing papers by Martin Martens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Martens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Martens. The network helps show where Martin Martens may publish in the future.

Co-authorship network of co-authors of Martin Martens

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Martens. A scholar is included among the top collaborators of Martin Martens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Martens. Martin Martens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Singer, Stefan, Carsten Eschenbaum, Martin Martens, et al.. (2025). Linear-drive amplifier-less 112 Gbit/s PAM4 operation of a silicon-organic hybrid (SOH) Mach-Zehnder modulator at 265 mVpp. Optics Express. 33(19). 40055–40055.
2.
Sarwar, S., Carsten Eschenbaum, Axel Mertens, et al.. (2024). O-Band SOH Mach-Zehnder Modulator Operating at a PAM4 Line Rate of 384 Gbit/s with Sub-Volt Drive Voltage. Th4B.6–Th4B.6. 3 indexed citations
3.
Singer, S. Fred, Carsten Eschenbaum, Martin Martens, et al.. (2024). Linear-Drive Amplifier-Less 112 Gbit/s PAM4 Operation of a Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulator at 265 mVpp. M3K.6–M3K.6.
4.
Witzigmann, Bernd, Friedhard Römer, Martin Martens, et al.. (2020). Calculation of optical gain in AlGaN quantum wells for ultraviolet emission. AIP Advances. 10(9). 11 indexed citations
5.
Enslin, Johannes, A. Knauer, Anna Mogilatenko, et al.. (2019). Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers. physica status solidi (a). 216(24). 12 indexed citations
6.
Enslin, Johannes, A. Knauer, Anna Mogilatenko, et al.. (2019). Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers. physica status solidi (a). 216(24). 1 indexed citations
7.
Kühn, Christian, Martin Martens, Frank Mehnke, et al.. (2018). Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics. Journal of Physics D Applied Physics. 51(41). 415101–415101. 16 indexed citations
8.
Kühn, Christian, Martin Martens, T. Markurt, et al.. (2018). MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers. physica status solidi (a). 215(13). 6 indexed citations
9.
Martens, Martin, Christian Kühn, Sylvia Hagedorn, et al.. (2017). The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers. Applied Physics Letters. 110(8). 31 indexed citations
10.
Kang, Ji Hye, Martin Martens, H. Wenzel, et al.. (2016). Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings. IEEE Photonics Technology Letters. 29(1). 138–141. 13 indexed citations
11.
Martens, Martin, Christian Kühn, V. Kueller, et al.. (2016). Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes. Applied Physics Letters. 108(15). 46 indexed citations
12.
Martens, Martin, A. Knauer, V. Kueller, et al.. (2015). UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates. IEEE Photonics Technology Letters. 27(18). 1969–1972. 15 indexed citations
13.
Leute, Robert A. R., Junjun Wang, Tobias Meisch, et al.. (2015). Embedded GaN nanostripes on c‐sapphire for DFB lasers with semipolar quantum wells. physica status solidi (b). 253(1). 180–185. 5 indexed citations
14.
Zeimer, U., Anna Mogilatenko, A. Knauer, et al.. (2015). Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN/sapphire templates. Semiconductor Science and Technology. 30(11). 114008–114008. 15 indexed citations
15.
Li, Xiaohang, Theeradetch Detchprohm, Tsung‐Ting Kao, et al.. (2014). Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates. Applied Physics Letters. 105(14). 73 indexed citations
16.
Martens, Martin, Frank Mehnke, Christian Kühn, et al.. (2014). Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates. IEEE Photonics Technology Letters. 26(4). 342–345. 92 indexed citations
17.
Brendel, Moritz, Martin Martens, Andrea Knigge, et al.. (2013). Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal–Semiconductor–Metal Photodetectors. Japanese Journal of Applied Physics. 52(8S). 08JF01–08JF01. 10 indexed citations
18.
Wenzel, H., et al.. (2013). Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes. Journal of Applied Physics. 114(11). 7 indexed citations
19.
Martens, Martin, Joachim Piprek, H. Wenzel, et al.. (2012). Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 826219–826219. 9 indexed citations
20.
Martens, Martin, Patrick Vogt, Frank Brunner, et al.. (2011). High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching. Applied Physics Letters. 98(21). 105 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Hongen Xie Breakdown of academic impact, for papers by B. Schineller Breakdown of academic impact, for papers by Md. Mahbub Satter Breakdown of academic impact, for papers by J. Limb Breakdown of academic impact, for papers by Torsten Langer Breakdown of academic impact, for papers by O. H. Nam Breakdown of academic impact, for papers by J. Woodward Breakdown of academic impact, for papers by A. M. Mizerov Breakdown of academic impact, for papers by S. Valdueza‐Felip
Rankless by CCL
2026