Chen-Feng Hsu

483 total citations
15 papers, 262 citations indexed

About

Chen-Feng Hsu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Chen-Feng Hsu has authored 15 papers receiving a total of 262 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Chen-Feng Hsu's work include Advanced Memory and Neural Computing (8 papers), Phase-change materials and chalcogenides (6 papers) and Semiconductor materials and devices (6 papers). Chen-Feng Hsu is often cited by papers focused on Advanced Memory and Neural Computing (8 papers), Phase-change materials and chalcogenides (6 papers) and Semiconductor materials and devices (6 papers). Chen-Feng Hsu collaborates with scholars based in Taiwan, United States and China. Chen-Feng Hsu's co-authors include Xinyu Bao, H.‐S. Philip Wong, Chao-Ching Cheng, Wen‐Hao Chang, Yun-Yan Chung, Iuliana Radu, Sheng‐Kai Su, Gregory Pitner, Fang‐Yu Fu and Zichen Zhang and has published in prestigious journals such as Nature Communications, ACS Applied Materials & Interfaces and IEEE Transactions on Electron Devices.

In The Last Decade

Chen-Feng Hsu

15 papers receiving 257 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Chen-Feng Hsu Taiwan	8	188	181	43	34	16	15	262
Chengji Jin China	12	516 2.7×	236 1.3×	38 0.9×	30 0.9×	11 0.7×	52	541
Arnab Pal United States	9	248 1.3×	247 1.4×	69 1.6×	35 1.0×	14 0.9×	19	381
Xiaolin Wang Singapore	12	329 1.8×	84 0.5×	29 0.7×	26 0.8×	6 0.4×	49	359
Nouredine Rassoul Belgium	11	310 1.6×	79 0.4×	33 0.8×	33 1.0×	19 1.2×	38	328
Qiwen Kong Singapore	12	396 2.1×	122 0.7×	39 0.9×	21 0.6×	12 0.8×	61	424
Huiming Bu United States	8	396 2.1×	167 0.9×	102 2.4×	59 1.7×	20 1.3×	21	475
Vladimir Pejović Belgium	7	282 1.5×	215 1.2×	71 1.7×	37 1.1×	28 1.8×	16	331
Enrico Caruso Italy	10	372 2.0×	194 1.1×	64 1.5×	45 1.3×	15 0.9×	29	425
Thomas V. Mc Knight United States	4	125 0.7×	112 0.6×	46 1.1×	16 0.5×	9 0.6×	7	188

Countries citing papers authored by Chen-Feng Hsu

Since Specialization

Citations

This map shows the geographic impact of Chen-Feng Hsu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chen-Feng Hsu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chen-Feng Hsu more than expected).

Fields of papers citing papers by Chen-Feng Hsu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chen-Feng Hsu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chen-Feng Hsu. The network helps show where Chen-Feng Hsu may publish in the future.

Co-authorship network of co-authors of Chen-Feng Hsu

This figure shows the co-authorship network connecting the top 25 collaborators of Chen-Feng Hsu. A scholar is included among the top collaborators of Chen-Feng Hsu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chen-Feng Hsu. Chen-Feng Hsu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

15 of 15 papers shown

Sathaiya, D. Mahaveer, Edward Chen, Chen-Feng Hsu, et al.. (2024). On the Extreme Scaling of Transistors with Monolayer MOS2 Channel. 1–2. 6 indexed citations

Hsu, Chen-Feng, et al.. (2024). Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line. IEEE Electron Device Letters. 45(10). 1800–1803. 4 indexed citations

Ambrosi, Elia, et al.. (2024). Chalcogenide Selectors for Low Voltage and High Density Memory Applications. 1–2. 1 indexed citations

Wu, Xiangjin, Asir Intisar Khan, Chen-Feng Hsu, et al.. (2024). Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory. Nature Communications. 15(1). 13–13. 40 indexed citations

Ambrosi, Elia, Kamalesh Jana, Cheng‐Hsien Wu, et al.. (2024). First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory. 1–4. 1 indexed citations

Sathaiya, D. Mahaveer, Goutham Arutchelvan, Chen-Feng Hsu, et al.. (2023). Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS ₂ Channel Transistors. IEEE Transactions on Electron Devices. 70(12). 6680–6686. 6 indexed citations

Zhang, Zichen, M. Passlack, Gregory Pitner, et al.. (2023). Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping. Nature Electronics. 6(12). 999–1008. 27 indexed citations

Datye, Isha, Sam Vaziri, Elia Ambrosi, et al.. (2023). Forming-Free Selectors Based on Te in an Insulating SiO_x Matrix. IEEE Transactions on Electron Devices. 71(1). 530–535. 1 indexed citations

Ambrosi, Elia, Cheng‐Hsien Wu, Chen-Feng Hsu, et al.. (2022). Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors. 2022 International Electron Devices Meeting (IEDM). 18.7.1–18.7.4. 5 indexed citations

10.

Ambrosi, Elia, et al.. (2022). Reliable Low Voltage Selector Device Technology Based on Robust SiNGeCTe Arsenic-Free Chalcogenide. IEEE Electron Device Letters. 43(10). 1673–1676. 12 indexed citations

11.

Yang, Shao‐Yu, et al.. (2022). High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 377–378. 29 indexed citations

12.

Chung, Yun-Yan, Chen-Feng Hsu, Ming‐Yang Li, et al.. (2022). First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length. 2022 International Electron Devices Meeting (IEDM). 34.5.1–34.5.4. 49 indexed citations

13.

Zhang, Zichen, M. Passlack, Gregory Pitner, et al.. (2022). Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth. ACS Applied Materials & Interfaces. 14(9). 11873–11882. 14 indexed citations

14.

Ambrosi, Elia, Cheng‐Hsien Wu, Chen-Feng Hsu, et al.. (2021). Low variability high endurance and low voltage arsenic-free selectors based on GeCTe. 2021 IEEE International Electron Devices Meeting (IEDM). 28.5.1–28.5.4. 16 indexed citations

15.

Chou, Ang‐Sheng, Chao-Ching Cheng, Po‐Hsun Ho, et al.. (2020). High On-State Current in Chemical Vapor Deposited Monolayer MoS₂ nFETs With Sn Ohmic Contacts. IEEE Electron Device Letters. 42(2). 272–275. 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact