Sheng‐Kai Su

631 total citations
25 papers, 437 citations indexed

About

Sheng‐Kai Su is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Sheng‐Kai Su has authored 25 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 8 papers in Biomedical Engineering. Recurrent topics in Sheng‐Kai Su's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Graphene research and applications (10 papers). Sheng‐Kai Su is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Graphene research and applications (10 papers). Sheng‐Kai Su collaborates with scholars based in Taiwan, United States and Ireland. Sheng‐Kai Su's co-authors include H.‐S. Philip Wong, Chao-Ching Cheng, Lain‐Jong Li, Chih‐Piao Chuu, Mingyang Li, Iuliana Radu, Gregory Pitner, Edward Chen, Chao-Hsin Chien and Andrew C. Kummel and has published in prestigious journals such as Nano Letters, ACS Nano and IEEE Transactions on Electron Devices.

In The Last Decade

Sheng‐Kai Su

25 papers receiving 429 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sheng‐Kai Su Taiwan 11 315 308 104 30 20 25 437
Arash Hazeghi United States 8 205 0.7× 290 0.9× 82 0.8× 41 1.4× 42 2.1× 11 370
Jianglin Du Ireland 12 285 0.9× 265 0.9× 149 1.4× 24 0.8× 15 0.8× 24 529
Nirmaan Shanker United States 10 360 1.1× 607 2.0× 54 0.5× 13 0.4× 42 2.1× 22 670
Chengji Jin China 12 236 0.7× 516 1.7× 38 0.4× 30 1.0× 15 0.8× 52 541
Chin‐Sheng Pang United States 12 314 1.0× 327 1.1× 92 0.9× 33 1.1× 27 1.4× 21 457
Kavindra Kandpal India 13 221 0.7× 279 0.9× 61 0.6× 78 2.6× 27 1.4× 73 397
Azimkhan Kozhakhmetov United States 12 339 1.1× 238 0.8× 42 0.4× 45 1.5× 37 1.9× 18 436
Karine Florent Belgium 11 295 0.9× 444 1.4× 23 0.2× 24 0.8× 16 0.8× 20 479
Yashwanth Balaji Belgium 11 455 1.4× 388 1.3× 90 0.9× 34 1.1× 28 1.4× 22 590
Chen-Feng Hsu Taiwan 8 181 0.6× 188 0.6× 43 0.4× 34 1.1× 16 0.8× 15 262

Countries citing papers authored by Sheng‐Kai Su

Since Specialization
Citations

This map shows the geographic impact of Sheng‐Kai Su's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sheng‐Kai Su with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sheng‐Kai Su more than expected).

Fields of papers citing papers by Sheng‐Kai Su

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sheng‐Kai Su. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sheng‐Kai Su. The network helps show where Sheng‐Kai Su may publish in the future.

Co-authorship network of co-authors of Sheng‐Kai Su

This figure shows the co-authorship network connecting the top 25 collaborators of Sheng‐Kai Su. A scholar is included among the top collaborators of Sheng‐Kai Su based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sheng‐Kai Su. Sheng‐Kai Su is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Safron, Nathaniel S., M. Passlack, Sheng‐Kai Su, et al.. (2025). Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors. Nano Letters. 25(10). 3981–3988. 3 indexed citations
2.
Chuu, Chih‐Piao, Sheng‐Kai Su, Shengman Li, et al.. (2023). Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array. Advanced Materials Interfaces. 11(6). 7 indexed citations
3.
Chung, Yun-Yan, Ming‐Yang Li, Sheng‐Kai Su, et al.. (2023). High-performance monolayer MoS2 nanosheet GAA transistor. Nanotechnology. 35(12). 125204–125204. 11 indexed citations
4.
Lin, Qing, Sheng‐Kai Su, Zichen Zhang, et al.. (2023). Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors. ACS Nano. 17(21). 21083–21092. 11 indexed citations
5.
Safron, Nathaniel S., Sheng‐Kai Su, Wen‐Hao Chang, et al.. (2023). Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors. Advanced Electronic Materials. 10(3). 3 indexed citations
6.
Safron, Nathaniel S., Sheng‐Kai Su, M. Passlack, et al.. (2023). Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping. 1–4. 3 indexed citations
7.
Ho, Po‐Hsun, Eric Yi‐Hsiu Huang, Yuying Yang, et al.. (2023). High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method. ACS Nano. 17(13). 12208–12215. 22 indexed citations
8.
Li, Shengman, Nathaniel S. Safron, Sheng‐Kai Su, et al.. (2023). High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer. 1–4. 10 indexed citations
9.
Sathaiya, D. Mahaveer, Goutham Arutchelvan, Chen-Feng Hsu, et al.. (2023). Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS 2 Channel Transistors. IEEE Transactions on Electron Devices. 70(12). 6680–6686. 6 indexed citations
10.
Zhang, Zichen, M. Passlack, Gregory Pitner, et al.. (2023). Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping. Nature Electronics. 6(12). 999–1008. 27 indexed citations
11.
Su, Sheng‐Kai, Shengman Li, Qing Lin, et al.. (2023). Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs. 1–4. 3 indexed citations
12.
Lin, Qing, Thomas F. Kelly, Sheng‐Kai Su, et al.. (2023). Switching limits of top-gated carbon nanotube field-effect transistors. Solid-State Electronics. 202. 108624–108624. 2 indexed citations
13.
Lin, Qing, Gregory Pitner, Sheng‐Kai Su, et al.. (2022). Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs. IEEE Electron Device Letters. 43(3). 490–493. 13 indexed citations
14.
Su, Sheng‐Kai, Edward Chen, Mengzhan Li, et al.. (2022). Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 403–404. 22 indexed citations
15.
Pitner, Gregory, Zichen Zhang, Qing Lin, et al.. (2020). Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length. 3.5.1–3.5.4. 27 indexed citations
16.
Su, Sheng‐Kai, Jin Cai, Edward Chen, Lain‐Jong Li, & H.‐S. Philip Wong. (2020). Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors. 285–287. 3 indexed citations
17.
Chung, Yun-Yan, Jia‐Min Shieh, Sheng‐Kai Su, et al.. (2019). Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology. IEEE Transactions on Electron Devices. 66(12). 5381–5386. 9 indexed citations
18.
Cheng, Chao-Ching, Yun-Yan Chung, Jyun‐Hong Chen, et al.. (2019). First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate. T244–T245. 30 indexed citations
19.
Dal, M.J.H. van, G. Vellianitis, G. Doornbos, et al.. (2018). Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs. 21.1.1–21.1.4. 36 indexed citations
20.
Su, Sheng‐Kai, Chien-Ping Lee, & O. Voskoboynikov. (2012). Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells. Physica E Low-dimensional Systems and Nanostructures. 48. 80–84. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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