Chao-Ching Cheng

2.5k citations

56 papers · 863 indexed · h-index 17

Impact in

Materials Chemistry top 10%
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 45
- Semiconductor materials and devices 33
- Ferroelectric and Negative Capacitance Devices 23
- Advancements in Semiconductor Devices and Circuit Design 17
- Advanced Memory and Neural Computing 10
Metals and Alloys 2

Co-authors: H.‐S. Philip Wong Lain‐Jong Li Sheng‐Kai Su Chih‐Piao Chuu Mingyang Li Wen‐Hao Chang Chao-Hsin Chien Albert Chin
Journals: IEEE Transactions on Electron Devices (7 papers)IEEE Electron Device Letters (6 papers)Applied Physics Letters (3 papers)ACS Nano (2 papers)Journal of The Electrochemical Society (2 papers)
Partner nations: Taiwan United States Singapore

In The Last Decade

Chao-Ching Cheng

54 papers receiving 845 citations

Peers

Countries citing papers authored by Chao-Ching Cheng

Since Specialization

Citations

This map shows the geographic impact of Chao-Ching Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chao-Ching Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chao-Ching Cheng more than expected).

Fields of papers citing papers by Chao-Ching Cheng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chao-Ching Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chao-Ching Cheng. The network helps show where Chao-Ching Cheng may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Chao-Ching Cheng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chao-Ching Cheng Line = papers co-authored together Chao-Ching Cheng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	On the Extreme Scaling of Transistors with Monolayer MOS2 Channel 昌也園田, Arturo Gonzalez-Quintela, D. Mahaveer Sathaiya, Edward Chen, Chen-Feng Hsu, W Szczepanski, Wenjie Shen, Bo-Heng Liu, 刘学义 LIU Xue-yi, Chi‐Chung Kei, Wen‐Hao Chang, Jin Cai, B. Norbutas, Chung-Cheng Wu, H.‐S. Philip Wong, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana Radu	2024	6
2	Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors IEEE Transactions on Nanotechnology ·Dan‐Dan Wei, Ekaterina Meshoulam, C. Sauvageau, Shu-Jui Chang, Megha Bhoj, Chao-Ching Cheng, Kang Hyeok Lee, J.D. Mein, Yu-Hsien Lin, Chao‐Hsin Chien	2024	2
3	A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs IEEE Transactions on Electron Devices ·م.د. عز الدين صخي خضير, D. Mahaveer Sathaiya, Arturo Gonzalez-Quintela, Edward Chen, Н.А. Еремин, 昌也園田, Chao-Ching Cheng, Iuliana Radu, Du Aobo, Chung-Cheng Wu	2024	0
4	High-performance monolayer MoS₂ nanosheet GAA transistor Nanotechnology ·황범규, Yun-Yan Chung, Цоколова Ольга Игоревна, 生美大塚, Ming‐Yang Li, Sheng‐Kai Su, 张学梦, 学斎木, Chien‐Wei Chen, Chi‐Chung Kei, N. Valls, Wen‐Hao Chang, Kaila Ratri Kusuma Dewi, Chao-Ching Cheng, Iuliana Radu, Chao-Hsin Chien	2023	11
5	Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow leakage current Applied Physics Letters ·Yudai Onoue, Shu-Jui Chang, R. L. Richards, Е.В. Беляев, Yu‐Chin Lin, Chao-Ching Cheng, Iuliana Radu, Chenming Hu, Chao‐Hsin Chien	2023	3
6	Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Sheng‐Kai Su, Edward Chen, Arturo Gonzalez-Quintela, Mengzhan Li, Gregory Pitner, Chao-Ching Cheng, 寛小澤, Jin Cai, H.‐S. Philip Wong, Iuliana Radu	2022	22
7	High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory IEEE Electron Device Letters ·Yun-Yan Chung, Chao-Ching Cheng, Susana Santos, Jeung-Hyun Lee, СИНИЦИН А.М. СИНИЦИН А.М., Zhihao Yu, Arturo Gonzalez-Quintela, José Arnaldo da Fonseca, Yudai Onoue, Hyeonggeun Ji, Adi Rusdianto, Lain‐Jong Li, Chao-Hsin Chien	2020	2
8	Energy-Efficient Monolithic 3-D SRAM Cell With BEOL MoS₂ FETs for SoC Scaling IEEE Transactions on Electron Devices ·Vita Pi‐Ho Hu, Chengwei Su, Komang Suwarsini, Ariadna I. Ramierz Polo, Chao-Ching Cheng, Ingrida Raziunaite, Arturo Gonzalez-Quintela, Jin-Fu Li, Yuguang Chen, Lain‐Jong Li	2020	16
9	Pinning-Free Edge Contact Monolayer MoS₂ FET Arturo Gonzalez-Quintela, Eduardo Valério de Barros Vil Boas, Chih‐Piao Chuu, Yun-Yan Chung, Ang‐Sheng Chou, Fabian Bischoff, Anantha Widyastama, Ming‐Yang Li, Chao-Ching Cheng, Jin Cai, Chao-Hsin Chien, Wen‐Hao Chang, H.‐S. Philip Wong, Lain‐Jong Li	2020	16
