Indranil Chatterjee

996 citations

35 papers · 792 indexed · h-index 14

Impact in

Hardware and Architecture top 5%
- VLSI and Analog Circuit Testing
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Hardware and Architecture 13
- VLSI and Analog Circuit Testing 13
Condensed Matter Physics 7
- GaN-based semiconductor devices and materials 7

Co-authors: B. L. Bhuva Michael J. Uren Martin Kuball Serge Karboyan P. Moens Alexander Pooth Abhishek Banerjee Ronald D. Schrimpf
Journals: IEEE Transactions on Nuclear Science (12 papers)IEEE Transactions on Electron Devices (2 papers)Microelectronics Reliability (1 paper)Bristol Research (University of Bristol) (6 papers)Explore Bristol Research (3 papers)
Partner nations: United States United Kingdom Germany

In The Last Decade

Indranil Chatterjee

34 papers receiving 768 citations

Peers

Countries citing papers authored by Indranil Chatterjee

Since Specialization

Citations

This map shows the geographic impact of Indranil Chatterjee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Indranil Chatterjee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Indranil Chatterjee more than expected).

Fields of papers citing papers by Indranil Chatterjee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Indranil Chatterjee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Indranil Chatterjee. The network helps show where Indranil Chatterjee may publish in the future.

Co-authors

The 25 scholars most cited alongside Indranil Chatterjee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Indranil Chatterjee Line = papers co-authored together Indranil Chatterjee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories IEEE Transactions on Nuclear Science ·Diana Albertos Torres, Indranil Chatterjee, Timothy B. Boykin, Biswajit Ray	2025	0
2	Single-Event Upset Responses of Dual- and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET Technology E. Portillo, Jingchen Cao, B. L. Bhuva, Indranil Chatterjee, Shixi Wen, Robert Wong, L. W. Massengill	2019	3
3	Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node IEEE Transactions on Nuclear Science ·Di Fei, Нарбаев Тимур Сапарбаевич, Indranil Chatterjee, J. S. Kauppila, B. L. Bhuva, L. W. Massengill	2018	3
4	Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node IEEE Transactions on Nuclear Science ·Нарбаев Тимур Сапарбаевич, Di Fei, Xue Fan, J. S. Kauppila, Indranil Chatterjee, B. L. Bhuva, L. W. Massengill	2017	8
5	“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Michael J. Uren, Serge Karboyan, Indranil Chatterjee, Alexander Pooth, P. Moens, Abhishek Banerjee, Martin Kuball	2017	188
6	Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs Bristol Research (University of Bristol) ·Serge Karboyan, Michael J. Uren, J. M. Heghducheck, James W. Pomeroy, Indranil Chatterjee, P. Moens, E. Dahl, J Mimaya, Martin Kuball	2016	4
7	Roof top photovoltaic grid integration: Utility approach Елизавета Р. Саркисян, Indranil Chatterjee, Karthick Rajamani	2016	1
8	Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs Bristol Research (University of Bristol) ·P. Moens, Abhishek Banerjee, Michael J. Uren, Matteo Meneghini, Serge Karboyan, Indranil Chatterjee, P. Vanmeerbeek, Markus Cäsar, V Brijlal, Aqsa Sultana, Enrico Zanoni, Gaudenzio Meneghesso, Martin Kuball, M. Tack	2015	71
9	Multi-cell soft errors at the 16-nm FinFET technology node Bristol Research (University of Bristol) ·Leonardo Antonio Jimenez Garcia, B. L. Bhuva, L. W. Massengill, Dennis R. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee	2015	15
10	Floating body effects in carbon doped GaN HEMTs Bristol Research (University of Bristol) ·Martin Kuball, Michael J. Uren, Alexander Pooth, Serge Karboyan, Gentsu Uozumi, Indranil Chatterjee	2015	3
11	Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias Explore Bristol Research ·Michael J. Uren, Wenjing Yang, Indranil Chatterjee, Serge Karboyan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, P. Moens, P. Vanmeerbeek, Martin Kuball	2015	2
12	Impact of technology scaling on the combinational logic soft error rate Explore Bristol Research ·N. N. Mahatme, N. J. Gaspard, T. Assis, S. Jagannathan, Indranil Chatterjee, T. D. Loveless, B. L. Bhuva, L. W. Massengill, Shi-Jie Wen, Richard Wong	2014	35
13	Impact of Technology Scaling on SRAM Soft Error Rates IEEE Transactions on Nuclear Science ·Indranil Chatterjee, Balaji Narasimham, N. N. Mahatme, B. L. Bhuva, Robert A. Reed, Ronald D. Schrimpf, A. O. Karimu, Zhanibek Meiirkhanuly, Ivaniikii Am, Gokulanandhan	2014	69
14	Kernel-Based Circuit Partition Approach to Mitigate Combinational Logic Soft Errors IEEE Transactions on Nuclear Science ·N. N. Mahatme, N. J. Gaspard, T. Assis, Indranil Chatterjee, T. D. Loveless, B. L. Bhuva, William H. Robinson, L. W. Massengill, Shi-Jie Wen, Richard Wong	2014	7
15	Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs Indranil Chatterjee, En Xia Zhang, B. L. Bhuva, Daniel M. Fleetwood, Kristen M. Perano, A. S. Oates	2013	20
16	Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells IEEE Transactions on Nuclear Science ·Indranil Chatterjee, B. L. Bhuva, Shi-Jie Wen, Richard Wong	2012	2
17	Reliability Physics Symposium (IRPS), 2012 IEEE International Indranil Chatterjee, S. Jagannathan, (unknown), B. L. Bhuva, (unknown), (unknown)	2012	13
18	Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs Indranil Chatterjee, B. L. Bhuva, Ronald D. Schrimpf, Balaji Narasimham, William Jabez Osborne, Ivaniikii Am, 杨多, E J Klesta	2012	8
19	Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs IEEE Transactions on Nuclear Science ·Indranil Chatterjee, Balaji Narasimham, N. N. Mahatme, B. L. Bhuva, Ronald D. Schrimpf, Syed Kaliyadan, Khirupasagar Ravibaskar, 杨多, E J Klesta	2011	34
20	Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies N. N. Mahatme, Indranil Chatterjee, B. L. Bhuva, Jonathan R. Ahlbin, L. W. Massengill, Robert L. Shuler	2010	34

About Indranil Chatterjee

Indranil Chatterjee is a scholar working on Hardware and Architecture, Condensed Matter Physics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality and Computer Networks and Communications, having authored 35 papers that have together received 792 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (23 papers), Semiconductor materials and devices (21 papers), VLSI and Analog Circuit Testing (13 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), GaN-based semiconductor devices and materials (7 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Low-power high-performance VLSI design (5 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Hardware and Architecture (178 citations), Condensed Matter Physics (306 citations), Electrical and Electronic Engineering (733 citations), Electronic, Optical and Magnetic Materials (121 citations) and Safety, Risk, Reliability and Quality (15 citations). Indranil Chatterjee has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include B. L. Bhuva, Michael J. Uren, Martin Kuball, Serge Karboyan, P. Moens, Alexander Pooth, Abhishek Banerjee, Ronald D. Schrimpf, N. N. Mahatme and L. W. Massengill. Their work appears in journals such as IEEE Transactions on Nuclear Science, IEEE Transactions on Electron Devices, Microelectronics Reliability, Bristol Research (University of Bristol) and Explore Bristol Research.

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