K.R. Hofmann

1.4k total citations
64 papers, 1.0k citations indexed

About

K.R. Hofmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K.R. Hofmann has authored 64 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in K.R. Hofmann's work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and interfaces (10 papers). K.R. Hofmann is often cited by papers focused on Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and interfaces (10 papers). K.R. Hofmann collaborates with scholars based in Germany, United States and Netherlands. K.R. Hofmann's co-authors include G. Dorda, W. Weber, C. Werner, E. Bugiel, M. Kammler, M. Horn‐von Hoegen, Bernhard Müller, Tobias Wietler, Robby Peibst and Thomas Vogelsang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

K.R. Hofmann

62 papers receiving 979 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
K.R. Hofmann 931 315 253 95 40 64 1.0k
T. Kure 921 1.0× 218 0.7× 161 0.6× 146 1.5× 78 1.9× 69 1.0k
E. Augendre 1.3k 1.4× 446 1.4× 144 0.6× 286 3.0× 13 0.3× 110 1.4k
L. Forbes 1.1k 1.2× 432 1.4× 136 0.5× 90 0.9× 12 0.3× 98 1.1k
Shang-Yi Chiang 565 0.6× 307 1.0× 113 0.4× 41 0.4× 11 0.3× 31 637
Martin Lowisch 615 0.7× 534 1.7× 320 1.3× 112 1.2× 16 0.4× 27 830
L. Henry 586 0.6× 211 0.7× 76 0.3× 51 0.5× 14 0.3× 62 678
Mitsuo Okamoto 1.0k 1.1× 185 0.6× 131 0.5× 72 0.8× 57 1.4× 114 1.2k
H.N. Yu 1.0k 1.1× 126 0.4× 159 0.6× 68 0.7× 10 0.3× 28 1.0k
A. Murthy 1.5k 1.6× 204 0.6× 191 0.8× 415 4.4× 26 0.7× 13 1.6k
A. Martı́nez 821 0.9× 351 1.1× 201 0.8× 245 2.6× 17 0.4× 107 1.1k

Countries citing papers authored by K.R. Hofmann

Since Specialization
Citations

This map shows the geographic impact of K.R. Hofmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.R. Hofmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.R. Hofmann more than expected).

Fields of papers citing papers by K.R. Hofmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.R. Hofmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.R. Hofmann. The network helps show where K.R. Hofmann may publish in the future.

Co-authorship network of co-authors of K.R. Hofmann

This figure shows the co-authorship network connecting the top 25 collaborators of K.R. Hofmann. A scholar is included among the top collaborators of K.R. Hofmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.R. Hofmann. K.R. Hofmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hofmann, K.R., et al.. (2023). Lane formation of colloidal particles driven in parallel by gravity. Physical review. E. 108(3). 34607–34607. 1 indexed citations
2.
Kern, Thomas, et al.. (2013). Time-differential sense amplifier for sub-80mV bitline voltage embedded STT-MRAM in 40nm CMOS. 216–217. 53 indexed citations
3.
Islam, Suravi, et al.. (2012). Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformation. Nanotechnology. 23(30). 305202–305202. 6 indexed citations
4.
Reisinger, H., Tibor Grasser, K.R. Hofmann, Wolfgang Gustin, & Christian Schlünder. (2010). The impact of recovery on BTI reliability assessments. 12–16. 14 indexed citations
5.
Peibst, Robby, J. S. de Sousa, & K.R. Hofmann. (2010). Determination of theGe-nanocrystal/SiO2matrix interface trap density from the small signal response of charge stored in the nanocrystals. Physical Review B. 82(19). 13 indexed citations
6.
7.
Müller, Bernhard, et al.. (2004). Temperature-dependent growth mechanisms of CaF2 on Si(111). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(5). 2182–2187. 4 indexed citations
8.
Hofmann, K.R., Bernd Spangenberg, M. Luysberg, & H. Kurz. (2003). Properties of evaporated titanium thin films and their possible application in single electron devices. Thin Solid Films. 436(2). 168–174. 25 indexed citations
9.
10.
Müller, Bert, et al.. (2003). Initial stages of CaF2/Si(111) epitaxy investigated by friction force microscopy. Surface Science. 532-535. 633–638. 5 indexed citations
11.
Hofmann, K.R., Bernd Spangenberg, & H. Kurz. (2001). In situ fabrication of vertical tunnel junctions for SET devices. Microelectronic Engineering. 57-58. 851–856. 2 indexed citations
12.
Hofmann, K.R., et al.. (1998). Surfactant-grown low-doped germanium layers on silicon with high electron mobilities. Thin Solid Films. 321(1-2). 125–130. 14 indexed citations
13.
Kammler, M., et al.. (1998). Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization. Thin Solid Films. 336(1-2). 29–33. 9 indexed citations
14.
15.
Hofmann, K.R., et al.. (1993). Electron transport in strained Si layers on Si1−xGex substrates. Applied Physics Letters. 63(2). 186–188. 118 indexed citations
16.
Vogelsang, Thomas & K.R. Hofmann. (1992). Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates. IEEE Transactions on Electron Devices. 39(11). 2641–2642. 21 indexed citations
17.
Bauer, F., K.R. Hofmann, T. Stockmeier, et al.. (1991). Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results. IEEE Transactions on Electron Devices. 38(7). 1605–1611. 26 indexed citations
18.
Borchert, B., K.R. Hofmann, & G. Dorda. (1983). Positive and negative charge generation by hot carriers in n -MOSFETs. Electronics Letters. 19(18). 746–747. 21 indexed citations
19.
Hofmann, K.R., et al.. (1972). Suppression of Gunn-domain oscillations in thin GaAs diodes with dielectric surface loading. Electronics Letters. 8(5). 122–124. 4 indexed citations
20.
Hofmann, K.R.. (1969). Some aspects of Gunn oscillations in thin dielectric-loaded samples. Electronics Letters. 5(11). 227–228. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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