10	High On-State Current in Chemical Vapor Deposited Monolayer MoS₂ nFETs With Sn Ohmic Contacts IEEE Electron Device Letters ·Ang‐Sheng Chou, Chao-Ching Cheng, 张学梦, Po‐Hsun Ho, Eduardo Valério de Barros Vil Boas, Yu‐Chen Chang, MG Atebe, Kumao Takaoka, Danijela Gregurec, Fang‐Yu Fu, Chen-Feng Hsu, Yun-Yan Chung, Wen‐Hao Chang, Lain‐Jong Li, Chih‐I Wu	2020	51
11	Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET Yun-Yan Chung, Chao-Ching Cheng, J. PERTLÍČEK, Jeung-Hyun Lee, Eduardo Valério de Barros Vil Boas, Mihaela Lăcătuș, Arturo Gonzalez-Quintela, Yudai Onoue, Wen‐Hao Chang, Lain‐Jong Li, Chao-Hsin Chien	2020	4
12	Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS₂ Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology IEEE Transactions on Electron Devices ·Yun-Yan Chung, Jia‐Min Shieh, Sheng‐Kai Su, India Lewis‐Thompson, Ingrida Raziunaite, Lain‐Jong Li, H.‐S. Philip Wong, Wen‐Bin Jian, Chao-Hsin Chien, Derik W. Gryczak, Chao-Ching Cheng, Ming‐Yang Li, ROBIN O. MOTZ, Pascal E. Bastien, Jyun‐Hong Chen, Jose M Serradell, Kai‐Shin Li	2019	9
13	InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate Xiao Gong, Qian Zhou, Man Hon Samuel Owen, Rodríguez Gilabert C, Dian Lei, Shuhan Chen, Zai Ming Yang, Chao-Ching Cheng, You-Ru Lin, Cheng‐Hsien Wu, Chih-Hsin Ko, Yee‐Chia Yeo	2014	13
14	High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications National University of Singapore ·Leila Dabbagh, Xiao Gong, Ran Cheng, Pengfei Guo, Qian Zhou, Man Hon Samuel Owen, Cheng Guo, Lanxiang Wang, Wei Wang, Yue Yang, Yee‐Chia Yeo, Wendy Allen‐Davis, Shuhan Chen, Chao-Ching Cheng, You-Ru Lin, Cheng‐Hsien Wu, Christian Yacobus Wanne, C. Wann	2013	9
15	High Capacitance Density and Thermal Leakage Improvement by Using High-κ Al[sub 2]O[sub 3]-Doped SrTiO[sub 3] MIM Capacitors Journal of The Electrochemical Society ·Chia‐Chang Huang, Chao-Ching Cheng, Chih‐Wei Lin, Soroush Ebadian	2010	4
16	Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations IEEE Transactions on Electron Devices ·Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Punya Taluka -, 久也永井, Chi‐Chung Kei, Chien‐Nan Hsiao, Juncheng Liu, Chun‐Yen Chang	2009	5
17	Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric IEEE Transactions on Electron Devices ·Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Mohammadhasan Valadan, V. Sivaranjani, Juncheng Liu, Chi‐Chung Kei, Chien‐Nan Hsiao, Alfred G. Kauertz	2009	14
18	Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode IEEE Electron Device Letters ·Chao-Ching Cheng, Han Pan, Chaoyi Huang, C. P. Chou, Abdelrahman I. Hussain, Yongli Wang, Moon Jung Hwang, T. Arikado, S. P. McAlister, Albert Chin	2008	17
19	Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs∕GaAs quantum dots Journal of Applied Physics ·Tzer‐En Nee, Nishizawa Rion, Chao-Ching Cheng, Markus Mühlthaler	2006	12
20	Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate Microelectronic Engineering ·Chao-Ching Cheng, Chao-Hsin Chien, Ching-Wei Chen, CH Sai Lakshmi, Kurbanbaeva Miyasar Shirazadinovna, Trey Herman, Fu-Liang Yang, Chun-Yen Chang	2005	10

About Chao-Ching Cheng

Chao-Ching Cheng is a scholar working on Electrical and Electronic Engineering, Metals and Alloys, Materials Chemistry, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 56 papers that have together received 863 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Ferroelectric and Negative Capacitance Devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), 2D Materials and Applications (15 papers), Nanowire Synthesis and Applications (11 papers), Advanced Memory and Neural Computing (10 papers), Graphene research and applications (6 papers) and Semiconductor Quantum Structures and Devices (6 papers). The work is most often cited by research in Materials Chemistry (547 citations), Electrical and Electronic Engineering (625 citations), Biomedical Engineering (170 citations), Electronic, Optical and Magnetic Materials (63 citations) and Atomic and Molecular Physics, and Optics (99 citations). Chao-Ching Cheng has collaborated with scholars based in Taiwan, United States and Singapore. Frequent co-authors include H.‐S. Philip Wong, Lain‐Jong Li, Sheng‐Kai Su, Chih‐Piao Chuu, Mingyang Li, Wen‐Hao Chang, Chao-Hsin Chien, Albert Chin, Ang‐Sheng Chou and Iuliana Radu. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, ACS Nano and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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