Q. Ouyang

835 citations

31 papers · 455 indexed · h-index 12

Impact in

Transportation top 5%
- Transportation Planning and Optimization
- Human Mobility and Location-Based Analysis
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Transportation 4
- Transportation Planning and Optimization 4
Electrical and Electronic Engineering 25
- Advancements in Semiconductor Devices and Circuit Design 21
- Semiconductor materials and devices 19
- Integrated Circuits and Semiconductor Failure Analysis 10
- Photonic and Optical Devices 5
- Ferroelectric and Negative Capacitance Devices 4
- Silicon Carbide Semiconductor Technologies 3

Co-authors: Steven J. Koester J. O. Chu A. Grill J.D. Schaub G. Dehlinger Alexander Y. Sun Zhi Zhong Qian Yang
Journals: IEEE Transactions on Electron Devices (4 papers)IEEE Electron Device Letters (2 papers)Applied Sciences (2 papers)Journal of Advanced Transportation (1 paper)Energies (1 paper)
Partner nations: United States China Austria

In The Last Decade

Q. Ouyang

29 papers receiving 437 citations

Peers

Countries citing papers authored by Q. Ouyang

Since Specialization

Citations

This map shows the geographic impact of Q. Ouyang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Q. Ouyang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Q. Ouyang more than expected).

Fields of papers citing papers by Q. Ouyang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Q. Ouyang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Q. Ouyang. The network helps show where Q. Ouyang may publish in the future.

Co-authors

The 25 scholars most cited alongside Q. Ouyang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Q. Ouyang Line = papers co-authored together Q. Ouyang links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Long Short-Term Memory and Graph Convolution Network for Forecasting the Crude Oil Traffic Flow IEEE Access ·Q. Ouyang, Jennifer Custer, Yuanyuan Xue, Zhehui Liu	2022	5
2	A Bus Passenger Flow Prediction Model Fused with Point-of-Interest Data Based on Extreme Gradient Boosting Applied Sciences ·D. Zawadzka, Virgil Virgil, Q. Ouyang, Yuan Ren	2022	22
3	Optimizing the bus operation plan Based on Deep Learning Microprocessors and Microsystems ·Virgil Virgil, D. Zawadzka, Yuan Ren, Q. Ouyang	2021	1
4	An LSTM-Based Method Considering History and Real-Time Data for Passenger Flow Prediction Applied Sciences ·Q. Ouyang, Virgil Virgil, Jihui Ma, Xiaoting Chen	2020	23
5	FDSOI CMOS with dielectrically-isolated back gates and 30nm L<inf>G</inf> high-γ/metal gate Marwan Khater, J. Cai, R.H. Dennard, Jeng-Bang Yau, Chao Wang, L. Shi, Michael Guillorn, J. A. Ott, Q. Ouyang, Wilfried Haensch	2010	3
6	Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias IEEE Electron Device Letters ·Steven J. Koester, K. L. Saenger, J. O. Chu, Q. Ouyang, J. A. Ott, K.A. Jenkins, D. Canaperi, Deepti S.S, C. Jahnes, S.E. Steen	2005	9
7	Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping IEEE Electron Device Letters ·Steven J. Koester, K. L. Saenger, J. O. Chu, Q. Ouyang, J. A. Ott, D. Canaperi, Deepti S.S, C. Jahnes	2005	1
8	High-speed germanium-on-insulator photodetectors G. Dehlinger, J.D. Schaub, Steven J. Koester, Q. Ouyang, J. O. Chu, A. Grill	2005	7
9	High-speed lateral PIN photodiodes in silicon technologies Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.D. Schaub, Steven J. Koester, G. Dehlinger, Q. Ouyang, Drew Guckenberger, Min Yang, D.L. Rogers, Jack O. Chu, A. Grill	2004	7
10	Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping Steven J. Koester, K. L. Saenger, J. O. Chu, Q. Ouyang, J. A. Ott, D. Canaperi, J. L. Wang, C. Jahnes, S.E. Steen	2004	2
11	A simulation study on thin SOI bipolar transistors with fully or partially depleted collector Q. Ouyang, Jin Cai, T.H. Ning, P. Oldiges, J. Johnson	2003	16
12	Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels Q. Ouyang, Claudia K. Hoffman, I.V. Tikhonovskaya, F.E. Prins, S. Banerjee	2003	0
13	80 nm gate-length Si/Si _0.7 Ge _0.3 n -MODFET with 194 GHz f _max Electronics Letters ·Steven J. Koester, K. L. Saenger, J. O. Chu, Q. Ouyang, J. A. Ott, M. J. Rooks, D. Canaperi, Deepti S.S, C. Jahnes, S.E. Steen	2003	11
14	Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETs D.L. Kencke, Aurilene de Macêdo Alves Bona, Yuanyuan Yu, S. Mudanai, Q. Ouyang, A.F. Tasch, Siddhartha Banerjee	2003	10
15	Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping IEEE Transactions on Electron Devices ·Xiang-Dong Chen, Q. Ouyang, Geng Wang, Sanjay K. Banerjee	2002	27
16	The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory D.L. Kencke, Rosa Marie Vida, Yuanyuan Yu, Q. Ouyang, S. Jallepalli, M. Rashed, C.M. Maziar, A.F. Tasch, S. Banerjee	2002	6
17	Modeling of direct tunneling current through gate dielectric stacks S. Mudanai, AliKHushi Allami, Q. Ouyang, A.F. Tasch, Ulisy Syarifati, Dim‐Lee Kwong, Siddhartha Banerjee	2002	1
18	Hole and electron mobility enhancement in strained SiGe vertical MOSFETs IEEE Transactions on Electron Devices ·Xiang-Dong Chen, Kou‐Chen Liu, Q. Ouyang, I.V. Tikhonovskaya, S. Banerjee	2001	16
19	Built-in longitudinal field effects in sub-100-nm graded Si/sub 1-x/Ge/sub x/ channel PMOSFETs IEEE Transactions on Electron Devices ·Q. Ouyang, Xiang-Dong Chen, A.F. Tasch, Leonard F. Register, S. Banerjee	2001	3
20	Models for electron and hole mobilities in MOS accumulation layers IEEE Transactions on Electron Devices ·S. Mudanai, G. Chindalore, W.-K. Shih, Juliana Possebon Scalari, Q. Ouyang, A.F. Tasch, C.M. Maziar, Sanjay K. Banerjee	1999	23

About Q. Ouyang

Q. Ouyang is a scholar working on Transportation, Electrical and Electronic Engineering, Building and Construction, Environmental Engineering and Ocean Engineering, having authored 31 papers that have together received 455 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (19 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Photonic and Optical Devices (5 papers), Transportation Planning and Optimization (4 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Traffic Prediction and Management Techniques (3 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Transportation (65 citations), Electrical and Electronic Engineering (310 citations), Building and Construction (50 citations), Atomic and Molecular Physics, and Optics (87 citations) and Environmental Engineering (35 citations). Q. Ouyang has collaborated with scholars based in United States, China and Austria. Frequent co-authors include Steven J. Koester, J. O. Chu, A. Grill, J.D. Schaub, G. Dehlinger, Alexander Y. Sun, Zhi Zhong, Qian Yang, Sanjay K. Banerjee and Xiang-Dong Chen. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Sciences, Journal of Advanced Transportation and Energies.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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